SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$309 Unit in mm +02 Small Package SC-59 MOD 2.8-0.3 +02 L =0. . 6-0, ow Forward Voltage VF=0.9V(Typ.) 16-01 | Fast Reverse Recovery Time trr=l.6ns(Typ.) LJ Small Total Capacitance CT=0.9(Typ.) a 3 1 5 3 i 3] Stee E ot al 2 3 Co 1 7 3 4 22 mo Ne + +1 os | 2 MAXIMUM RATINGS (Ta=25C) +1 { | s CHARACTERISTIC SYMBOL RATING UNIT _ 3 Maximum(Peak) Reverse Voltage VRM 85 V 2 Qo Reverse Voltage VR 80 Vv Maximum(Peak) Forward Current IEM 300% mA 1 Chote 5 1. ANODE 2. CATHODE Average Forward Current To 100* mA 20-4 3. ANODE 3 Oe 4 Surge Current (10ms) IFSM 2% A 4 ANODE 5. ANODE Power Dissipation P 200 mv 5 3 JEDEC _ Junction Temperature Tj 125 Cc EIAJ _ Storage Temperature Tste -55~125 C TOSHIBA 1-3H1B * Unit Rating. Total Rating=Unit Rating x1.5 Weight 0.016 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.) TYP.| MAX.| UNIT Vrq) | Ir=lmA - |0.60 - Forward Voltage VF(2) Ip=10mA - 0.72 - V VF(3) | Ir=100ma - |0.90]1.20 IrR(1 VR=30V - - O.1 Reverse Current RQ) R HA IrR(2) Vp=80V - - 0.5 Total Capacitance Cr Vp=0, f=lNHz - 3.0 pF Reverse Recovery Time trr Ip=10mA, Fig.l - 4.0 ns Marking A2 Hus 1165 1$$309 If (mA) FORWARD CURRENT TOTAL CAPACITANCE Cy (pF) Fig. Ip Ve IR Yr 10 10 10 < Ta = 100 o 75 10 107) & 50 : -2 1 B 10 a wn Ba -} = 10 2 10 [a<} 107? 1074 0.4 06 0.8 1.0 1.2 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vp (V) Cy - Vv =~ ter Ip T R 2 50 = IMHz ~ 30 Ta=25C . 3 10 2 me a 5 & gS 3 o oO [) oo sa i uw o aw 9 > 05 1 03 1 3 10 30 100-300 QO 0.3 1 3 10 30 50 REVERSE VOLTAGE VR (V) FORWARD CURRENT Ip (mA) 1 REVERSE RECOVERY TIME (tyr) TEST CIRCUIT INPUT WAVEFO RM OUTPUT WAVEFORM INPUT 0.014F DUT 0 oH OUTPUT 7 Ip=10mAy i SG 0 t a] 2 a OSCILOSCO PE FO1 Ip -6V es 2 ( Ryn= 500) in E 50ns Wr t PULSE GENERATOR fr CRoutT =500) 1166