Symbol
Maximum
Units
Parameter
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -40V
ID= -40A (VGS = -10V)
RDS(ON) < 15mΩ(VGS = -10V)
RDS(ON) < 20mΩ(VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
General Description
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
-RoHS Compliant
-Halogen Free*
G
D
S
G
TO-251A
IPAK
Top View
S
Bottom View
D S
G
D
D
D
TO252
DPAK
Bottom View
G
S
D
G
S
D
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
15 20
41 50
RθJC 2 2.4 °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A,G
t ≤ 10s RθJA °C/W
Steady-State
TA=25°C PDSM
TC=25°C
Maximum Junction-to-Ambient
A,G
Steady-State
Power Dissipation A
Junction and Storage Temperature Range
Maximum Junction-to-Case D,F
TC=100°C PD
-115
-42
88
°C/W
Drain-Source Voltage V±20Gate-Source Voltage
TA=70°C
Power Dissipation B
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
A
mJ
ID
Pulsed Drain Current
C
-40
-31
Continuous Drain
Current B,H
Maximum
Units
Parameter
TC=25°C
TC=100°C
-40 V
°C
62.5
31
-55 to 175
W
2.5
1.6
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4185/AOI4185
Symbol Min Typ Max Units
BV
DSS
-40 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-1.7 -1.9 -3 V
I
D(ON)
-115 A
12.5 15
T
J
=125°C 19 23
16 20
g
FS
50 S
V
SD
-0.72 -1 V
I
S
-20 A
C
iss
2550 pF
C
oss
280 pF
C
rss
190 pF
R
g
2.5 4 6 Ω
Q
g
(-10V) 42 55 nC
Q
g
(-4.5V) 18.6
Q
gs
7 nC
Q
gd
8.6 nC
t
D(on)
9.4
ns
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250µA
On state drain current V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
Reverse Transfer Capacitance
Output Capacitance
DYNAMIC PARAMETERS
I
DSS
µA
Drain-Source Breakdown Voltage I
D
=-250µA, V
GS
=0V
V
DS
=-40V, V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
mΩ
Gate Drain Charge
V
GS
=0V, V
DS
=-20V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, I
D
=-15A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-20A
Turn-On DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-20V,
I
D
=-20A
Total Gate Charge
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
t
D(on)
9.4
ns
t
r
20 ns
t
D(off)
55 ns
t
f
30 ns
t
rr
38 49 ns
Q
rr
47 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=-20A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime V
GS
=-10V, V
DS
=-20V, R
L
=1Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
TBD
TBD
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/µs
A: The value of RθJA is measured with the device in a still air environment with T A=25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
0 1 2 3 4 5
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-3.5V
-4.0V
-10V
-
6.0V
-4.5V
`
0
20
40
60
80
100
1.5 2 2.5 3 3.5 4 4.5 5
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
10
12
14
16
18
20
22
24
0
10
20
30
40
50
60
RDS(ON) (mΩ
Ω
Ω
Ω)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-
50
-
25
0
25
50
75
100
125
150
175
200
Normalized On-Resistance
VGS=-10V
ID=-20A
VGS=-4.5V
ID=-15A
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
25°
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
150
mJ
10 0 10 20 30 40 50 60
-ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25
°
C
125
°
C
0.6 -50 -25 0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
10
15
20
25
30
35
40
45
3 4 5 6 7 8 9 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=-20A
25
°
C
125
°
C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25 30 35 40
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
10
100
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
Power (W)
Coss
C
rss
0.1
1
10
100
1000
0.1
1
10
100
-ID(Amps)
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
T
C
=25°C
10
µ
s
100
µ
s
VDS=-20V
ID=-20A
TJ(Max)=175°
C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
150
mJ
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Zθ
θ
θ
θJc Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1 0.1 1 10 100
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
J(Max)
T
C
=25°C
Single Pulse
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0 25 50 75 100 125 150 175
-Current rating ID (A)
TCASE (°
°°
°C)
Figure 13: Current De-rating (Note B)
1
10
100
1000
10000
Power (W)
TJ(Max)=150°
C
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 12: Power De-rating (Note B)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
150
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Single Pulse T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4185/AOI4185
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
2
E = 1/2 LI
AR
AR
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs -
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
Alpha & Omega Semiconductor, Ltd. www.aosmd.com