DSA30C100HB
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA30C100HB
Backside: cathode
FAV
F
VV0.72
RRM
15
100
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA30C100HB
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.91
R1.75 K/
W
R
min.
15
V
RSM
V
250T = 25°C
VJ
T = °C
VJ
m
A
2.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
85
W
T = 25°C
C
RK/
W
15
100
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.06
T = 25°C
VJ
125
V
F0
V
0.46T = °C
VJ
175
r
F
11.7 m
Ω
V
0.72T = °C
VJ
I = A
F
V
15
0.90
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
100
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
146
j
unction capacitance V = V12 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
340
A
100
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
100
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA30C100HB
preliminary
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
D
S
A
30
C
100
HB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-247AD (3)
=
=
=
DSA30C100PB TO-220AB (3) 100
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 50 A
per terminal
150-55
DSA30C100PN TO-220ABFP (3) 100
TO-247
Similar Part Package Voltage class
DSA30C100QB TO-3P (3) 100
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA30C100HB 505053Tube 30DSA30C100HBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.46
mΩ
V
0 max
R
0 max
slope resistance * 9.1
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA30C100HB
preliminary
S
ØPØ P1 D2
D1
E1
4
123
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
