ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
1 of 7
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March 2015
© Diodes Incorporated
Z
VN4525
E6
NEW PR O D U C T
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(on)
Max I
D
T
A
= +25°
°°
°C
250V 8.5Ω @ V
GS
= 10V 230mA
Description and Applications
This 250V enhancement mode N-channel MOSFET provides users
with a competitive specification. It offers efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdowns. Applications benefiting
from this device include a variety of Telecom and general high-
voltage circuits.
SOT89 and SOT223 versions are also available.
• Earth Recall and Dialing Switches
• Electronic Hook Switches
• High Voltage Power MOSFET Drivers
• Telecom Call Routers
• Solid State Relays
Features and Benefits
• High voltage
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Complementary P-channel Type ZVP4525E6
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (Approximate)
Ordering Information
(Note 4)
Part Number
Reel Size
(inch)
Tape Width
(mm)
Quantity Per Reel
ZVN4525E6TA 7 8 3,000
ZVN4525E6TC 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT26
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
C D E F G H I J K L M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View Pinout Top-view Device symbol
SOT
26
N52 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
YM
N52
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
Z
VN4525
E6
NEW PR O D U C T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage V
DSS
250 V
Gate-Source Voltage V
GS
±40 V
Continuous Drain Current V
GS
= 10V T
A
=+25°C (Note 4) I
D
230 mA
T
A
=+70°C (Note 4)
183
Pulsed Drain Current (Note 6) I
DM
1.44 A
Continuous Source Current (Body Diode)
I
S
1.1 A
Pulsed Source Current (Body Diode)
I
SM
1.44 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation at T
A
=+25°C (Note 4)
Linear Derating Factor
P
D
1.1
8.8
W
mW/°C
Junction to Ambient (Note 4) R
θ
JA
113 °C/W
Junction to Ambient (Note 5) R
θ
J
A
65 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5. For a device surface mounted on FR4 PCB measured at t
≦
5 secs.
6. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between conductors.
Thermal Characteristics
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
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VN4525
E6
NEW PR O D U C T
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
250 285 - V I
D
= 1mA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
- 35 500 νA V
DS
= 250V, V
GS
= 0V
Gate-Body Leakage I
GSS
±1 100 nA V
GS
= ±40V, V
DS
= 0V
O
N
CHARACTERISTICS
Gate-Source Threshold Voltage V
GS(th)
0.8 1.4 1.8 V I
D
= 1mA, V
DS
= V
GS
Static Drain-Source On-State Resistance (Note 7) R
DS (ON)
-
5.6 8.5 Ω
Ω
Ω
V
GS
= 10V, I
D
= 500mA
5.9 9.0 V
GS
= 4.5V, I
D
= 360mA
6.4 9.5 V
GS
= 2.4V, I
D
= 20mA
Forward Transconductance (Note 9) g
fs
0.3 0.475 - S V
DS
= 10V, I
D
= 0.3A
Diode Forward Voltage (Note 7) V
SD
0.97 V T
J
=+25°C , I
S
= 360mA, V
GS
= 0V
DYNAMIC CHARACTERIS
TICS
(Notes 8 & 9)
Input Capacitance C
iss
- 72 - pF V
DS
= 25 V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
- 11 - pF
Reverse Transfer Capacitance C
rss
- 3.6 - pF
Total Gate Charge Q
g
- 2.6 3.65 nC V
GS
= 10V, V
DS
= 25V
I
D
= 360mA(refer to test circuit)
Gate-Source Charge Q
gs
- 0.2 0.28 nC
Gate-Drain Charge Q
gd
- 0.5 0.7 nC
Reverse Recovery Time (Note 9) t
rr
- 186 260 ns T
J
=+25°C, IF=360A,
di/dt= 100A/µs
Reverse Recovery Charge (Note 9) Q
rr
- 34 48 nC
Turn-On Delay Time t
d
(on)
- 1.25 - ns V
DD
= 30V, V
GS
= 10V
I
D
= 360mA, R
G
= 50Ω
(refer to test circuit)
Turn-On Rise Time t
r
- 1.7 - ns
Turn-Off Delay Time t
d(off)
- 11.40 - ns
Turn-Off Fall Time t
f
- 3.5 - ns
Notes: 7. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
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© Diodes Incorporated
Z
VN4525
E6
NEW PR O D U C T
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT26
Dim
Min
Max
Typ
A
0.35 0.50
0.38
B
1.50 1.70
1.60
C
2.70 3.00
2.80
D
0.95
H
2.90 3.10
3.00
J
0.013
0.10
0.05
K
1.00 1.30
1.10
L
0.35 0.55
0.40
M
0.10 0.20
0.15
α
αα
α
0° 8°
All Dimensions in mm
Dimensions
Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
A
M
J
L
D
B C
H
K
X
Z
Y
C1
C2
C2
G
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
7 of 7
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March 2015
© Diodes Incorporated
Z
VN4525
E6
NEW PR O D U C T
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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