2017 Microchip Technology Inc. DS20005872A-page 1
MCP1665
Features
• 36V, 100 m Integrated Switch
• Up to 92% Efficiency
• Higher Current Compared to the Previous
MCP166x Switchers Family
• Output Voltage Range: Up to 32V
• 3.6A Typical Peak Input Current Limit:
-I
OUT > 1 A at 5.0V VIN, 12V VOUT
-I
OUT > 700 mA at 3.3V VIN, 12V VOUT
-I
OUT > 400 mA at 4.2V VIN, 24V VOUT
• Input Voltage Range: 2.9V to 5V
• Input Undervoltage Lockout (UVLO):
- UVLO at VIN Rising: 2.9V, typical
- UVLO at VIN Falling: 2.7V, typical
• No Load Input Current: 250 µA Typically for
Pulse-Frequency Modulation (PFM), 500 µA
Typically for Pulse-Width Modulation (PWM)
• Shutdown Mode with 0.4 µA Typical Quiescent
Current
• Automatically PFM/PWM or Selected by the
MODE Pin, for High Efficiency
• 500 kHz PWM Operation with Skipping Mode
Operation Selectable by Dedicated MODE Pin
• Feedback Voltage Reference: VFB =1.2V
• Cycle-by-Cycle Current Limiting
• Internal Compensation
• Inrush Current Limiting and Internal Soft Start
• Output Overvoltage Protection (OVP) and Open-
Load Protection (OLP) for Constant Current
Configuration
• Thermal Shutdown
• Easily Configurable for Single-ended Primary-
inductor Converter (SEPIC), Cuk or Flyback
Topologies
• Available Package: 10-Lead 2x2 mm VQFN
Applications
• Three-Cell Alkaline, Lithium and NiMH/NiCd
Portable Products
• Single-Cell Li-Ion to 5V, 12V or 24V Converters
• LCD Bias Supply for Portable Applications
• Camera Phone Flash
• Flashlight
• Battery-Powered LEDs
• Lighting Applications
• Portable Medical Equipment
• Hand-Held Instruments
General Description
The MCP1665 device is a compact, high-efficiency,
fixed-frequency, nonsynchronous step-up DC-DC
converter that integrates a 36V, 100 m NMOS switch.
It provides a space-efficient high-voltage step-up
power supply solution for applications powered by
either three-cell alkaline, Ultimate Lithium, NiCd, NiMH,
one-cell Li-Ion or Li-Polymer batteries.
The integrated switch is protected by the typical 3.6A
cycle-by-cycle inductor peak current limit operation.
There is an output overvoltage protection and an open-
load protection that turn off switching so that if the
feedback resistors are accidentally disconnected, the
feedback pin is short-circuited to GND or the output is
exposed to excessive voltage.
Soft Start circuit allows the regulator to start-up without
high inrush current or output voltage overshoot from a
low-voltage input. The device features an UVLO which
avoids start-up and operation with low inputs or
discharged batteries for cell-powered applications. A
PFM switching mode (used for power saving) is
implemented and it is selectable by the dedicated
MODE pin.
For standby applications (EN = GND), the device stops
switching, enters Shutdown mode and consumes
0.4 µA of (typical) input current (feedback divider
current not included).
MCP1665 is easy to use and allows creating classic
boost, SEPIC or flyback DC-DC converters within a
small Printed Circuit Board (PCB) area. All
compensation and protection circuitry are integrated to
minimize the number of external components. Ceramic
input and output capacitors are used.
Package Types
*Includes Exposed Thermal Pad (EP); see Ta b l e 3 - 1
SGND
PGND
FB
SW
EN
1
2
3
4
9
8
7
6VIN
SWPGND
EP
0
PGND
MODE
10
5
MCP1665
2x2mm VQFN*
High-Voltage 3.6A Integrated Switch PFM/PWM Boost Regulator
MCP1665
DS20005872A-page 2 2017 Microchip Technology Inc.
Typical Applications
Best Efficiency vs. IOUT
GND
V
FB
V
OUT
24V, >350 mA
C
OUT
4x10 µF
C
IN
2x10 µF
L
10 µH
SW
383 k
20
k
EN
+
-
Li-Ion
R
TOP
R
BOT
V
IN
3.3V-4.2V
D
V
IN
MCP1665
40V 1A
MODE
C
TOP
15 pF
V
IN
GND
V
FB
V
OUT
12V 1 A
C
OUT
4x10 µF
C
IN
2x10 µF
L
SW
1
80
k
20
k
EN
+
-
Ni-Cd
ON
OFF
R
TOP
R
BOT
V
IN
3
.6V
-4.2V
D
MCP1665
MODE
U1
+
-
Ni-Cd
+
-
Ni-Cd
4.7 µH 20V 2A
PFM/PWM
PWM Only
0
10
20
30
40
50
60
70
80
90
100
0.1 1 10 100 1000
Efficiency (%)
IOUT (mA)
VOUT=12V
VIN=3.6V
PWM/PFM
PWM ONLY
VIN=5V
2017 Microchip Technology Inc. DS20005872A-page 3
MCP1665
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
EN, VIN,VFB – GND........................................................+5.5V
VSW – GND .....................................................................+36V
Power Dissipation ....................................... Internally Limited
Storage Temperature ................................... –65°C to +150°C
Ambient Temperature with Power Applied ... –40°C to +125°C
Operating Junction Temperature.................. –40°C to +150°C
ESD Protection On All Pins:
HBM................................................................. 4 kV
MM..................................................................300V
Note: Stresses above those listed under “Maxi-
mum Ratings” may cause permanent
damage to the device. This is a stress rat-
ing only and functional operation of the
device at those or any other conditions
above those indicated in the operational
sections of this specification is not
intended. Exposure to maximum rating
conditions for extended periods may
affect the device’s reliability.
TABLE 1-1: DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA= +25°C, VIN = 3.6V, IOUT =25mA, V
OUT = 12V, CIN = 22 µF, COUT =40µF, X7R ceramic, L=4.7µH.
