BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector Current B 1 Minimum hFE of 750 at 3 V, 3 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD645 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD647 BD649 VCBO 100 120 BD651 140 60 BD647 BD649 VCEO BD651 Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds UNIT 80 BD645 Emitter-base voltage NOTES: 1. 2. 3. 4. VALUE 80 100 V V 120 V EBO 5 V IC 8 A ICM 12 A IB 0.3 A Ptot 62.5 W Ptot 2 W 1/2LIC 2 50 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) V BE(sat) VBE(on) Collector-emitter MAX BD647 80 BD649 100 BD651 120 IC = 30 mA IB = 0 VCE = 30 V IB = 0 BD645 0.5 Collector-emitter V CE = 40 V IB = 0 BD647 0.5 cut-off current V CE = 50 V IB = 0 BD649 0.5 V CE = 60 V IB = 0 BD651 0.5 VCB = 60 V IE = 0 BD645 0.2 V CB = 80 V IE = 0 BD647 0.2 V CB = 100 V IE = 0 BD649 0.2 Collector cut-off V CB = 120 V IE = 0 BD651 0.2 current V CB = 40 V IE = 0 TC = 150C BD645 2.0 V CB = 50 V IE = 0 TC = 150C BD647 2.0 V CB = 60 V IE = 0 TC = 150C BD649 2.0 V CB = 70 V IE = 0 TC = 150C BD651 2.0 VEB = 5V IC = 0 (see Notes 5 and 6) VCE = 3V IC = 3A breakdown voltage Emitter cut-off current Forward current transfer ratio (see Note 5) TYP (see Notes 5 and 6) UNIT 60 V 5 mA mA mA 750 Collector-emitter IB = 12 mA IC = 3A saturation voltage IB = 50 mA IC = 5A IB = 50 mA IC = 5A (see Notes 5 and 6) 3 V 3V IC = 3A (see Notes 5 and 6) 2.5 V Base-emitter saturation voltage Base-emitter VCE = voltage 2 (see Notes 5 and 6) 2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER 2.0 C/W RJA Junction to free air thermal resistance 62.5 C/W PRODUCT 2 INFORMATION MIN TYP BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 10 TCS130AB 2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 1*5 1*0 TC = -40C TC = 25C TC = 100C 0*5 0*5 IC - Collector Current - A 1*0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 2*5 TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 10 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AC 1*0 0*1 BD645 BD647 BD649 BD651 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AC Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature - C Figure 5. PRODUCT 4 INFORMATION 125 150 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT 6 INFORMATION