V+
OUT
GND IN-
IN+
CBYPASS
0.01 Fm
to
0.1 Fm
+2.7V to +26V
REF
Reference
Voltage
Supply Load
RSHUNT
Output
R1R3
R2R4
SC70
Package
QFN
Package
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series
CURRENT SHUNT MONITOR
Check for Samples: INA199A1,INA199B1,INA199A2,INA199B2,INA199A3,INA199B3
1FEATURES DESCRIPTION
The INA199 series of voltage output current shunt
2• WIDE COMMON-MODE RANGE: –0.3V to 26V monitors can sense drops across shunts at common-
• OFFSET VOLTAGE: ±150μV (Max) mode voltages from –0.3V to 26V, independent of the
(Enables shunt drops of 10mV full-scale) supply voltage. Three fixed gains are available:
• ACCURACY 50V/V, 100V/V, and 200V/V. The low offset of the
Zerø-Drift architecture enables current sensing with
– ±1.5% Gain Error (Max over temperature) maximum drops across the shunt as low as 10mV
– 0.5μV/°C Offset Drift (Max) full-scale.
– 10ppm/°C Gain Drift (Max) These devices operate from a single +2.7V to +26V
• CHOICE OF GAINS: power supply, drawing a maximum of 100μA of
– INA199A1/B1: 50V/V supply current. All versions are specified from –40°C
to +105°C, and offered in both SC70 and thin QFN-
– INA199A2/B2: 100V/V 10 packages.
– INA199A3/B3: 200V/V
• QUIESCENT CURRENT: 100μA (max) PRODUCT FAMILY TABLE
• PACKAGES: SC70, THIN QFN-10 PRODUCT GAIN R3AND R4R1AND R2
INA199A1/B1 50 20kΩ1MΩ
APPLICATIONS INA199A2/B2 100 10kΩ1MΩ
INA199A3/B3 200 5kΩ1MΩ
• NOTEBOOK COMPUTERS
• CELL PHONES
• TELECOM EQUIPMENT
• POWER MANAGEMENT
• BATTERY CHARGERS
• WELDING EQUIPMENT
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2009–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE INFORMATION(1)
PACKAGE
PRODUCT GAIN PACKAGE-LEAD DESIGNATOR PACKAGE MARKING
SC70-6 DCK OBG
INA199A1 50V/V Thin QFN-10 RSW NSJ
SC70-6 DCK SEB
INA199B1 50V/V Thin QFN-10 RSW SHV
SC70-6 DCK OBH
INA199A2 100V/V Thin QFN-10 RSW NTJ
SC70-6 DCK SEG
INA199B2 100V/V Thin QFN-10 RSW SHW
SC70-6 DCK OBI
INA199A3 200V/V Thin QFN-10 RSW NUJ
SC70-6 DCK SHE
INA199B3 200V/V Thin QFN-10 RSW SHX
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range, unless otherwise noted. VALUE UNIT
Supply Voltage +26 V
Differential (VIN+) – (VIN–) –26 to +26 V
Analog Inputs,
VIN+, VIN–(2) Common-mode(3) GND – 0.3 to +26 V
REF Input GND – 0.3 to (V+) + 0.3 V
Output(3) GND – 0.3 to (V+) + 0.3 V
Input Current Into All Pins(3) 5 mA
Operating Temperature –40 to +125 °C
Storage Temperature –65 to +150 °C
Junction Temperature +150 °C
Human Body Model (HBM) 4000 V
ESD Ratings: Charged-Device Model (CDM) 1000 V
(version A) Machine Model (MM) 200 V
Human Body Model (HBM) 1500 V
ESD Ratings: Charged-Device Model (CDM) 1000 V
(version B) Machine Model (MM) 100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
2Copyright © 2009–2012, Texas Instruments Incorporated
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA= –40°C to +105°C.
At TA= +25°C, VS= +5V, VIN+ = 12V, VSENSE = VIN+ – VIN–, and VREF = VS/2, unless otherwise noted.
