BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
MAY 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●Designed for Complementary Use with
BD646, BD648, BD650 and BD652
●62.5 W at 25°C Case Temperature
●8 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)
BD645
BD647
BD649
BD651
VCBO
80
100
120
140
V
Collector-emitter voltage (IB = 0)
BD645
BD647
BD649
BD651
VCEO
60
80
100
120
V
Emitter-base voltageVEBO5V
Continuous collector current IC8A
Peak collector current (see Note 1)ICM12A
Continuous base current IB0.3A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot62.5W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W
Unclamped inductive load energy (see Note 4)½LIC250mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL260°C
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
2
MAY 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature(unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = 30 mAIB = 0(see Note 5)
BD645
BD647
BD649
BD651
60
80
100
120
V
ICEOCollector-emitter
cut-off current
VCE= 30 V
VCE= 40 V
VCE= 50 V
VCE= 60 V
IB=0
IB=0
IB=0
IB=0
BD645
BD647
BD649
BD651
0.5
0.5
0.5
0.5
mA
ICBOCollector cut-off
current
VCB= 60 V
VCB= 80 V
VCB= 100 V
VCB= 120 V
VCB= 40 V
VCB= 50 V
VCB= 60 V
VCB= 70 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
mA
IEBOEmitter cut-off
currentVEB = 5 VIC=0(see Notes 5 and 6)5mA
hFEForward current
transfer ratioVCE = 3 VIC= 3A(see Notes 5 and 6)750
VCE(sat)Collector-emitter
saturation voltageIB = 12 mA
IB = 50 mAIC= 3A
IC= 5A(see Notes 5 and 6)2
2.5V
VBE(sat)Base-emitter
saturation voltageIB = 50 mAIC= 5 A(see Notes 5 and 6)3V
VBE(on)Base-emitter
voltageVCE = 3 VIC= 3A(see Notes 5 and 6)2.5V
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance2.0°C/W
RθJAJunction to free air thermal resistance62.5°C/W
3
MAY 1993 - REVISED MARCH 1997
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS130AD
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0 TCS130AB
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AC
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
4
MAY 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0.01
0·1
1·0
10 SAS130AC
BD645
BD647
BD649
BD651
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS130AC
5
MAY 1993 - REVISED MARCH 1997
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
123
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
6
MAY 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited