A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 40 V
BVCES IC = 10 mA 40 V
ICBO VCE = 24 V 10 µA
IEBO VEB = 1.5 V 0.2 µA
Ccb VCB = 24 V VEB = 1.5 V f = 1.0 MHz 2.2 pF
Cce VCB = 24 V VEB = 1.5 V f = 1.0 MHz 0.3 pF
POUT
η
ηη
ηC
GP
VCC = 24 V f = 3.0 GHz 1.3
35
8.0
W
%
dB
NPN SILICON RF POWER TRANSISTOR
PTB32001X
PACKAGE STYLE .250 2L FLG
DESCRIPTION:
The ASI PTB32001X is Designed for
Common Base Gener al pur pose
amplif ier Applications up to 4.2 GHz.
FEATURES INCLUDE:
• Diffused Emitter Ballast ing Resistor
• Hermetic Flang e Package
• Gold Metelization
MAXIMUM RATINGS
IC 250 mA
VCBO 40 V
PDISS 4.2 W @ TC = 75 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 22 °C/W
MINIMUM
inches / mm
.740 / 18.80
.128 / 3.25
.245 / 6.22
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
inches / mm
.117 / 2.97
H.560 / 14.22 .570 / 14.48
DIM
K
L
I
J
.790 / 20.07
.225 / 5.72
.003 / 0.08
.810 / 20.57
.235 / 5.97
.007 / 0.18
L
G I
J
K
H F
BE
C
ØD
A
N
MP
.060 x 45°
CHAMFER
P
N
M
.149 / 3.78
.058 / 1.47
.187 / 4.75
.068 / 1.73
.165 / 4.19 .185 / 4.70
.135 / 3.43.119 / 3.02
.125 / 3.18