INA199A1, INA199B1, INA199A2, INA199B2,
INA199A3, INA199B3
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
Version A –0.3 26 V
Common-Mode Input Range VCM Version B –0.1 26 V
Common-Mode Rejection CMR VIN+ = 0V to +26V, VSENSE = 0mV 100 120 dB
Offset Voltage, RTI(1) VOS VSENSE = 0mV ±5 ±150 μV
vs Temperature dVOS/dT 0.1 0.5 μV/°C
vs Power Supply PSR VS= +2.7V to +18V, VIN+ = +18V, ±0.1 μV/V
VSENSE = 0mV
Input Bias Current IBVSENSE = 0mV 28 μA
Input Offset Current IOS VSENSE = 0mV ±0.02 μA
OUTPUT
Gain G
INA199A1 50 V/V
INA199A2 100 V/V
INA199A3 200 V/V
Gain Error VSENSE = –5mV to 5mV ±0.03 ±1.5 %
vs Temperature 3 10 ppm/°C
Nonlinearity Error VSENSE = –5mV to 5mV ±0.01 %
Maximum Capacitive Load No Sustained Oscillation 1 nF
VOLTAGE OUTPUT(2) RL= 10kΩto GND
Swing to V+ Power-Supply Rail (V+) – 0.05 (V+) – 0.2 V
Swing to GND (VGND) + 0.005 (VGND) + 0.05 V
FREQUENCY RESPONSE
Bandwidth GBW CLOAD = 10pF 14 kHz
Slew Rate SR 0.4 V/μs
NOISE, RTI(1)
Voltage Noise Density 25 nV/√Hz
POWER SUPPLY
Operating Voltage Range VS+2.7 +26 V
–20°C to +85°C +2.5 +26 V
Quiescent Current IQVSENSE = 0mV 65 100 μA
Over Temperature 115 μA
TEMPERATURE RANGE
Specified Range –40 +105 °C
Operating Range –40 +125 °C
Thermal Resistance θJA
SC70 250 °C/W
Thin QFN 80 °C/W
(1) RTI = Referred-to-input.
(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 6).
Copyright © 2009–2012, Texas Instruments Incorporated 3
NC(1) V+
NC(1) IN+
IN+
IN-
IN-
REF 8
9
10
5
4
3
1 2
7 6
GND
OUT
1
2
3
6
5
4
OUT
IN-
IN+
REF
GND
V+
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
PIN CONFIGURATIONS
DCK PACKAGE
SC70-6
(TOP VIEW)
RSW PACKAGE
Thin QFN-10
(TOP VIEW)
(1) NC = no connection.
4Copyright © 2009–2012, Texas Instruments Incorporated
V+
(V+) 0.5-
(V+) 1.0-
(V+) 1.5-
(V+) 2.0-
(V+) 2.5-
(V+) 3.0-
OutputVoltageSwing(V)
GND+3.0
GND+2.5
GND+2.0
GND+1.5
GND+1.0
GND+0.5
GND
0 5 10 15 20
OutputCurrent(mA)
25 30 35 40
V =2.7V
S
to26V
V =2.7Vto26V
S
V =5Vto26V
S
V =2.7V
S
T = 40 C- °
A
T =+25 C°
A
T =+105 C°
A
Frequency(Hz)
|CMRR|(dB)
160
140
120
100
80
60
40
20
0
1 10 1M100 1k 10k 100k
V =+5V
V =1VSine
V =Shorted
V =2.5V
S
CM
DIF
REF
Frequency(Hz)
|PSRR|(dB)
160
140
120
100
80
60
40
20
0
1 10 100k
V =+5V+250mVSineDisturbance
S
V =0V
CM
V =Shorted
DIF
V =2.5V
REF
100 1k 10k
Frequency (Hz)
Gain (dB)
70
60
50
40
30
20
10
0
10-
10 100 10M1k 10k 100k 1M
V = 0V
V = 15mV Sine
CM
DIF PP
G = 50
G = 200
G = 100
Temperature( C)°
OffsetVoltage( V)m
20
15
10
5
0
5
10
15
20
-
-
-
-
-50 -25 1250 25 50 75 100
Temperature( C)°
CMRR( V/V)m
1.0
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
-
-
-
-
-
-50 -25 1250 25 50 75 100
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
TYPICAL CHARACTERISTICS
Performance measured with the INA199A3 at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
OFFSET VOLTAGE COMMON-MODE REJECTION RATIO
vs TEMPERATURE vs TEMPERATURE
Figure 1. Figure 2.