Boldface specifications apply over the controlled TA range of –40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Voltage Range VIN 2.7 — 5 V Note 1
Undervoltage Lockout
(UVLO)
UVLOSTART 2.7 2.85 3 VV
IN rising,
IOUT = 25 mA resistive load
UVLOSTOP 2.5 2.65 2.8 VV
IN falling,
IOUT = 25 mA resistive load
Output Voltage Adjust Range VOUT VIN +1V — 32 VNote 1
Maximum Output Current IOUT — 1000 — mA 5.0V VIN, 12V VOUT
10% drop (Note 4)
— 700 — mA 3.3V VIN, 12V VOUT
10% drop (Note 4)
— 400 — mA 4.2V VIN, 24V VOUT
10% drop (Note 4)
Feedback Voltage VFB 1.164 1.2 1.236 V—
VFB Accuracy — -3 —3%—
Feedback Input Bias Current IVFB —10—nA—
No Load Input Current (PFM) IIN0 — 250 — µA Device switching, no load,
MODE = VIN (Note 2, Note 4)
Shutdown Quiescent Current IQSHDN —0.42.5 µA EN = GND,
feedback divider current not
included (Note 3)
Peak Switch Current Limit ILmax —3.6— ANote 4
NMOS Switch Leakage INLK —0.3—µAV
IN =V
SW =5V;
VEN =V
FB =GND
NMOS Switch ON Resistance RDS(ON) —0.1— VGS = 3.6V, Peak Limit = 3.6A
(Note 4)
Line Regulation |(VFB/VFB)/
VIN|
— 0.02 0.1 %/V VIN = 3V to 5V,
IOUT =150mA
Note 1: Minimum input voltage in the range of VIN (VIN ≤5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:
VINmin =V
OUT x(1–DC
MAX). (VOUT –V
IN) > 1V is required for boost applications.
2: IIN0 varies with input and output voltage and input capacitor leakage (Figure 2-8). IIN0 is measured on the
VIN pin when the device is switching (EN = VIN), at no load, with RTOP = 180 k and RBOT =20k.
3: IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP +R
BOT) disconnected from VOUT
.
4: Determined by characterization, not production tested.
MCP1665
DS20005872A-page 4 2017 Microchip Technology Inc.
Load Regulation |VFB/VFB|—0.2—%I
OUT =50mA to 600mA,
PWM only operation (Note 4)
Maximum Duty Cycle DCMAX —90—%Note 4
Switching Frequency fSW 425 500 575 kHz ±15%
EN Input Logic High VIH 70 ——% of
VIN
IOUT =1mA
EN Input Logic Low VIL ——18 % of
VIN
IOUT =1mA
EN Input Leakage Current IENLK —5—nAV
EN =5V
MODE Input Logic High — 54 ——% of
VIN
IOUT =10mA, Note 4
MODE Input Logic Low — — — 27 % of
VIN
IOUT =10mA, Note 4
MODE Input Leakage Current — — 5 — nA VMODE =5V
Soft-Start Time tSS —3.7—msT
A, EN Low-to-High,
90% of VOUT
Thermal Shutdown
Die Temperature
TSD — 150 — °C Note 4
Die Temperature Hysteresis TSDHYS —15—°CNote 4
TABLE 1-2: TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA= +25°C, VIN = 3.6V, IOUT =25mA, V
OUT = 12V, CIN =22µF, C
OUT = 40 µF, X7R ceramic, L = 4.7 µH and 10-
Lead 2x2 mm VQFN package.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Junction Temperature
Range
TJ–40 — +125 °C Steady State
Storage Temperature Range TA–65 — +150 °C —
Maximum Junction Temperature TJ— — +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 10LD-VQFN-
2x2 mm
JA —48.3 —°C/W—
TABLE 1-1: DC AND AC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA= +25°C, VIN = 3.6V, IOUT =25mA, V
OUT = 12V, CIN = 22 µF, COUT =40µF, X7R ceramic, L=4.7µH.
Boldface specifications apply over the controlled TA range of –40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Minimum input voltage in the range of VIN (VIN ≤5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:
VINmin =V
OUT x(1–DC
MAX). (VOUT –V
IN) > 1V is required for boost applications.
2: IIN0 varies with input and output voltage and input capacitor leakage (Figure 2-8). IIN0 is measured on the
VIN pin when the device is switching (EN = VIN), at no load, with RTOP = 180 k and RBOT =20k.
3: IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP +R
BOT) disconnected from VOUT
.
4: Determined by characterization, not production tested.
2017 Microchip Technology Inc. DS20005872A-page 5
MCP1665
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise specified, all limits apply for typical values at ambient temperature TA= +25°C, VIN =3.6V,
IOUT =25mA, V
OUT = 12V, CIN =22µF, C
OUT = 40 µF, X7R ceramic, L = 4.7 µH and 10-Lead 2x2 mm VQFN package.
FIGURE 2-1: Undervoltage Lockout
(UVLO) vs. Ambient Temperature.
FIGURE 2-2: VFB Voltage vs. Ambient
Temperature and VIN.
FIGURE 2-3: Maximum Output Current
vs. VIN (VOUT in Regulation with Maximum 10%
Drop).
FIGURE 2-4: 6.0V VOUT Efficiency vs.
IOUT.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (for example, outside specified power supply range) and therefore outside the warranted
range.
2.6
2.7
2.8
2.9
3
-40-25-105 203550658095110125
Input Voltage (V)
Temperature (°C)
UVLO START
UVLO STOP
UVLO START
UVLO STOP
UVLO START
UVLO STOP
UVLO START
UVLO STOP
1.184
1.186
1.188
1.19
1.192
1.194
1.196
1.198
-40 -25 -10 5 20 35 50 65 80 95 110 125
Feedback Voltage (V)
Temperature (°C)
VIN=3V
VIN=5V
VIN=3.6V
0
0.5
1
1.5
2
2.5
3
33.544.55
I
OUT
(A)
V
IN
(V)
VOUT=24V
L=10uH
VOUT=12V
L=4.7uH
VOUT=6V
L=4.7uH
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1
Efficiency (%)
IOUT (A)
VOUT=6V
VIN=3V
VIN=3.6V
PWM/PFM
PWM ONLY
VIN=4.5V
MCP1665
DS20005872A-page 6 2017 Microchip Technology Inc.
Note: Unless otherwise specified, all limits apply for typical values at ambient temperature TA= +25°C, VIN =3.6V,
IOUT =25mA, V
OUT = 12V, CIN =22µF, C
OUT = 40 µF, X7R ceramic, L = 4.7 µH and 10-Lead 2x2 mm VQFN package.
FIGURE 2-5: 12.0V VOUT Efficiency vs.
IOUT.
FIGURE 2-6: 24.0V VOUT Efficiency vs.
IOUT.
FIGURE 2-7: Inductor Peak Current Limit
vs. Input Voltage.
FIGURE 2-8: No Load Input Current, IIN0
vs. VIN (EN = VIN).
