© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C15A
IDM TC= 25°C, pulse width limited by TJM 78 A
IAR TC= 25°C26A
EAR TC= 25°C40mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 130 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, t = 1, leads-to-tab 2500 V~
FCMounting Force 11..65/2.5..15 N/lb
Weight 2g
G = Gate D = Drain
S = Source
DS99227E(10/05 )
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 250µA 3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 13A 260 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHVTM
Power MOSFET
ISOPLUS220TM
VDSS = 500 V
ID25 =15 A
RDS(on) ≤≤
≤≤
≤260 mΩΩ
ΩΩ
Ω
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
ISOPLUS220TM (IXTC)
E153432
G
DSIsolated Tab
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<30pF)
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly
lSpace savings
lHigh power density
IXTC 26N50P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC 26N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 13A, pulse test 20 28 S
Ciss 3600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 380 pF
Crss 48 pF
td(on) 20 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 13A 25 ns
td(off) RG = 4 Ω (External) 58 ns
tf20 ns
Qg(on) 65 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 13A 20 nC
Qgd 20 nC
RthJC 0.95°C/W
RthCS 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 15 A
ISM Repetitive 78 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A 400 ns
-di/dt = 100 A/µs
QRM VR = 100 V, VGS = 0 V 5.0 µC
ISOPLUS220 Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
IXTC 26N50P
Fig. 1. Output Characteristics
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
22
24
26
01234567
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
60
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 13A Value
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
VGS
= 10V
I D = 26A
I D = 13A
Fig. 5. R
DS(on)
Normalized to I
D
= 13A Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
R
DS(on)
- Normalized
VGS
= 10V
TJ = 125ºC
TJ = 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC 26N50P
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
3.544.555.566.57
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.40.50.60.70.80.9 1 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55 60 65
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
© 2006 IXYS All rights reserved
IXTC 26N50P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W
IXYS REF: T_26N50P (6J) 12-06-05-A