GAIN POWER-SUPPLY REJECTION RATIO
vs FREQUENCY vs FREQUENCY
Figure 3. Figure 4.
COMMON-MODE REJECTION RATIO OUTPUT VOLTAGE SWING
vs FREQUENCY vs OUTPUT CURRENT
Figure 5. Figure 6.
Copyright © 2009–2012, Texas Instruments Incorporated 5
Frequency (Hz)
Input-Referred Voltage Noise (nV/ )ÖHz
100
10
1
10 100 1k 100k10k
V = 2.5V±
S
V = 0V
REF
V , V = 0V
IN IN+-
G = 50
G = 100 G = 200
Temperature( C)°
QuiescentCurrent( A)m
70
68
66
64
62
60
-50 -25 1250 25 50 75 100
Common-Mode Voltage (V)
Input Bias Current ( A)m
30
25
20
15
10
5
0
-5
0 5 30
10 15 20 25
I , V = 2.5V
B+ REF
I , I , V = 0V
and
I , V = 2.5V
B+ B REF-
B REF-
Temperature( C)°
InputBiasCurrent( A)m
30
29
28
27
26
25
-50 -25 1250 25 50 75 100
V+
(V+) 0.25-
(V+) 0.50-
(V+) 0.75-
(V+) 1.00-
(V+) 1.25-
(V+) 1.50-
OutputVoltage(V)
GND+1.50
GND+1.25
GND+1.00
GND+0.75
GND+0.50
GND+0.25
GND
0 2 4 5 8
OutputCurrent(mA)
10 12 14 18
16
+85 C°
+25 C°
-20 C°
+85 C°
- °20 C
+25 C°
Common-ModeVoltage(V)
InputBiasCurrent( A)m
50
40
30
20
10
0
-10
0 5 3010 15 20 25
I ,I ,V =2.5V
B+ B REF-
I ,I ,V =0V
B+ B REF-
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Performance measured with the INA199A3 at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
OUTPUT VOLTAGE SWING
vs OUTPUT CURRENT INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
(VS= 2.5V) with SUPPLY VOLTAGE = +5V
Figure 7. Figure 8.
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE INPUT BIAS CURRENT
with SUPPLY VOLTAGE = 0V (Shutdown) vs TEMPERATURE
Figure 9. Figure 10.
QUIESCENT CURRENT INPUT-REFERRED VOLTAGE NOISE
vs TEMPERATURE vs FREQUENCY
Figure 11. Figure 12.
6Copyright © 2009–2012, Texas Instruments Incorporated
2V/div
Time(250ms/div)
0V
V =5V,V =12V,V =2.5V
S CM REF
NoninvertingInputOverload
Output
1V/div
Time(100 s/div)m
0V
OutputVoltage
Supply Voltage
V =5V,1kHzStepwithV =0V,V =2.5V
S DIFF REF
Common-ModeVoltage(1V/div)
OutputVoltage(40mV/div)
Time(50ms/div)
CommonVoltageStep
0V
0V
OutputVoltage
2V/div
Time(250ms/div)
0V
Output
V =5V,V =12V,V =2.5V
S CM REF
InvertingInputOverload
Referred-to-Input
VoltageNoise(200nV/div)
Time(1s/div)
V = 2.5V±
S
V =0V
CM
V =0V
DIF
V =0V
REF
OutputVoltage
(0.5V/diV)
InputVoltage
(5mV/diV)
Time(100ms/div)
2VPP OutputSignal
10mV InputSignal
PP
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
TYPICAL CHARACTERISTICS (continued)
Performance measured with the INA199A3 at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
0.1Hz to 10Hz VOLTAGE NOISE STEP RESPONSE
(Referred-to-Input) (10mVPP Input Step)
Figure 13. Figure 14.