FIGURE 2-9: Shutdown Quiescent
Current, IQSHDN vs. VIN (EN = GND).
FIGURE 2-10: No Load Input Current, IIN0
vs. Ambient Temperature.
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1
Efficiency (%)
IOUT (A)
VOUT=12V
VIN=3V
VIN=3.6V
PWM/PFM
PWM ONLY
VIN=4.5V
VIN=5V
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1
Efficiency (%)
IOUT (A)
VOUT=24V
VIN=3V
VIN=3.6V
PWM/PFM
PWM ONLY
VIN=4.5V
VIN=5V
3.7
3.9
4.1
4.3
33.544.55
Inductor Peak Current Limit (A)
VIN (V)
VOUT=24V
VOUT=12V
VOUT=6V
100
200
300
400
500
600
33.544.55
No Load Input Current (µA)
Input Voltage (V)
PFM/PWM
PWM only
VOUT=12V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5
IQShutdown Current (µA)
VIN (V)
V
OUT
=12V
V
OUT
=24V
V
OUT
=6V
Note: Without FB Resistor Divider Current
0
125
250
375
500
-40 -25 -10 5 20 35 50 65 80 95 110 125
No Load Input Current (µA)
Temperature (°C)
PWM VIN=5V
PFM VIN=5V
PFM VIN=3.6V
PWM VIN=3.6V
VOUT=12V
2017 Microchip Technology Inc. DS20005872A-page 7
MCP1665
Note: Unless otherwise specified, all limits apply for typical values at ambient temperature TA= +25°C, VIN =3.6V,
IOUT =25mA, V
OUT = 12V, CIN =22µF, C
OUT = 40 µF, X7R ceramic, L = 4.7 µH and 10-Lead 2x2 mm VQFN package.
FIGURE 2-11: fSW vs. Ambient
Temperature.
FIGURE 2-12: PWM Pulse Skipping Mode
Threshold vs. VIN.
FIGURE 2-13: PFM/PWM Mode Threshold.
FIGURE 2-14: Enable Threshold vs. Input
Voltage.
FIGURE 2-15: N-Channel Switch RDSON
vs. VIN.
FIGURE 2-16: 12.0V VOUT Light Load
PWM Mode Waveforms.
425
450
475
500
525
550
575
-40 -15 10 35 60 85 110
Switching Frequency (kHz)
Temperature (°C)
VIN=3.6V
VOUT=12V
IOUT=200 mA
0
20
40
60
80
100
120
140
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5
IOUT (mA)
Input Voltage (V)
PWM Only V
OUT
=6V
V
OUT
=12V
V
OUT
=24V
0
20
40
60
80
100
120
140
3 3.25 3.5 3.75 4 4.25 4.5 4.75 5
IOUT (mA)
Input Voltage (V)
PFM/PWM
V
OUT
=12V
V
OUT
=6V
V
OUT
=24V
0
10
20
30
40
50
60
70
80
90
100
33.544.55
Enable Thresholds (% of VIN)
Input Voltage (V)
HIGH
LOW
VOUT=12V
IOUT=1mA
0
0.05
0.1
0.15
33.544.55
Switch RDSON (:)
Input Voltage (V)
IOUT =5mA
VOUT
20 mV/div
AC Coupled 20 MHz BW
VSW
5V/div
IL
200 mA/div
20 µs/div
MCP1665
DS20005872A-page 8 2017 Microchip Technology Inc.
Note: Unless otherwise specified, all limits apply for typical values at ambient temperature TA= +25°C, VIN =3.6V,
IOUT =25mA, V
OUT = 12V, CIN =22µF, C
OUT = 40 µF, X7R ceramic, L = 4.7 µH and 10-Lead 2x2 mm VQFN package.
FIGURE 2-17: 12.0V VOUT Light Load
PFM Mode Waveforms.
FIGURE 2-18: High-Load PWM Mode
Waveforms.
FIGURE 2-19: 12.0V Start-Up from Enable.
FIGURE 2-20: 12.0V Start-Up
(VIN =V
ENABLE).
FIGURE 2-21: 12.0V VOUT Load Transient
Waveforms for PWM only (MODE = GND).
FIGURE 2-22: 12.0V VOUT Load Transient
Waveforms for PFM/PWM (MODE = VIN).
IOUT =5mA
1 ms/div
VOUT
100 mV/div
AC Coupled 20 MHz BW
VSW
5V/div
IL
500 mA/div
IOUT = 300 mA
VOUT
50 mV/div
AC Coupled 20 MHz BW
VSW
5V/div
IL
500 mA/div
2 µs/div
VOUT
5V/div
VSW
5V/div
IL
500 mA/div
VEN
5V/div
1ms/div IOUT = 100 mA
400 µs/div IOUT = 100 mA
VOUT
5V/div
VSW
5V/div
VIN
2V/div
VOUT
100 mV/div
AC Coupled 20 MHz BW
IOUT
100 mA/div
IOUT
20 to 200 mA
2ms/div VIN =3.6VVIN =3.6V
2ms/div
VOUT
100 mV/div
AC Coupled 20 MHz BW
IOUT
100 mA/div
IOUT
20 to 200 mA
VIN =3.6V
2017 Microchip Technology Inc. DS20005872A-page 9
MCP1665
Note: Unless otherwise specified, all limits apply for typical values at ambient temperature TA= +25°C, VIN =3.6V,
IOUT =25mA, V
OUT = 12V, CIN =22µF, C
OUT = 40 µF, X7R ceramic, L = 4.7 µH and 10-Lead 2x2 mm VQFN package.
FIGURE 2-23: 12.0V VOUT Line Transient
Waveforms.
1ms/div
VIN
1V/div
VIN
3V to 5V
VOUT
50 mV/div
AC Coupled 20 MHz BW
IOUT = 100 mA
MCP1665
DS20005872A-page 10 2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc. DS20005872A-page 11
MCP1665
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1
.
3.1 Power Ground Pin (PGND)
The power ground pin is used as a return for the
high-current N-Channel switch. The signal ground and
power ground must be connected externally in one
point.
3.2 Signal Ground Pin (SGND)
The signal ground pin is used as a return for the
integrated reference voltage and error amplifier. The
signal ground and power ground must be connected
externally in one point.
3.3 Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. The VFB voltage is 1.2V
typical.
3.4 MODE Select Pin
This pin selects the power saving mode between PFM/
PWM (MODE = VIN) and PWM only (MODE = GND).
3.5 Power Supply Input Voltage Pin
(VIN)
Connect the input voltage source to VIN. The input
source must be decoupled with a 22 µF (minimum)
capacitor to GND.
