© 2009 IXYS CORPORATION, All Rights Reserved DS100194(9/09)
IXFH340N075T2
IXFT340N075T2
TrenchT2TM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C75 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ75 V
VGSM Transient ± 20 V
ID25 TC= 25°C (Chip Capability) 340 A
ILRMS Lead Current Limit, RMS 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 850 A
IATC= 25°C 170 A
EAS TC= 25°C 960 mJ
PDTC= 25°C 935 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 75 V
VGS(th) VDS = VGS, ID = 3mA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS= 0V 25 μA
TJ = 150°C 1.5 mA
RDS(on) VGS = 10V, ID = 100A, Note 1 3.2 mΩ
VDSS = 75V
ID25 = 340A
RDS(on) ≤≤
≤≤
≤ 3.2mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
z175°C Operating Temperature
zHigh Current Handling Capability
zAvalanche Rated
z Fast Intrinsic Diode
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC/DC Converters and Off-line UPS
zPrimary- Side Switch
zHigh Current Switching Applications
Advance Technical Information
G = Gate D = Drain
S = Source TAB = Drain
TO-247 (IXFH)
TO-268 (IXFT)
G
SD (TAB)
S
G
D (TAB)
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH340N075T2
IXFT340N075T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 65 110 S
Ciss 19 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2230 pF
Crss 490 pF
RGi Gate Input Resistance 1.7 Ω
td(on) 26 ns
tr 50 ns
td(off) 60 ns
tf 35 ns
Qg(on) 300 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 68 nC
Qgd 70 nC
RthJC 0.16 °C/W
RthCH TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 340 A
ISM Repetitive, Pulse Width Limited by TJM 1360 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 75 ns
IRM 4.4 A
QRM 165 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
IF = 170A, VGS = 0V
-di/dt = 100A/μs
VR = 37.5V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
∅ P
TO-247 (IXFH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXFT) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
© 2009 IXYS CORPORATION, All Rights Reserved
IXFH340N075T2
IXFT340N075T2
Fi g . 1. Ou tpu t C h ar acter i stics
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7V
4V
5V
6V
Fi g. 3. Ou tpu t Ch aracter i stics
@ T
J
= 150ºC
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7
V
5
V
6
V
4
V
Fig. 4. R
DS(on)
Normalized t o I
D
= 170A Value vs.
Junction T emperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 340A
I
D
= 170A
Fig. 5. R
DS(on)
No r mali z ed to I
D
= 170A Value vs.
Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 40 80 120 160 200 240 280 320 360
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - - -
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. Dr ai n C u rr en t vs. C ase Temper atu r e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
400
0.00.51.01.52.02.53.03.54.04.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V 7V
4V
5V
6V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH340N075T2
IXFT340N075T2
IXYS REF: F_340N075T2(V8)9-15-09
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transcond uctance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s - Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
In tri nsi c Di od e
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Char ge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 37.5V
I
D
= 170A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe Op er ati n g Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
DC
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
External Lead Current Limit
100ms
© 2009 IXYS CORPORATION, All Rights Reserved
IXFH340N075T2
IXFT340N075T2
Fi g. 14. R esisti v e Turn -o n
Ri se Time vs. D r ai n C u r r en t
40
45
50
55
60
65
70
100 110 120 130 140 150 160 170 180 190 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 37.5V
Fig . 15. R esistive Tu r n -on
Switchin g Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
123456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
10
20
30
40
50
60
70
80
90
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC , V
GS
= 10V
V
DS
= 37.5V
I
D
= 100A
I
D
= 200A
Fig . 16. R e si st ive Tu rn - o f f
Switc hin g Ti mes vs. Jun cti o n Temp era tu r e
10
15
20
25
30
35
40
45
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1 , V
GS
= 10V
V
DS
= 37.5V
I
D
= 100A, 200A
Fig . 17. R esistive Tur n-o ff
Switch in g Ti mes vs. D r ai n C u r r e n t
20
24
28
32
36
40
44
48
100 110 120 130 140 150 160 170 180 190 200
I
D
- Amperes
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1 , V
GS
= 10V
V
DS
= 37.5V
T
J
= 25ºC, 125ºC
Fi g . 13. R esistive Tu r n -o n
Ri se Ti me vs. Ju n cti o n Temper a tu r e
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A
I
D
= 100A
Fig . 18. R e si st ive Tu rn - o f f
Switchi ng Ti mes vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
123456789101112131415
R
G
- Ohms
t
f
- Nanoseconds
0
40
80
120
160
200
240
280
320
360
400
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC , V
GS
= 10V
V
DS
= 37.5V
I
D
= 100A
I
D
= 200A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH340N075T2
IXFT340N075T2
IXYS REF: F_340N075T2(V8)9-15-09
Fi g . 19. Maximum Tran si en t Th er mal I mped an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 19. Maximum Tran si en t Th er mal I mped an ce
afaf
0.20
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