COMMON-MODE VOLTAGE
TRANSIENT RESPONSE INVERTING DIFFERENTIAL INPUT OVERLOAD
Figure 15. Figure 16.
NONINVERTING DIFFERENTIAL INPUT OVERLOAD START-UP RESPONSE
Figure 17. Figure 18.
Copyright © 2009–2012, Texas Instruments Incorporated 7
1V/div
Time(100ms/div)
0V
V =5V,1kHzStepwithV =0V,V =2.5V
S DIFF REF
Supply Voltage
OutputVoltage
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Performance measured with the INA199A3 at TA= +25°C, VS= +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
BROWNOUT RECOVERY
Figure 19.
8Copyright © 2009–2012, Texas Instruments Incorporated
V+
OUT
GND IN-
IN+
CBYPASS
0.01 Fm
to
0.1 Fm
+2.7V to +26V
REF
Reference
Voltage
Supply Load
RSHUNT
Output
R1R3
R2
R4
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
APPLICATION INFORMATION
BASIC CONNECTIONS
Figure 20 shows the basic connections for the INA199. The input pins, IN+ and IN–, should be connected as
closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistance.
Figure 20. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high-impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
On the RSW package, two pins are provided for each input. These pins should be tied together (that is, tie IN+ to
IN+ and tie IN– to IN–).
POWER SUPPLY
The input circuitry of the INA199 can accurately measure beyond its power-supply voltage, V+. For example, the
V+ power supply can be 5V, whereas the load power-supply voltage can be as high as +26V. However, the
output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note also that the
INA199 can withstand the full –0.3V to +26V range in the input pins, regardless of whether the device has power
applied or not.
SELECTING RS
The zero-drift offset performance of the INA199 offers several benefits. Most often, the primary advantage of the
low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current
shunt monitors typically require a full-scale range of 100mV.
The INA199 series of current-shunt monitors give equivalent accuracy at a full-scale range on the order of 10mV.
This accuracy reduces shunt dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower
gain of 50 or 100 to accommodate larger shunt drops on the upper end of the scale. For instance, an INA199A1
operating on a 3.3V supply could easily handle a full-scale shunt drop of 60mV, with only 150μV of offset.
Copyright © 2009–2012, Texas Instruments Incorporated 9
RSHUNT
VREF
VOUT
V+
VCM
RS< 10kWRINT
R < 10k
SW
RINT
Load
CF
Bias
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
UNIDIRECTIONAL OPERATION
Unidirectional operation allows the INA199 to measure currents through a resistive shunt in one direction. The
most frequent case of unidirectional operation sets the output at ground by connecting the REF pin to ground. In
unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias the REF pin
to a convenient value above 50mV to get the device output swing into the linear range for zero inputs.
A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in
this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to
negative currents (inverted voltage polarity at the device input).
BIDIRECTIONAL OPERATION
Bidirectional operation allows the INA199 to measure currents through a resistive shunt in two directions. In this
case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between 0V to
V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a
voltage other than half-scale when the bidirectional current is nonsymmetrical.
The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input
conditions the output assumes the same voltage that is applied to the reference input.
INPUT FILTERING
An obvious and straightforward filtering location is at the device output. However, this location negates the
advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input
pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances.
Figure 21 shows a filter placed at the inputs pins.
Figure 21. Filter at Input Pins
The addition of external series resistance, however, creates an additional error in the measurement so the value
of these series resistors should be kept to 10Ωor less if possible to reduce impact to accuracy. The internal bias
network shown in Figure 21 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This
error results in a voltage at the device input pins that is different than the voltage developed across the shunt
resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device
operation. The amount of error these external filter resistor add to the measurement can be calculated using
Equation 2 where the gain error factor is calculated using Equation 1.