3.6 Enable Pin (EN)
The EN pin is a logic-level input used to enable or dis-
able device switching and to lower the quiescent cur-
rent while disabled. A logic high will enable regulator’s
output. A logic low will ensure that the regulator is
disabled.
3.7 Switch Node Pin (SW)
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current, which is 3.6A
peak (typical). The integrated N-Channel switch drain
is internally connected to the SW node.
3.8 Exposed Thermal Pad (EP)
There is no internal electrical connection between the
Exposed Thermal Pad (EP) and the SGND and PGND
pins. PGND, SGND and EP must be connected
together in one low-impedance ground point. A
separate ground plane is recommended.
TABLE 3-1: PIN FUNCTION TABLE
MCP1665
10Lead 2X2 mm
VQFN
Symbol Description
1P
GND Power Ground Pin
2P
GND Power Ground Pin
3S
GND Signal Ground Pin
4V
FB Feedback Voltage Pin
5 MODE MODE select pin
MODE = GND: device is switching in PWM only
MODE = VIN: device is switching in PFM for light load
6V
IN Input Voltage Pin
7 EN Enable Control Input Pin
EN = GND: device is in shutdown
EN = VIN: device switching
8 SW Switch Node, Boost Inductor Input Pin
9 SW Switch Node, Boost Inductor Input Pin
10 PGND Power Ground Pin
0 EP Exposed Thermal Pad (EP); must be connected to Ground.
MCP1665
DS20005872A-page 12 2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc. DS20005872A-page 13
MCP1665
4.0 DETAILED DESCRIPTION
4.1 Device Overview
MCP1665 is a constant frequency PFM/PWM boost
(step-up) converter, based on a peak current mode
control architecture, which delivers high efficiency over
a wide load range, from three-cell Alkaline, Ultimate
Lithium, NiMH, NiCd and single-cell Li-Ion battery
inputs. A high level of integration lowers the total system
cost, eases implementation and reduces board area.
The device features controlled start-up voltage
(UVLO), adjustable output voltage, 500 kHz switching
frequency, PFM/PWM mode or PWM/skipping
selectable by the dedicated MODE pin, 36V integrated
switch, internal compensation, inrush current limit, soft
start and overvoltage/open load protections (in case
the VFB connection is lost).
The typical 100 m, 36V integrated switch is protected
by the 3.6A (typical) cycle-by-cycle peak inductor
current limit. When the ENABLE pin is pulled to ground
(EN = GND), the device stops switching, enters in
Shutdown mode and consumes approximately 0.4 uA
of input current (feedback current is not included).
MCP1665 can be used to design classic boost, SEPIC
or flyback DC-DC converters.
MCP1665
DS20005872A-page 14 2017 Microchip Technology Inc.
4.2 Functional Description
The MCP1665 device is a compact, high-efficiency,
fixed-frequency, step-up DC-DC converter, that
provides an easy-to-use high-output power supply
solution for applications powered by either three-cell
Alkaline or Lithium Energizer, three-cell NiCd or NiMH,
one-cell Li-Ion or Li-Polymer, or two-cell lead-acid
batteries.
Figure 4-1 depicts the functional block diagram of the
MCP1665 device. It incorporates a current-mode
control scheme, in which the PWM ramp signal is
derived from the NMOS power switch current
(VSENSE). This ramp signal adds slope ramp
compensation signal (VRAMP) and is compared to the
output of the error amplifier (VERROR) to control the
on-time of the power switch.
FIGURE 4-1: MCP1665 Simplified Block Diagram.
4.2.1 INTERNAL BIAS
The MCP1665 device gets its bias from the VIN pin. The
VIN bias is used to power the device and drive circuits
over the entire operating range. The maximum VIN is
5V. If a higher input voltage is required, the VIN pin
should be separately powered within its specified volt-
age range. An example is available in Figure 6-3. Other
examples can be found in AN2085 “Designing Applica-
tions with MCP166X High Output Voltage Boost Con-
verter Family.”
4.2.2 START-UP VOLTAGE AND SOFT
START
The MCP1665 device starts at input voltages that are
higher than or equal to a predefined set UVLO value.
MCP1665 starts switching at 2.85V (typical) for a 12V
output (25 mA load). Once started, the device will
continue to operate under normal load conditions,
down to 2.7V (typical). A soft-start feature is present
and it provides a way to limit the inrush current drawn
from the input (batteries) during start-up. The soft start
2017 Microchip Technology Inc. DS20005872A-page 15
MCP1665
has an important role in applications where the switch
voltage will reach 32V. During start-up, excessively
high switch current, together with the presence of high
voltage, can overstress the NMOS switch.
When the device is powered (EN = VIN and VIN rises
from zero to its nominal value), the output capacitor
charges to a value close to the input voltage (or VIN
minus a Schottky diode voltage drop). The overshoot
on output is limited by slowly increasing the reference
of the error amplifier. There is an internal reference
voltage circuit that charges an internal capacitor with a
weak current source. The voltage on this capacitor
slowly ramps the reference voltage. The soft-start
capacitor is completely discharged in the event of a
commanded shutdown or a thermal shutdown.
Due to the direct path from input to output, in the case
of start-up by enable (EN voltage switches from low-to-
high), the output capacitor is already charged and the
output starts from a value close to the input voltage
(Figure 2-19).
The internal oscillator has a delayed start in order to let
the output capacitor completely charge to the input
voltage value.
4.2.3 UNDERVOLTAGE LOCKOUT
(UVLO)
MCP1665 features an UVLO that prevents fault
operation below 2.7V, which corresponds to the value
of three discharged primary cells. The device starts its
normal operation at 2.85V (typical) input. The upper
limit is set to avoid any input transients (temporary VIN
drop), which might trigger the UVLOSTOP threshold and
restart the device. Usually, these voltage transients
(overshoots and undershoots) have up to a few
hundreds mV.
MCP1665 is a nonsynchronous boost regulator. Due to
this fact, there is a direct path from VIN to VOUT through
the inductor and the diode. This means that, while the
device is not switching (VIN below UVLOSTOP
threshold, when EN = GND and during thermal
shutdown), VOUT is not zero, but equal to VIN –V
F
,
(where VF is the voltage drop on the rectifying diode).
See Section 2.0 “Typical Performance Curves” for
more information.
4.2.4 PWM AND PFM MODE OPERATION
MCP1665 operates as a fixed-frequency,
nonsynchronous converter. The switching frequency is
maintained at 500 kHz with a precision oscillator.
