2007-08-02
1
BCR133...
NPN Silicon Digital Transistor
• Switching in circuit, inverter, interface circuit,
drive circuit
• Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ)
• BCR133S: Two internally isolated
transistors with good matching
in one multichip package
• BCR133S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BCR133/W BCR133S
EHA07184
3
21
C
EB
R
1
R
2
EHA07174
654
321
C1 B2 E2
C2B1E1
1
R
R
2
R
1
R
2
TR1 TR2
Type Marking Pin Configuration Package
BCR133
BCR133S
BCR133W
WCs
WCs
WCs
1=B
1=E1
1=B
2=E
2=B1
2=E
3=C
3=C2
3=C
-
4=E2
-
-
5=B2
-
-
6=C1
-
SOT23
SOT363
SOT323
1Pb-containing package may be available upon special request
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2007-08-02
2
BCR133...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 40
Input reverse voltage Vi(rev) 10
Collector current IC100 mA
Total power dissipation-
BCR133, TS ≤ 102°C
BCR133S, TS ≤ 115°C
BCR133W, TS ≤ 124°C
Ptot
200
250
250
mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BCR133
BCR133S
BCR133W
RthJS
≤ 240
≤ 140
≤ 105
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
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2007-08-02
3
BCR133...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Collector-base cutoff current
VCB = 40 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEBO - - 0.75 mA
DC current gain1)
IC = 5 mA, VCE = 5 V
hFE 30 - - -
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.8 - 1.5
Input on voltage
IC = 2 mA, VCE = 0.3 V
Vi(on) 1 - 2.5
Input resistor R17 10 13 kΩ
Resistor ratio R1/R20.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 130 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
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2007-08-02
4
BCR133...
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Collector-emitter saturation voltage
VCEsat = ƒ(IC), IC/IB = 20
10 -3 10 -2 10 -1
A
IC
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
V
0.5
VCEsat
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
2
10
V
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
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2007-08-02
5
BCR133...
Total power dissipation Ptot = ƒ(TS)
BCR133
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BCR133S
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BCR133W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
BCR133
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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2007-08-02
6
BCR133...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR133
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BCR133S
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR133S
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BCR133W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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2007-08-02
7
BCR133...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR133W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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2007-08-02
8
BCR133...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
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2007-08-02
9
BCR133...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
0.9
12
3A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
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2007-08-02
10
BCR133...
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9
±0.1
A
-0.05
6x
0.1
M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
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2007-08-02
11
BCR133...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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