1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
  
  
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra
high speed switching applications. This device is housed in the SOT–416/SC–90
package which is designed for low power surface mount applications, where board
space is at a premium.
Fast trr
Low CD
Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current
IFSM(1)
2.0 Adc
DEVICE MARKING
DAP222 = P9
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg 55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse V oltage Leakage Current IRVR = 70 V 0.1 µAdc
Forward Voltage VFIF = 100 mA 1.2 Vdc
Reverse Breakdown Voltage VRIR = 100 µA 80 Vdc
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz 3.5 pF
Reverse Recovery Time trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR 4.0 ns
1. t = 1 µS
2. trr Test Circuit on following page.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by DAP222/D

SEMICONDUCTOR TECHNICAL DATA

SOT–416/SC–90 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODE
SURFACE MOUNT
CASE 463–01, STYLE 4
SOT–416/SC–90
12
3
ANODE
3
12
CATHODE
Motorola, Inc. 1996
REV 1
DAP222
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4 VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
10
0VR, REVERSE VOLTAGE (VOL TS)
1.0
0.1
0.01
0.001 10 20 30 40 50
1.75
0VR, REVERSE VOLTAGE (VOL TS)
1.5
1.25
1.0
0.75
CD, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA = 150
°
C
TA = 125
°
C
TA = 85
°
C
TA = 55
°
C
TA = 25
°
C
IR, REVERSE CURRENT (
µ
A)
TA = 85
°
C
TA = –40
°
C
TA = 25
°
C
ARL
trtp
t
10%
90%
VR
tp = 2 µs
tr = 0.35 ns
IFtrr t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
DAP222
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
1.4
1
0.5 min. (3x)
0.5 min. (3x)
TYPICAL
0.5
SOLDERING PATTERN
Unit: mm
SOT–416/SC–90 POWER DISSIPATION
The power dissipation of the SOT–416/SC–90 is a function
of the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction tempera-
ture of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet, PD can be
calculated as follows.
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 125 milliwatts.
PD = 150°C – 25°C
833°C/W = 150 milliwatts
The 833°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a higher power dissipation can be achieved
using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
DAP222
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 4 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT STEP 7
COOLING
200
°
C
150
°
C
100
°
C
50
°
C
TIME (3 TO 7 MINUTES T OTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205
°
TO 219
°
C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100
°
C
150
°
C160
°
C
140
°
C
Figure 4. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES 170
°
C
DAP222
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 463–01
ISSUE A
SOT–416/SC–90
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.70 0.80 0.028 0.031
B1.40 1.80 0.055 0.071
C0.60 0.90 0.024 0.035
D0.15 0.30 0.006 0.012
G1.00 BSC 0.039 BSC
H––– 0.10 ––– 0.004
J0.10 0.25 0.004 0.010
K1.45 1.75 0.057 0.069
L0.10 0.20 0.004 0.008
S0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
–A–
–B–
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
DAP222
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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DAP222/D