Lossless current sensing converts the peak current
signal to a voltage (VSENSE) and adds it to the internal
slope compensation (VRAMP). This summed signal is
compared to the voltage error amplifier output (VERROR)
to provide a peak current control signal (VPWM) for the
PWM control block. The slope compensation signal
depends on the input voltage. Therefore, the converter
provides the proper amount of slope compensation to
ensure stability. The inductor peak current limit is set to
3.6A typical.
4.2.5 MODE PIN FUNCTIONALITY
1. MODE = GND
The MCP1665 device will operate in PWM mode, even
during light-load operation, by skipping pulses to keep
the output regulation. By operating in PWM mode, the
output ripple is low and the frequency is constant.
2. MODE = VIN
The MCP1665 device will operate in PFM mode at
light-load currents, resulting in a low-quiescent current
consumption. During the sleep period between two
consecutive bursts of switching cycles, MCP1665
consumes less than 30 µA (typical) from the supply, for
its internal circuitry. The switching pulse bursts
represent a small percentage of the total running cycle,
so the overall average current drawn from the battery is
reduced. The PFM mode shows higher output ripple
voltage than the PWM mode and variable PFM mode
frequency. The PFM to PWM mode threshold is a
function of the input voltage, output voltage and load
current.
4.2.6 ADJUSTABLE OUTPUT VOLTAGE
The MCP1665 output voltage is adjustable with a
resistor divider network from VIN +1V to 32V. High
value resistors are recommended to minimize power
loss and keep the efficiency high at light loads. The
device integrates a transconductance type error
amplifier and the values of the feedback resistors do
not influence the stability of the system.
4.2.7 MINIMUM INPUT VOLTAGE FOR A
SPECIFIED OUTPUT CURRENT
The maximum output current for which the device can
regulate the output voltage depends on the input and
the output voltage.
The minimum input voltage necessary to reach the
value of the desired voltage output depends on the
maximum duty cycle, in accordance with the
mathematical relationship VOUT =V
INmin/(1–D
MAX).
Note: If a high-load current is required during the
sleep time between two switching bursts
of PFM (MODE = VIN), the output voltage
drops more, compared to the PWM only
(MODE = GND), before the output recov-
ers. The reason is that during sleep mode,
most of the internal circuitry of the
switcher is turned off, in order to save
input power. When steep load changes
are expected and the output voltage ripple
has to be always low, it is recommended
to use the switcher in PWM only
MODE = GND.
MCP1665
DS20005872A-page 16 2017 Microchip Technology Inc.
As there is a typical 3.6A inductor peak current limit,
VOUT can go out of regulation before reaching the
maximum duty cycle.
For example, to ensure a 800 mA load current for
VOUT = 12.0V, a minimum of 3.6V input voltage is
necessary. If an application is powered by one Li-Ion
battery (VIN from 3.3V to 4.2V), the minimum load
current the MCP1665 device can deliver is close to
350 mA at 24.0V output (see Figure 2-3).
4.2.8 ENABLE PIN
The MCP1665 device is enabled when the EN pin is set
high. The device is set into Shutdown mode when the
EN pin is set low. To enable the boost converter, the EN
voltage level must be greater than 70% of the VIN
voltage. To disable the boost converter, the EN voltage
must be less than 18% of the VIN voltage.
In Shutdown mode, the MCP1665 device stops
switching and all internal control circuitry is switched
off. MCP1665's internal circuitry will consume in this
state 0.4 µA (typical). In boost configuration, the input
voltage will be bypassed to output through the inductor
and the Schottky diode.
4.2.9 INTERNAL COMPENSATION
The error amplifier, with its associated compensation
network, completes the closed-loop system by
comparing a fraction of the output voltage to a
reference at the input of the error amplifier and by
feeding the amplified and inverted error voltage to the
control input of the inner current loop. The
compensation network provides phase leads and lags
at appropriate frequencies to cancel excessive phase
lags and leads of the power circuit. All necessary
compensation components and slope compensation
are integrated.
4.2.10 OPEN LOAD PROTECTION (OLP)
An internal VFB fault signal turns off the PWM signal
(VEXT) and MCP1665 stops switching in the event of:
• short circuit of the feedback pin to GND
• disconnection of the feedback divider from VOUT
For a regular boost converter without any protection
implemented, if the VFB voltage drops to ground poten-
tial, its N-Channel transistor is forced to switch at full
duty cycle. As a result, VOUT rises and the SW pin’s
voltage exceeds the maximum rating and damages the
boost regulator IC, the external components and the
load. Because a lower feedback voltage can cause an
output voltage overshoot, a feedback undervoltage
comparator can be used to protect the circuit.
The MCP1665 has implemented a protection which
turns off PWM switching when the VFB pin’s voltage
drops to ground level. An additional comparator uses a
80 mV (approximate) reference, monitors the VFB volt-
age and generates an internal VFB_FAULT signal for
control logic circuits, if the voltage decreases under this
reference. Using an undervoltage feedback compara-
tor, in addition to an UVLO input circuit, it acts as a
permanently Low Battery device turning off.
The OLP comparator is disabled during the start-up
sequence and during a thermal shutdown event.
4.2.11 OVERVOLTAGE PROTECTION
(OVP)
A dedicated comparator monitors VFB and if the voltage
increases by 5% (typical) above the nominal value, the
part stops switching until the voltage on the feedback
pin drops to the nominal value. When proper feedback
voltage is detected, the switching resumes. This is
meant to protect the device against excessive output
voltage or high overshoots during load steps.
4.2.12 INPUT OVER-CURRENT LIMIT
The MCP1665 device uses a 3.6A (typical)
cycle-by-cycle inductor peak current limit to protect the
N-channel switch. There is an over-current comparator
which resets the driving latch when the peak of the
inductor current reaches the limit. In current limitation,
the output voltage starts dropping.
4.2.13 OUTPUT SHORT CIRCUIT
CONDITION
Like all nonsynchronous boost converters, MCP1665’s
inductor current will increase excessively during a
short-circuit at the converter’s output. Short circuit at
the output will cause the rectifying diode to fail and the
inductor’s temperature to rise. When the diode fails, the
SW pin becomes a high-impedance node, it remains
connected only to the inductor and the excessive
resulted ringing will damage the MCP1665 device.
