TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices Qualified Level
2N5671 2N5672
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5671 2N5672 Unit
Collector-Emitter Voltage VCEO 90 120 Vdc
Collector-Base Voltage VCBO 120 150 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 10 Adc
Collector Current IC 30 Adc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 6.0
140 W
W
Operating & Storage Temperature Range Top, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 1.25 0C/W
1) Derate linearly 34.2 mW/0C for TA > +250C
2) Derate linearly 800 mW/0C for TC > +250C
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N5671
2N5672 V(BR)CEO
90
120
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N5671
2N5672 V(BR)CER
110
140
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N5671
2N5672 V(BR)CEX
120
150
Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc ICEO 10 mAdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = 1.5 Vdc 2N5671
VCE = 135 Vdc, VBE = 1.5 Vdc 2N5672 ICEX
12
10 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N5671, 2N5672 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCB = 120 Vdc 2N5671
VCB = 150 Vdc 2N5672 ICBO
25
25 mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc IEBO 10 mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 15 Adc, VCE = 2.0 Vdc
IC = 20 Adc, VCE = 5.0 Vdc hFE
20
20
100
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
IC = 30 Adc, IB = 6.0Adc VCE(sat)
0.75
5.0 Vdc
Base-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc VBE(sat) 1.5 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz hfe 10 40
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 900 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = 1.2 Adc ton 0.5 µs
Turn-Off Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = IB2 = 1.2 Adc toff 1.5 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test
VCE = 24 Vdc, IC = 5.8 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 4.67 Vdc, IC = 30 Adc
Test 4
VCE = 90 Vdc, IC = 0.19 Adc 2N5671
Test 5
VCE = 120 Vdc, IC = 0.11 Adc 2N5672
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