10 Copyright © 2009–2012, Texas Instruments Incorporated
Gain Error (%) = 100 (100 Gain Error Factor)- ´
1000
R + 1000
S
1000
R + 1000
S
10,000
(9 R + 10,000´S)
10,000
(9 R + 10,000´S)
20,000
(17 R + 20,000´S)
20,000
(17 R + 20,000´S)
Gain Error Factor =
(1250 ´INT
R )
(1250 S
´ ´ ´R ) + (1250 R ) + (R R )
INT S INT
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3
and R4 (or RINT as shown in Figure 21). The reduction of the shunt voltage reaching the device input pins
appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A
factor can be calculated to determine the amount of gain error that is introduced by the addition of external series
resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the
device input pins is given in Equation 1:
where:
RINT is the internal input resistor (R3 and R4), and
RSis the external series resistance. (1)
With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.
Table 1. Input Resistance
PRODUCT GAIN RINT (kΩ)
INA199A1 50 20
INA199B1 50 20
INA199A2 100 10
INA199B2 100 10
INA199A3 200 5
INA199B3 200 5
Table 2. Device Gain Error Factor
PRODUCT SIMPLIFIED GAIN ERROR FACTOR
INA199A1
INA199B1
INA199A2
INA199B2
INA199A3
INA199B3
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 2:
(2)
For example, using an INA199A2 or INA199B2 and the corresponding gain error equation from Table 2, a series
resistance of 10Ωresults in a gain error factor of 0.991. The corresponding gain error is then calculated using
Equation 2, resulting in a gain error of approximately 0.89% solely because of the external 10Ωseries resistors.
Using an INA199A1 or INA199B1 with the same 10Ωseries resistor results in a gain error factor of 0.991 and a
gain error of 0.84% again solely because of these external resistors.
Copyright © 2009–2012, Texas Instruments Incorporated 11
V+
OUT
GND IN-
IN+
PRODUCT R AND R
3 4
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
20kW
10kW
5kW
CBYPASS
Shutdown
Control
REF
Reference
Voltage
1MWR3
R2R4
Supply Load
RSHUNT
Output
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
SHUTTING DOWN THE INA199 SERIES
While the INA199 series does not have a shutdown pin, the low power consumption allows powering from the
output of a logic gate or transistor switch that can turn on and turn off the INA199 power-supply quiescent
current.
However, in current shunt monitoring applications. there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA199 in shutdown mode shown in Figure 22.
NOTE: 1MΩpaths from shunt inputs to reference and INA199 outputs.
Figure 22. Basic Circuit for Shutting Down INA199 with Grounded Reference
Note that there is typically slightly more than 1MΩimpedance (from the combination of 1MΩfeedback and 5kΩ
input resistors) from each input of the INA199 to the OUT pin and to the REF pin. The amount of current flowing
through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the
calculation of the effect of the 1MΩimpedance from the shunt to ground is straightforward. However, if the
reference or op amp is powered while the INA199 is shut down, the calculation is direct; instead of assuming
1MΩto ground, however, assume 1MΩto the reference voltage. If the reference or op amp is also shut down,
some knowledge of the reference or op amp output impedance under shutdown conditions is required. For
instance, if the reference source behaves as an open circuit when it is unpowered, little or no current flows
through the 1MΩpath.
Regarding the 1MΩpath to the output pin, the output stage of a disabled INA199 does constitute a good path to
ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed across a
1MΩresistor.
As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25μA
that flows in each of the inputs as long as the shunt common-mode voltage is 3V or higher. Below 2V common-
mode, the only current effects are the result of the 1MΩresistors.
12 Copyright © 2009–2012, Texas Instruments Incorporated
Output
Load
Supply
ADC
V+
OUT
GND IN-
IN+
CBYPASS
0.01 Fm
to
0.1 Fm
+2.7V to +26V
REF
R1R3
R2R4
RSHUNT
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
REF INPUT IMPEDANCE EFFECTS
As with any difference amplifier, the INA199 series common-mode rejection ratio is affected by any impedance
present at the REF input. This concern is not a problem when the REF pin is connected directly to most
references or power supplies. When using resistive dividers from the power supply or a reference voltage, the
REF pin should be buffered by an op amp.