4.2.14 OVERTEMPERATURE
PROTECTION
Overtemperature protection circuitry is integrated into
the MCP1665 device. This circuitry monitors the
device’s junction temperature and shuts down the
device if the junction temperature exceeds the typical
150°C threshold. If this threshold is exceeded, the
device will automatically restart when the junction tem-
perature drops by approximately 15°C. The output
open load protection (OLP) is reset during an
overtemperature condition to allow the resuming of the
operation.
2017 Microchip Technology Inc. DS20005872A-page 17
MCP1665
5.0 APPLICATION INFORMATION
5.1 Typical Applications
The MCP1665 nonsynchronous boost regulator
operates over a wide output voltage range, up to 32V.
The input voltage ranges from 2.9V to 5V. The device
operates down to 2.7V input, with limited specification.
The UVLO thresholds are set to 2.85V, when VIN is
ramping and to 2.7V, when VIN is falling. The power
efficiency conversion is high for several decades of
load range. Output current capability increases with the
input voltage and decreases with the increasing output
voltage. The maximum output current is based on an
N-channel switch peak current limit set to 3.6A, and on
a maximum duty cycle of 90%. Typical characterization
curves in this data sheet are presented to display the
typical output current capability.
5.2 Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP1665, Equation 5-1 can be used, where RTOP is
connected to VOUT
, RBOT is connected to GND and
both are connected to the VFB input pin.
EQUATION 5-1:
The values of the two resistors, RTOP and RBOT
, affect
the no load input current and quiescent current. In
Shutdown mode (EN = GND), the device consumes
0.4 μA (typical). With 400 K feedback divider for 24V
output, the current that the divider drains from the input
is 9 μA. This value is higher than the current consump-
tion of the device itself. Keeping RTOP and RBOT high
will optimize efficiency conversion at very light loads.
There are some potential issues with higher value
resistors, as in the case of small surface mount resis-
tors: environment contamination can create leakage
paths on the PCB that significantly change the divider
ratio, so it may affect the output voltage tolerance.
5.2.1 OPEN LOAD PROTECTION
The MCP1665 device features an output open-load
protection (OLP) in case RTOP is disconnected from the
VOUT line. An 80 mV (approximate) OVP reference is
compared to the VFB voltage. If the voltage on the VFB
pin drops below the reference value, the device stops
switching and prevents VOUT from rising up to a
dangerous value.
OLP is not enabled during start-up and thermal
shutdown events.
5.3 Input Capacitor Selection
The boost input current is smoothened by the boost
inductor, reducing the amount of filtering necessary at
the input. Some capacitance is recommended to
provide decoupling from the input source. Due to the
fact that MCP1665 is rated to work up to +125°C
ambient temperature, low ESR X7R ceramic capacitors
are well suited, since they have a low temperature
coefficient and are small-sized.
For limited temperature range use, at up to +85°C, an
X5R ceramic capacitor can be used. For light-load
applications, 22 µF of capacitance is sufficient at the
input.
Please note that if MCP1665’s power supply imped-
ance cannot be kept as low as needed in order to main-
tain the input voltage permanently above the UVLO
threshold, it is recommended to connect an electrolyte
or a tantalum capacitor in parallel with the ceramic
mentioned above. Otherwise, unwanted behaviors (
such as restarts, oscillation or bus-pumping) may be
noticed while under high load.
For high-power applications that have high source
impedance or long leads (wires), using a 220-470 µF
input capacitor, is recommended to sustain the high
input boost currents. Additional input capacitance can
also be added, to provide a stable input voltage during
high load step-ups.
Table 5-1 contains the recommended range for the
input capacitor value.
EXAMPLE 5-1:
VOUT = 12.0V
VFB =1.2V
RBOT =20k
RTOP = 180 k
EXAMPLE 5-2:
VOUT = 24.0V
VFB =1.2V
RBOT =20k
RTOP = 380 k (VOUT = 24.18V with a standard
value of 383 k)
RTOP RBOT
VOUT
VFB
------------- 1–
=
MCP1665
DS20005872A-page 18 2017 Microchip Technology Inc.
5.4 Output Capacitor Selection
The output capacitor helps provide a stable output
voltage during sudden load transients and reduces
the output voltage ripple. As with the input capacitor,
an X7R ceramic capacitor is recommended for this
application. Using other capacitor types (aluminum or
tantalum) with large ESR has an effect on the
converter's efficiency, maximum output power and
stability. For limited temperature range (up to 85°C),
X5R ceramic capacitors can be used. The DC rating
of the output capacitor should be greater than the
VOUT value. Generally, ceramic capacitors lose much
of their capacity when the voltage applied is close to
their maximum DC rating. Choosing a capacitor with a
safe higher DC rating or placing more capacitors in
parallel assure enough capacity to correctly filter the
output voltage.
The MCP1665 device is internally compensated, so
output capacitance range is limited. See Table 5-1 for
the recommended output capacitor range.
An output capacitance higher than 40 µF adds a
better load step response and high-frequency noise
attenuation, especially while stepping from light to
heavy load currents.
While the N-Channel switch is on, the output current
is supplied by the output capacitor COUT
. The amount
of output capacitance and equivalent series
resistance will have a significant effect on the output
voltage ripple. While COUT provides load current, a
voltage drop also appears across its internal ESR that
results in voltage ripple. A trade-off between load step
behavior and loop's dynamic response speed should
be done before increasing the COUT very much.
Peak-to-peak output ripple voltage also depends on
the equivalent series inductance (ESL) of the output
capacitor. There are ceramic capacitors with special
internal architecture that minimize the ESL. For output
voltages that require low-ripple for high-frequency
components, capacitors with low ESL (for instance,
reverse geometries) are recommended. Consult the
ceramic capacitor's manufacturer portfolio for more
information.
5.5 Inductor Selection
The MCP1665 device is designed to be used with small
surface mount inductors; the inductance value can
range from 4.7 µH to 10 µH. An inductance value of
4.7 µH is recommended for output voltages below 15V.
For higher output voltages, up to 32V, an inductance
value of 10 µH is optimum.
Several parameters are used to select the appropriate
inductor: maximum-rated current, saturation current
and copper resistance (DCR). For boost converters,
the inductor current is much higher than the output
current. The average inductor current is equal to the
input current. The inductor’s peak current is 30-40%
higher than the average. The lower the inductor DCR
is, the higher the efficiency of the converter: a common
trade-off is size versus efficiency.
