PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 RDS(on) 260 m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C 15 A IDM TC = 25 C, pulse width limited by TJM 78 A IAR TC = 25 C 26 A EAR TC = 25 C 40 mJ EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 10 V/ns PD TC = 25 C 130 W -55 ... +150 150 -55 ... +150 C C C 300 C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1, leads-to-tab FC Mounting Force 2500 V~ 11..65/2.5..15 N/lb 2 g Weight ISOPLUS220TM (IXTC) E153432 G BVDSS VGS = 0 V, ID = 250 A 500 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 13A Pulse test, t 300 s, duty cycle d 2 % (c) 2006 IXYS All rights reserved TJ = 125 C V 5.5 V 100 nA 25 250 A A 260 m Isolated Tab D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) Applications DC-DC converters l l Battery chargers l Switched-mode and resonant-mode power supplies DC choppers l Characteristic Values Min. Typ. Max. S G = Gate S = Source l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) D AC motor control Advantages Easy assembly l l Space savings l High power density DS99227E(10/05 ) IXTC 26N50P Symbol gfs Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = 13A, pulse test 20 Ciss Coss 28 S 3600 pF 380 pF 48 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 13A 25 ns td(off) RG = 4 (External) 58 ns tf 20 ns Qg(on) 65 nC 20 nC 20 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 13A Qgd RthJC 0.95 C/W RthCS C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 15 A ISM Repetitive 78 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/s VR = 100 V, VGS = 0 V QRM ISOPLUS220 Outline 400 ns 5.0 C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTC 26N50P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 60 26 V GS = 10V 8V 7V 24 22 50 20 45 I D - Amperes 18 I D - Amperes V GS = 10V 8V 55 16 14 12 6V 10 7V 40 35 30 25 20 8 6 15 4 10 2 6V 5 5V 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 26 18 21 24 27 30 3.1 V GS = 10V 7V 24 22 V GS = 10V 2.8 2.5 18 R DS(on) - Normalized 20 I D - Amperes 15 Fig. 4. R DS(on) Normalized to ID = 13A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125C 6V 16 14 12 10 8 6 5V 2.2 I D = 26A 1.9 1.6 I D = 13A 1.3 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 13A Value v s. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 3.2 16 3 V GS = 10V 14 TJ = 125C 2.8 2.6 12 2.4 I D - Amperes R DS(on) - Normalized 12 V DS - Volts V DS - Volts 2.2 2 1.8 1.6 1.4 10 8 6 4 TJ = 25C 1.2 2 1 0.8 0 0 5 10 15 20 25 30 35 I D - Amperes (c) 2006 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXTC 26N50P Fig. 8. Transconductance 50 45 45 40 40 35 35 30 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 50 TJ = 125C 25C - 40C 25 20 TJ = - 40C 25C 125C 30 25 20 15 15 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 V GS - Volts 25 30 35 40 45 50 55 60 60 65 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 V DS = 250V 9 70 I D = 13A 8 I G = 10mA 60 I S - Amperes 7 V GS - Volts 50 40 30 TJ = 125C 6 5 4 3 20 2 10 TJ = 25C 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 V SD - Volts 20 25 30 35 40 45 50 55 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 f = 1 MHz Capacitance - PicoFarads RDS(on) Limit C iss 25s I D - Amperes 1,000 C oss 100s 1ms 10 100 10ms TJ = 150C C rss TC = 25C 10 DC 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXTC 26N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - C / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved IXYS REF: T_26N50P (6J) 12-06-05-A