P4SMA6.8A Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88367 www.vishay.com
18-Jul-02 1
Surface Mount TRANSZORB®
Transient Voltage Suppressors V(BR) Unidirectional
6.8 to 540V
V(BR) Bidirectional
6.8 to 220V
Peak Pulse Power 400W
Extended
Voltage Range*
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak power dissipation with a 10/1000µs waveform(1)(2)(Fig. 1) PPPM 400 W
Peak pulse current with a 10/1000µs waveform(1) (Fig. 3) IPPM See Next Table A
Power dissipation on infinite heatsink, TA= 50°C PM(AV) 1.0 W
Peak forward surge current 8.3ms single half sine-wave IFSM 40 A
uni-directional only(2)
Thermal resistance junction to ambient air(3) RθJA 120 °C/W
Thermal resistance junction to leads RθJL 30 °C/W
Operating junction and storage temperature range TJ, TSTG – 65 to +150 °C
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2. Rating is 300W above 91V.
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AC
(SMA)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in accordance with
IEC1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 400W peak pulse power capability with a 10/1000µs wave-
form, repetition rate (duty cycle):0.01% (300W above 91V)
• Very Fast response time
*Voltages above 220V available Q3-2002
Mechanical Data
Case: JEDEC DO-214AC molded plastic over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250°C/10 seconds at terminals.
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Mounting Position: Any Weight: 0.002oz., 0.064g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/car ton
61 – 1.8K per 7”plastic Reel (12mm tape), 36K/carton
5A – 7.5K per 13”plastic Reel (12mm tape), 75K/carton
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
P4SMA6.8A Series
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88367
218-Jul-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 25A (uni-directional only)
Breakdown Voltage Maximum Maximum Maximum Maximum
General Device Marking V(BR) at IT(1) Test Stand-off Reverse Peak Pulse Clamping Temp.
Semiconductor Code (V) Current Voltage Leakage Current Voltage at Coefficient
Part Number ITVWM at VWM IPPM(2) IPPM of V(BR)
UNI BI Min Max (mA) (V) ID(4) (µA) (A) VC(V) (% / °C)
P4SMA6.8A 6V8A 6V8C 6.45 7.14 10 5.80 1000 38.1 10.5 0.057
P4SMA7.5A 7V5A 7V5C 7.13 7.88 10 6.40 500 35.4 11.3 0.061
P4SMA8.2A 8V2A 8V2C 7.79 8.61 10 7.02 200 33.1 12.1 0.065
P4SMA9.1A 9V1A 9V1C 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068
P4SMA10A 10A 10C 9.50 10.5 1.0 8.55 10 27.6 14.5 0.073
P4SMA11A 11A 11C 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075
P4SMA12A 12A 12C 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078
P4SMA13A 13A 13C 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081
P4SMA15A 15A 15C 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084
P4SMA16A 16A 16C 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086
P4SMA18A 18A 18C 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.089
P4SMA20A 20A 20C 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090
P4SMA22A 22A 22C 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092
P4SMA24A 24A 24C 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.09
P4SMA27A 27A 27C 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096
P4SMA30A 30A 30C 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097
P4SMA33A 33A 33C 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098
P4SMA36A 36A 36C 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099
P4SMA39A 39A 39C 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100
P4SMA43A 43A 43C 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101
P4SMA47A 47A 47C 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101
P4SMA51A 51A 51C 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102
P4SMA56A 56A 56C 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103
P4SMA62A 62A 62C 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104
P4SMA68A 68A 68C 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104
P4SMA75A 75A 75C 71.3 78.8 1.0 64.1 1.0 3.9 104 0.105
P4SMA82A 82A 82C 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105
P4SMA91A 91A 91C 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106
P4SMA100A 100A 100C 95.0 105 1.0 85.5 1.0 2.2 137 0.106
P4SMA110A 110A 110C 105 116 1.0 94.0 1.0 2.0 152 0.107
P4SMA120A 120A 120C 114 126 1.0 102 1.0 1.8 165 0.107
P4SMA130A 130A 130C 124 137 1.0 111 1.0 1.7 179 0.107
P4SMA150A 150A 150C 143 158 1.0 128 1.0 1.4 207 0.106
P4SMA160A 160A 160C 152 168 1.0 136 1.0 1.4 219 0.108
P4SMA170A 170A 170C 162 179 1.0 145 1.0 1.3 234 0.108
P4SMA180A 180A 180C 171 189 1.0 154 1.0 1.2 246 0.108
P4SMA200A 200A 200C 190 210 1.0 171 1.0 1.1 274 0.108
P4SMA220A 220A 220C 209 231 1.0 185 1.0 0.9 328 0.108
P4SMA250A 250A —237 263 1.0 214 1.0 0.87 344 0.110
P4SMA300A 300A —285 315 1.0 256 1.0 0.73 414 0.110
P4SMA350A 350A —333 368 1.0 300 1.0 0.62 482 0.110
P4SMA400A 400A —380 420 1.0 342 1.0 0.55 548 0.110
P4SMA440A 440A —418 462 1.0 376 1.0 0.50 602 0.110
P4SMA480A 480A —456 504 1.0 408 1.0 0.46 658 0.110
P4SMA510A 510A —485 535 1.0 434 1.0 0.43 698 0.110
P4SMA540A 540A —513 567 1.0 459 1.0 0.41 740 0.110
Notes: (1) Pulse test: tp ≤50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with VR10 Volts and less, the IDlimit is doubled
P4SMA6.8A Series
Vishay Semiconductors
for merly General Semiconductor
Document Number 88367 www.vishay.com
18-Jul-02 3
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPPM)
Derating in Percentage, %
TA — Ambient Temperature (°C)
1 5 10 50 100
tp — Pulse Duration (sec)
Fig. 2 – Pulse Derating Curve
PPPM — Peak Pulse Power (kW)
Fig. 1 – P eak Pulse P o wer Rating Curve
0.1
1
10
100
0.1µs 1.0µs10µs
td — Pulse Width (sec.)
100µs 1.0ms 10ms
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
Transient Thermal Impedance (°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
IFSM — Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
CJ — Junction Capacitance (pF)
10
100
1,000
10,000
101 100 200
V(BR) — Breakdown Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Stand-Off
Voltage, VWM
Uni-Directional
Bi-Directional
10
50
100
200 TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Fig. 4 – Typical Junction Capacitance
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
0
50
100
150
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse W avef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value — IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t — Time (ms)
P4SMA6.8A --
P4SMA91A
P4SMA100A --
P4SMA220A
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
