BSD840N
OptiMOS™2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter 1) Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.88 A
TA=70 °C 0.71
Pulsed drain current ID,pulse TA=25 °C 3.5
Avalanche energy, single pulse EAS ID=0.88 A, RGS=16 Ω1.6 mJ
Reverse diode dv/dtdv/dtID=0.88 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±8 V
Power dissipation 2) Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
ESD Class JESD22-A114 -HBM 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) Remark: only one of both transistors in operation.
Value
0.5
PG-SOT-363
3
2
1
654
VDS 20 V
RDS(on),max VGS=2.5 V 400 mΩ
VGS=1.8 V 560
ID0.88 A
Product Summary
Type Package Tape and Reel Information Marking Lead Free Packing
BSD840N PG-SOT-363 H6327: 3000 pcs/ reel XBs Yes Non dry
Rev 2.3 page 1 2011-07-14
BSD840N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient RthJA minimal footprint2) - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 20 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=1.6 µA 0.3 0.55 0.75
Drain-source leakage current IDSS VDS=20 V, VGS=0 V,
Tj=25 °C --1
μA
VDS=20 V, VGS=0 V,
Tj=150 °C - - 100
Gate-source leakage current IGSS VGS=8 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=1.8 V, ID=0.19 A - 373 560 mΩ
VGS=2.5 V, ID=0.88 A - 270 400
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.71 A 2.5 - S
Values
2) Performed on 40 mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB
Rev 2.3 page 2 2011-07-14
BSD840N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -5578pF
Output capacitance Coss -2536
Reverse transfer capacitance Crss - 3.5 -
Turn-on delay time td(on) - 1.9 - ns
Rise time tr- 2.2 -
Turn-off delay time td(off) - 7.8 -
Fall time tf- 0.9 -
Gate Charge Characteristics
Gate to source charge Qgs - 0.10 - nC
Gate to drain charge Qgd - 0.10 -
Gate charge total Qg- 0.26 -
Gate plateau voltage Vplateau - 1.7 - V
Reverse Diode
Diode continous forward current IS- - 0.5 A
Diode pulse current IS,pulse - - 3.5
Diode forward voltage VSD VGS=0 V, IF=0.88 A,
Tj=25 °C - 0.94 1.1 V
Reverse recovery time trr - 5.3 - ns
Reverse recovery charge Qrr - 0.82 - nC
VR=10 V, IF=0.88 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=10 V,
f=1 MHz
VDD=10 V, VGS=2.5 V,
ID=0.88 A, RG=6 Ω
VDD=10 V, ID=0.88 A,
VGS=0 to 2.5 V
Rev 2.3 page 3 2011-07-14
BSD840N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥2.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-2 10-1 100101102
10-3
10-2
10-1
100
101
VDS [V]
ID [A]
single pulse
0.01
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
10-5
103
102
101
100
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.2
0.4
0.6
0.8
1
0 40 80 120 160
TA [°C]
ID [A]
Rev 2.3 page 4 2011-07-14
BSD840N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
1
2
3
4
5
0112233
ID [A]
gfs [S]
25 °C
150 °C
0
0.4
0.8
1.2
1.6
2
0.0 0.5 1.0 1.5 2.0 2.5
VGS [V]
ID [A]
1.2 V
1.3 V
1.4 V
1.5 V
1.6 V
1.8 V
2 V
2.5 V
0
0.4
0.8
1.2
1.6
2
0 0.2 0.4 0.6 0.8 1
VDS [V]
ID [A]
1.3 V
1.4 V
1.5 V 1.6 V
1.8 V
2 V
2.5 V
0
100
200
300
400
500
600
700
800
900
0 0.2 0.4 0.6 0.8 1
ID [A]
RDS(on) [mΩ]
Rev 2.3 page 5 2011-07-14
BSD840N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.88 A; VGS=2.5 V VGS(th)=f(Tj); VDS=VGS; ID=1.6 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
100
200
300
400
500
600
700
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
typ
98 %
2 %
-0.4
0
0.4
0.8
1.2
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
100
101
102
0 5 10 15 20
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
101
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6
VSD [V]
IF [A]
Rev 2.3 page 6 2011-07-14
BSD840N
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=16 ΩVGS=f(Qgate); ID=0.88 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140
Tj [°C]
VBR(DSS) [V]
4 V
10 V
16 V
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5
Qgate [nC]
VGS [V]
25 °C
100 °C
125 °C
104
103
102
101
100
100
10-1
10-2
tAV [µs]
IAV [A]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
Rev 2.3 page 7 2011-07-14
BSD840N
SOT-363
Package Outline:
Footprint: Packing:
Reflow soldering:
Dimensions in mm
Rev 2.3 page 8 2011-07-14
BSD840N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
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Rev 2.3 page 9 2011-07-14