TABLE 5-1: CAPACITOR VALUE RANGE
CIN COUT
Minimum 22µF 40µF
Maximum — 80 µF
TABLE 5-2: MCP1665 RECOMMENDED INDUCTORS FOR BOOST CONVERTERS
Part Number Value (µH) DCR (typ.) ISAT (A) Size WxLxH (mm)
Coilcraft
MSS1048-472 4.7 11.4 4.36 10.2x10x4.8
MSS1038-103 10 35 3.9 10.2x10x3.8
XAL5030-472ME 4.7 36 6.7 5.28x5.48x3.1
Wurth Elektronik
744778004 4.7 42 4.2 7.3x7.3x3.2
7447714047 4.7 10.4 8 10x10x5
7443340470 4.7 12.7 8 8.4x7.9x7.2
7447714100 10 23 5 10x10x5
74437368100 10 27 5.2 10x10x3.8
Various
Bourns®, Inc.
RLB0913-4r7k
4.7 20 4.3 8.5x12.5
Bourns, Inc.
SRN6045-4R7Y
4.7 37.6 4 6x4.5
Panasonic® - ECG
ELL8TP4R7NB
4.7 14 4 8x8x4.7
2017 Microchip Technology Inc. DS20005872A-page 19
MCP1665
The saturation current typically specifies a point at
which the inductance has rolled off a percentage of the
rated value. This can range from a 20% to 40%
reduction in inductance. As inductance rolls off, the
inductor ripple current increases, as does the peak
switch current. It is important to keep the inductance
from rolling off too much, causing switch current to
reach the peak limit and affecting output voltage
regulation.
5.6 Rectifying Diode Selection
Schottky diodes are used to reduce losses. The diode’s
average forward current rating must be equal or higher
than the maximum output current. The diode’s peak
repetitive forward current rating has to be equal or
higher than the inductor peak current. The diode’s
reverse breakdown voltage must be higher than the
internal switch rating voltage of 36V.
The converter’s efficiency will be improved if the
voltage drop across the diode is lower. The average
forward voltage rating is forward-current dependent,
which is equal in particular to the load current.
At high temperature operation the diode’s leakage
current can also have a significant effect on the
converter’s operational efficiency.
For high currents and high ambient temperatures, use
a diode with good thermal characteristics.
See Table 5-3 for recommended diodes.
5.7 Thermal Calculations
The MCP1665 device is available in a 10-lead
2x2 mm VQFN package. The junction temperature can
be estimated by calculating the power dissipation and
applying the package thermal resistance (JA).The
maximum continuous junction temperature rating for
the MCP1665 device is +125°C.
To quickly estimate the internal power dissipation for
the switching boost regulator, an empirical calculation
using measured efficiency can be used. Being given
the measured efficiency, the internal power dissipation
is estimated by Equation 5-2.
EQUATION 5-2:
The difference between the first term, input power, and
the second term, power delivered, is the power
dissipated when using the MCP1665 device. This is an
estimate, assuming that most of the power lost is
internal to the MCP1665 and not by CIN, COUT
, the
diode and the inductor. There is some percentage of
power lost in the boost inductor and rectifying diode,
with very little loss in the input and output capacitors.
For a more accurate estimation of the internal power
dissipation, also subtract the IINRMS2xL
DCR and
IOUT xV
F power dissipation (where IINRMS is the
average input current, LDCR is the inductor series
resistance and VF is the diode voltage drop).
5.8 PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry, and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors are placed as close as possible
to the MCP1665 device, in order to minimize the loop
area.
The feedback resistors and feedback signal should be
routed away from the switching node and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
The Exposed Thermal Pad should be soldered to ther-
mal vias going through PCB down to the ground plane,
in order to properly dissipate the heat generated inside
and to avoid thermal shutdown. PGND, SGND and EP
should be connected together in one low-impedance
ground point.
FIGURE 5-1: 10-Lead 2x2 mm VQFN
Recommended Layout.
TABLE 5-3: RECOMMENDED SCHOTTKY
DIODES
Type VOUTmax Max TA
STPS2L40 32V <85°C
DFLS2100-7 32V <125°C
VOUT IOUT
Efficiency
-------------------------------------
VOUT IOUT
–PDis
=
MCP1665
DS20005872A-page 20 2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc. DS20005872A-page 21
MCP1665
6.0 TYPICAL APPLICATION CIRCUITS
FIGURE 6-1: Three Ni-Cd Cells to 12V Boost Converter.
V
IN
GND
V
FB
V
OUT
12V 1 A
C
OUT
4x10 µF
C
IN
2x10 µF
L
SW
180 k
20 k
EN
+
-
Ni-Cd
ON
OFF
R
TOP
R
BOT
V
IN
3.6V
-4.2V
D
MCP1665
Component Value Manufacturer Part Number Comment
CIN 10 µF TDK Corporation C2012X7R1A106K125AC Capacitor, Ceramic, 10 µF, 10V,
10%, X7R, 0805
COUT 10 µF TDK Corporation C3216X7R1E106K160AE Capacitor, Ceramic, 10 µF, 25V,
10%, X7R, 1206
D — STMicroelectronics STPS2L40 Schottky Rect. 40V, 2A, SMB,
Flat
L 4.7 µH Coilcraft MSS1048-472 Inductor Power, 4.7 µH, 4.3A,
SMD
R
BOT
20 kYageo Corp RC0603FR-0720KL Resistor, Thick Film, 20K,1%,
0.1W, 0603
R
TOP
180 kYageo Corp RC0603FR-07180KL Resistor, Thick Film,180K,1%,
0.1W, 0603
U1 MCP1665 Microchip
Technology Inc.
MCP1665T-E/MRA MCP1665 HV Boost Switcher
MODE
U1
+
-
Ni-Cd
+
-
Ni-Cd
4.7 µH 20V, 2A
MCP1665
DS20005872A-page 22 2017 Microchip Technology Inc.
FIGURE 6-2: Single Li-Ion Cell to 24V Output Boost Converter.
GND
VFB
VOUT
24V, >350 mA
COUT
4x10 µF
CIN
2x10 µF
L
10 µH
SW
383 k
20 k
EN
+
-
Li-Ion
RTOP
RBOT
VIN
3.6V-4.2V
D
Component Value Manufacturer Part Number Comment
CIN 10 µF Wurth Elektronik X7R0805106K010DFCT10000 Capacitor, Ceramic, 10 µF, 10V,
10%, X7R, 0805
COUT 10 µF TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 35V,
10%, X7R, 1210
D — ON Semiconductor®MBRM140T3G Diode Schottky, 40V, 1A,
DO-216AA
L 10 µH Wurth Elektronik 7447714100 Inductor Power, 10 µH, 4.3A,
10x10 mm
RBOT 20 kYageo Corporation RC0603FR-0720KL Resistor, Thick Film, 20K, 1%,
0.1W, 0603
R
TOP
383 kPanasonic® - ECG ERJ3EKF3833V Resistor, Thick Film, 383K, 1%,
0.1W, 0603
U1 MCP1665 Microchip
Technology Inc.
MCP1665T-E/MRA MCP1665 HV Boost Switcher
VIN
MCP1665
40V 1A
MODE
U1
2017 Microchip Technology Inc. DS20005872A-page 23
MCP1665
FIGURE 6-3: MCP1665 High-Voltage Input 12V to 24V Output Boost Converter.
FIGURE 6-4: MCP1665 Single Li-Ion Cell SEPIC Converter.
FIGURE 6-5: MCP1665 Coupled-Inductors Boost Converter.
VIN
VFB
GND
SW
COUT
C1
2.2 µF
RTOP
374 K
VOUT
24V @ 1.9A
VIN
4X10 µF
L1
10 µH
12V
RBOT
20 K
VIN VOUT
GND
MIC5233-5.0
CIN
1µF
CIN
2X47 µF
1
2
CIN
220 µF
PFM
PWM
MODE
EN
MCP1665
EN
D1
VIN
VFB
GND
SW
COUT
RTOP
35 K
VOUT
3.3V @ 650 mA to 1A
VIN
4X10 µF
2.8V to 4.2V
RBOT
20 K
CIN
1µF
CIN
2X22 µF
PFM
PWM
MODE
EN
MCP1665
+
-
Li-Ion
L1B
4.7 µH
CC
2.2 µF
D1
L1A
4.7 µH
1
2
CIN
330 µF
VIN
VFB
GND
SW
COUT
RTOP
680 K
VOUT
42V @ 200 mA
4X10 µF
RBOT
20 K
CIN
1µF
CIN
2X22 µF
PFM
PWM
MODE
EN
MCP1665
L1B
10 µF
D1
L1A
10 µH
1
2
CIN
330 µF
VIN
5V
MCP1665
DS20005872A-page 24 2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc. DS20005872A-page 25
MCP1665
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
10-Lead VQFN (2x2 mm) Example
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
665C
7256
MCP1665
DS20005872A-page 26 2017 Microchip Technology Inc.
B
A
0.10 C
0.10 C
0.07 C A B
0.05 C
(DATUM B)
(DATUM A)
C
SEATING
PLANE
NOTE 1
1
2
N
2X TOP VIEW
SIDE VIEW
BOTTOM VIEW
NOTE 1
0.08 C A B
0.08 C
Microchip Technology Drawing C04-1208C Sheet 1 of 2
2X
10X
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
10-Lead Very Thin Plastic Quad Flat, No Lead Package (MRA) - 2x2 mm Body [VQFN]
With Fused Exposed Pad
D
E
10X b
e
E2
E3
D2
A
(A3)
A1
L
10X (b1)
1
2
N
2017 Microchip Technology Inc. DS20005872A-page 27
MCP1665
Microchip Technology Drawing C04-1208C Sheet 2 of 2
REF: Reference Dimension, usually without tolerance, for information purposes only.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
1.
2.
3.
Notes:
Pin 1 visual index feature may vary, but must be located within the hatched area.
Package is saw singulated
Dimensioning and tolerancing per ASME Y14.5M
10-Lead Very Thin Plastic Quad Flat, No Lead Package (MRA) - 2x2 mm Body [VQFN]
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
With Fused Exposed Pad
Number of Terminals
Overall Height
Terminal Width
Overall Width
Terminal Length
Exposed Pad Width
Terminal Thickness
Pitch
Standoff
Units
Dimension Limits
A1
A
b1
E2
A3
e
L
E
N
0.50 BSC
0.203 REF
1.20
0.30
0.80
0.00
0.18 REF
0.35
1.25
0.85
0.02
2.00 BSC
MILLIMETERS
MIN NOM
10
1.30
0.40
0.90
0.05
MAX
Overall Length
Exposed Pad Length
D
D2 0.45
2.00 BSC
0.50 0.55
Exposed Pad Width E3 1.325 1.37 1.425
Terminal Width b 0.20 0.25 0.30
MCP1665
DS20005872A-page 28 2017 Microchip Technology Inc.
RECOMMENDED LAND PATTERN
Dimension Limits
Units
C2
Center Pad Width
Contact Pad Spacing
Center Pad Length
Contact Pitch
Y2
X2
1.77
0.53
MILLIMETERS
0.50 BSC
MIN
E
MAX
2.10
Contact Pad Length (X10)
Contact Pad Width (X10)
Y1
X1
0.70
0.30
Microchip Technology Drawing C04-3208B
NOM
10-Lead Very Thin Plastic Quad Flat, No Lead Package (MRA) - 2x2 mm Body [VQFN]
C1Contact Pad Spacing 1.90
Contact Pad to Center Pad (X3) G1 0.22
Contact Pad to Center Pad (X4) G2
Contact Pad to Contact Pad (X6) G3
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Notes:
Dimensioning and tolerancing per ASME Y14.5M
For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during
reflow process
1.
2.
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
With Fused Exposed Pad
C1
C2
X1
Y1
X2
Y3
Y2
E
G1
G2
G3
C1
2
SILK SCREEN
Y3Center Pad Length 1.25
0.20
0.45
2017 Microchip Technology Inc. DS20005872A-page 29
MCP1665
APPENDIX A: REVISION HISTORY
Revision A (October 2017)
• Original Release of this Document.
MCP1665
DS20005872A-page 30 2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc. DS20005872A-page 31
MCP1665
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X/XX
PackageTemperature
Range
Device
Device: MCP1665
Tape and Reel
Option:
T = Tape and Reel(1)
Temperature
Range:
E= -40C to +125C (Extended)
Package: MRA = VQFN (Very Thin Plastic Quad Flat)
Examples:
a) MCP1665T-E/MRA = Tape and Reel, Extended
temperature, 10LD VQFN 2x2 package.
Note 1: Tape and Reel identifier only appears in the
catalog part number description. This identi-
fier is used for ordering purposes and is nto
printed on the device package. Check with
your Microchip Sales Office for package
availability with the Tape and Reel option.
[X]
(1)
Tape and Reel
Option
–
MCP1665
DS20005872A-page 32 2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc. DS20005872A-page 33
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2017, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-2269-3
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITYMANAGEMENTS
YSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
DS20005872-page 34 2017 Microchip Technology Inc.
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10/10/17