In systems where the INA199 output can be sensed differentially, such as by a differential input analog-to-digital
converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can
be cancelled. Figure 23 depicts a method of taking the output from the INA199 by using the REF pin as a
reference.
Figure 23. Sensing INA199 to Cancel Effects of Impedance on the REF Input
Copyright © 2009–2012, Texas Instruments Incorporated 13
V+
OUT
GND IN-
IN+
CBYPASS
Shutdown
Control
REF
Reference
Voltage
Supply Load
RSHUNT
Output
1MW
RPROTECT
10W
RPROTECT
10W
R3
1MWR4
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
USING THE INA199 WITH COMMON-MODE TRANSIENTS ABOVE 26V
With a small amount of additional circuitry, the INA199 series can be used in circuits subject to transients higher
than 26V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes
referred to as Transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors as shown in Figure 24 as a working impedance for the zener. It is desirable to keep these
resistors as small as possible, most often around 10Ω. Larger values can be used with an effect on gain that is
discussed in the section on input filtering. Because this circuit limits only short-term transients, many applications
are satisfied with a 10Ωresistor along with conventional zener diodes of the lowest power rating that can be
found. This combination uses the least amount of board space. These diodes can be found in packages as small
as SOT-523 or SOD-523.
Figure 24. INA199 Transient Protection Using Dual Zener Diodes
14 Copyright © 2009–2012, Texas Instruments Incorporated
V+
OUT
GND IN-
IN+
CBYPASS
Shutdown
Control
REF
Reference
Voltage
Supply Load
RSHUNT
Output
1MW
RPROTECT
10W
RPROTECT
10W
R3
1MWR4
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
In the event that low-power zeners do not have sufficient transient absorption capability and a higher power
transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-to-
back diodes between the device inputs. This method is shown in Figure 25. The most space-efficient solutions
are dual series-connected diodes in a single SOT-523 or SOD-523 package. In both examples shown in
Figure 24 and Figure 25, the total board area required by the INA199 with all protective components is less than
that of an SO-8 package, and only slightly greater than that of an MSOP-8 package.
Figure 25. INA199 Transient Protection Using a Single Transzorb and Input Clamps
Copyright © 2009–2012, Texas Instruments Incorporated 15
OUT
IN+
IN-
-
+
REF
GND
V+
1MW
1MW
R3
R4
+2.7V to +26V
Reference
Voltage
Shunt
Load Supply
Output
0.01 F
to 0.1 F
m
m
MMZ1608B601C
0.01 F
to 0.1 F
m
m
Device
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
SBOS469C –MAY 2009–REVISED AUGUST 2012
www.ti.com
IMPROVING TRANSIENT ROBUSTNESS
Applications involving large input transients with excessive dV/dt above 2kV per microsecond present at the
device input pins may cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be
taken to ensure that external series input resistance does not significantly impact gain error accuracy. For
accuracy purposes, these resistances should be kept under 10Ωif possible. Ferrite beads are recommended for
this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10Ωof resistance at dc and
over 600Ωof resistance at 100MHz to 200MHz are recommended. The recommended capacitor values for this
filter are between 0.01µF and 0.1µF to ensure adequate attenuation in the high-frequency region. This protection
scheme is shown in Figure 26.
Figure 26. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B devices are now available with new ESD structures that are not
susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing
latched conditions so they do not have the same sensitivity to the transients that the version A devices have,
thus making the version B devices a better fit for these applications.
