PD - 94213 IRFP254N HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 125m G ID = 23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 23 16 92 220 1.5 20 300 14 22 7.4 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.24 --- 0.68 --- 40 C/W 1 7/20/01 IRFP254N Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 250 --- --- 2.0 15 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.33 --- --- --- --- --- --- --- --- --- --- 14 34 37 29 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 125 m VGS = 10V, ID = 14A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 14A 25 VDS = 250V, VGS = 0V A 250 VDS = 200V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 100 ID = 14A 17 nC VDS = 200V 44 VGS = 10V, See Fig. 6 and 13 --- VDD = 125V --- ID = 14A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 D Between lead, 5.0 --- --- 6mm (0.25in.) nH G from package --- 13 --- and center of die contact S --- 2040 --- VGS = 0V --- 260 --- VDS = 25V --- 62 --- pF = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 23 --- --- showing the A G integral reverse --- --- 92 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 14A, VGS = 0V --- 210 310 ns TJ = 25C, IF = 14A --- 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 3.1mH ISD 14A, di/dt 460A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. RG = 25, IAS = 14A,VGS=10V 2 www.irf.com IRFP254N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 4.5V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 4.5V 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 4.0 TJ = 175 C 10 TJ = 25 C V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 4.0 20s PULSE WIDTH TJ = 175 C 1 0.1 9.0 ID = 23A 3.0 2.0 1.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP254N VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 3000 Ciss 2000 Coss 1000 Crss VGS , Gate-to-Source Voltage (V) 20 4000 ID = 14A VDS = 200V VDS = 125V VDS = 50V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 1000 0 20 100 80 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 175 C 10 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.2 100 10 100sec 1msec 1 0.1 10msec Tc = 25C Tj = 175C Single Pulse 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP254N 25 VDS VGS I D , Drain Current (A) 20 RD D.U.T. RG + -VDD 15 VGS Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP254N 600 L VDS D .U .T RG IA S 2V0GS V D R IV E R + - VD D A 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 500 BOTTOM ID 5.6A 9.8A 14A 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFP254N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRFP254N TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D - 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 N OTE S : 5.50 (.217) 4.50 (.177) 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U T L IN E T O -24 7 -A C . 3 -C - 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M C A S 3.40 (.133) 3.00 (.118) 2.60 (.102) 2.20 (.087) L E A D A S S IG N M E N T S 1 2 3 4 - G A TE D R A IN S O UR C E D R A IN TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN T HE ASS EMBLY LINE "H" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO IRFPE30 56 ASS EMBLY LOT CODE 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 7/01 8 www.irf.com