BZA420A,115 - NEXPERIA

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DATA SH EET

Product data sheet

Supersedes data of 1998 Oct 30

1999 May 20

DISCRETE SEMICONDUCTORS

BZA420A

Quadruple ESD transient voltage

suppressor

ook, halfpage

M3D302

1999 May 20 2

NXP Semiconductors Product data sheet

Quadruple ESD transient voltage

suppressor BZA420A

FEATURES

•ESD rating >8 kV, according to IEC1000-4-2

•SOT457 surface mou nt package

•Common anode configuration

•Non-clamping range −0.5 to 20 V

•Maximum revers e pe ak power dissipation:

19.6 W at tp = 1 ms

•Maximum clamping voltage at peak pulse current:

28 V at IZSM = 0.7 A.

APPLICATIONS

•Computers and pe ripherals

•Audio and video eq uipment

•Communication syste ms

•Medical equipment.

DESCRIPTION

Monolithic transient voltage suppressor diode in a six lead

SOT457 (SC-74) package for 4-bit wide ESD transient

suppression at 20 V level.

PINNING

PIN DESCRIPTION

1cathode 1

2common

3cathode 2

4cathode 3

5common

6cathode 4

Fig.1 Simplified outline (SOT457) and symbol.

handbook, halfpage

132

56 1

Top view

MAM357

Marking code: Z0.

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).

Notes

1. Ts is the temperature at the sold ering point of the anode pin.

2. DC working current limited by Ptot max.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

IZworking curr en t Ts = 60 °C; note 1 −note 2 mA

IFcontinuous forward current Ts = 60 °C−100 mA

IFSM non-repe titive peak forward

current tp = 1 ms; square pulse −3.75 A

IZSM non-repe titiv e pe ak reverse

current tp = 1 ms; square pulse; see Fig.2 −0.7 A

Ptot total power dissipation Ts = 60 °C; see Fig.3 −720 mW

PZSM non repetitive peak reverse power

dissipation square pulse; tp = 1 ms; see Fig.4 −19.6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

1999 May 20 3

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

THERMAL CHARACTE RISTICS

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point one or more diodes loaded 125 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

VZworking voltage IZ = 1 mA 19 20 21 V

VFforward voltage IF = 200 mA − − 1.3 V

VZSM non-repetitive peak reverse voltage IZSM = 0.7 A; tp = 1 ms − − 28 V

IRreverse current VR = 15 V − − 100 nA

rdif differential resistance IZ = 1 mA − − 125 Ω

SZtemperatur e coe fficient of work ing

voltage IZ = 5 mA −16.2 −mV/K

Cddiode capacitance see Fig.5

VR = 0; f = 1 MHz − − 48 pF

VR = 15 V; f = 1 MHz − − 14 pF

1999 May 20 4

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

Fig.2 Maximum non-repetitive pea k re verse

current as a func tion of pulse time.

handbook, halfpage

−

IZSM

(A)

(ms)

MDA197

−1

110

Fig.3 Power derating curve.

All diodes loaded.

handbook, halfpage

0 50 100 200

1000

Ptot

(mW)

Ts (oC)

800

150

600

400

200

MDA198

Fig.4 Maximum non-repetitive pea k re verse

power dissipation as a func tion of pulse

duration (squ are pulse).

PZSM = VZSM × IZSM.

VZSM is the non-repetitive peak reverse voltage at IZSM.

handbook, halfpage

PZSM

(W)

tp (ms)

MDA199

−1

110

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

Tj = 25 °C; f = 1 MHz.

handbook, halfpage

0510

(V) 15

(pF)

MDA200

1999 May 20 5

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

Fig.6 ESD clamping test set-up an d waveforms.

handbook, full pagewidth

MBK386

450 Ω

50 Ω

Note 1: attenuator is only used for open

socket high voltage measurements

IEC 1000-4-2 network

CZ = 150 pF; RZ = 330 Ω

1/4 BZA420A

RG 223/U

50 Ω coax

ESD TESTER DIGITIZING

OSCILLOSCOPE

10×

ATTENUATOR

note 1

GND

unclamped +1 kV ESD voltage waveform

(IEC 1000−4−2 network) clamped +1 kV ESD voltage waveform

(IEC 1000−4−2 network)

unclamped −1 kV ESD voltage waveform

(IEC 1000−4−2 network) clamped −1 kV ESD voltage waveform

(IEC 1000−4−2 network)

GND

GND GND

vertical scale = 100 V/Div

horizontal scale = 50 ns/Div vertical scale = 10 V/Div

horizontal scale = 50 ns/Div

vertical scale = 100 V/Div

horizontal scale = 50 ns/Div vertical scale = 10 V/Div

horizontal scale = 50 ns/Div

1999 May 20 6

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

APPLICATION INFORMATION

Typical common anod e application

A quadruple transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one

package. Two simplified ex amples are shown in Figs 7 and 8.

Fig.7 Computer interface protec tion.

handbook, full pagewidth

GND

keyboard,

terminal,

printer,

etc. I/O

BZA420A

FUNCTIONAL

DECODER

MGK456

Fig.8 Microprocessor protection.

handbook, full pagewidth

MGK457

I/O

ROM

RAM

CPU

CLOCK

GND

VDD

VGG

data bus

control bus

address bus

BZA420A

1999 May 20 7

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

Device placement and printed-circuit board layout

Circuit board layout is of extreme importance in the

suppression of trans i ents. The clamping voltag e of the

BZA420A is determined by the peak transient current and

the rate of rise of that current (di/d t) . Since parasitic

inductances can furth er add to the clamping voltage

(V = L di/dt) the series cond uctor lengths on the

printed-circuit board should be kept to a minimum. This

includes the lead length of the suppression element.

In addition to minimizing conductor length the following

printed-circuit board layout guidelines are recommended:

1. Place the suppress io n e le m ent close to the input

terminals or connectors

2. Keep parallel signal paths to a minimum

3. Avoid running prote ction conductors in parallel with

unprotected conductors

4. Minimize all printed-circuit board loop areas including

power and ground loops

5. Minimize the length of the transient return path to

ground

6. Avoid using shared transient return paths to a common

ground point.

1999 May 20 8

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT457 SC-74

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 6 leads SOT45

UNIT A1bpcDEHELpQywv

mm 0.1

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

1.1

0.9

97-02-28

01-05-04

1999 May 20 9

NXP Semiconductors Pr oduct data sheet

Quadruple ESD transient voltage

suppressor BZA420A

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for produc t

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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http://www.nxp.com/profile/terms, including those

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands 115002/00/03/pp10 Date of release: 1999 May 20 Document orde r number: 9397 750 05952