16 Copyright © 2009–2012, Texas Instruments Incorporated
INA199A1, INA199B1
INA199A2, INA199B2
INA199A3, INA199B3
www.ti.com
SBOS469C –MAY 2009–REVISED AUGUST 2012
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (February 2010) to Revision C Page
• Added INA199Bx gains to fourth Features bullet ................................................................................................................. 1
• Added INA199Bx data to Product Family Table ................................................................................................................... 1
• Added INA199Bx data to Package Information table ........................................................................................................... 2
• Added silicon version B ESD ratings data to Absolute Maximum Ratings table .................................................................. 2
• Added silicon version B data to Input, Common-Mode Input Range parameter of Electrical Characteristics table ............. 3
• Added QFN package information to Temperature Range section of Electrical Characteristics table .................................. 3
• Updated Figure 3 .................................................................................................................................................................. 5
• Updated Figure 9 .................................................................................................................................................................. 6
• Updated Figure 12 ................................................................................................................................................................ 6
• Changed last paragraph of the Selecting RSsection to cover both INA199Ax and INA199Bx versions ............................. 9
• Changed Input Filtering section .......................................................................................................................................... 10
• Added Improving Transient Robustness section ................................................................................................................ 16
Changes from Revision A (June 2009) to Revision B Page
• Deleted ordering information content from Package/Ordering table .................................................................................... 2
• Updated DCK pinout drawing ............................................................................................................................................... 4
Changes from Original (May 2009) to Revision A Page
• Added ordering number and transport media, quantity columns to Package/Ordering Information table ............................ 2
Copyright © 2009–2012, Texas Instruments Incorporated 17
PACKAGE OPTION ADDENDUM
www.ti.com 23-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
INA199A1DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199A1DCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199A1RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
INA199A1RSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
INA199A2DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199A2DCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199A2RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
INA199A2RSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
INA199A3DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199A3DCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199A3RSWR ACTIVE UQFN RSW 10 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
INA199A3RSWT ACTIVE UQFN RSW 10 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
INA199B1DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199B1DCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199B2DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199B2DCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
INA199B3DCKR ACTIVE SC70 DCK 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
PACKAGE OPTION ADDENDUM
www.ti.com 23-Aug-2012
Addendum-Page 2
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
INA199B3DCKT ACTIVE SC70 DCK 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA199A1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A1DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A1DCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA199A1DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A1RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A1RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A2DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A2DCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A2DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A2RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A2RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199A3DCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Aug-2012
Pack Materials-Page 1
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
INA199A3DCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3
INA199A3RSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199A3RSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1
INA199B1DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B1DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B2DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B2DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B3DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
INA199B3DCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA199A1DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199A1DCKR SC70 DCK 6 3000 195.0 200.0 45.0
INA199A1DCKR SC70 DCK 6 3000 202.0 201.0 28.0
INA199A1DCKT SC70 DCK 6 250 195.0 200.0 45.0
INA199A1DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199A1RSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA199A1RSWT UQFN RSW 10 250 203.0 203.0 35.0
INA199A2DCKR SC70 DCK 6 3000 195.0 200.0 45.0
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Aug-2012
Pack Materials-Page 2
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA199A2DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199A2DCKR SC70 DCK 6 3000 202.0 201.0 28.0
INA199A2DCKT SC70 DCK 6 250 202.0 201.0 28.0
INA199A2DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199A2DCKT SC70 DCK 6 250 195.0 200.0 45.0
INA199A2RSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA199A2RSWT UQFN RSW 10 250 203.0 203.0 35.0
INA199A3DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199A3DCKR SC70 DCK 6 3000 195.0 200.0 45.0
INA199A3DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199A3DCKT SC70 DCK 6 250 195.0 200.0 45.0
INA199A3RSWR UQFN RSW 10 3000 203.0 203.0 35.0
INA199A3RSWT UQFN RSW 10 250 203.0 203.0 35.0
INA199B1DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199B1DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199B2DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199B2DCKT SC70 DCK 6 250 180.0 180.0 18.0
INA199B3DCKR SC70 DCK 6 3000 180.0 180.0 18.0
INA199B3DCKT SC70 DCK 6 250 180.0 180.0 18.0
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Aug-2012
Pack Materials-Page 3
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