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DATA SH EET
Product data sheet
Supersedes data of 1998 Oct 30
1999 May 20
DISCRETE SEMICONDUCTORS
BZA420A
Quadruple ESD transient voltage
suppressor
db
ook, halfpage
M3D302
1999 May 20 2
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA420A
FEATURES
ESD rating >8 kV, according to IEC1000-4-2
SOT457 surface mou nt package
Common anode configuration
Non-clamping range 0.5 to 20 V
Maximum revers e pe ak power dissipation:
19.6 W at tp = 1 ms
Maximum clamping voltage at peak pulse current:
28 V at IZSM = 0.7 A.
APPLICATIONS
Computers and pe ripherals
Audio and video eq uipment
Communication syste ms
Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 20 V level.
PINNING
PIN DESCRIPTION
1cathode 1
2common
3cathode 2
4cathode 3
5common
6cathode 4
Fig.1 Simplified outline (SOT457) and symbol.
handbook, halfpage
132
4
56 1
3
4
6
2
5
Top view
MAM357
Marking code: Z0.
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Notes
1. Ts is the temperature at the sold ering point of the anode pin.
2. DC working current limited by Ptot max.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
IZworking curr en t Ts = 60 °C; note 1 note 2 mA
IFcontinuous forward current Ts = 60 °C100 mA
IFSM non-repe titive peak forward
current tp = 1 ms; square pulse 3.75 A
IZSM non-repe titiv e pe ak reverse
current tp = 1 ms; square pulse; see Fig.2 0.7 A
Ptot total power dissipation Ts = 60 °C; see Fig.3 720 mW
PZSM non repetitive peak reverse power
dissipation square pulse; tp = 1 ms; see Fig.4 19.6 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 65 +150 °C
1999 May 20 3
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
THERMAL CHARACTE RISTICS
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point one or more diodes loaded 125 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode
VZworking voltage IZ = 1 mA 19 20 21 V
VFforward voltage IF = 200 mA 1.3 V
VZSM non-repetitive peak reverse voltage IZSM = 0.7 A; tp = 1 ms 28 V
IRreverse current VR = 15 V 100 nA
rdif differential resistance IZ = 1 mA 125
SZtemperatur e coe fficient of work ing
voltage IZ = 5 mA 16.2 mV/K
Cddiode capacitance see Fig.5
VR = 0; f = 1 MHz 48 pF
VR = 15 V; f = 1 MHz 14 pF
1999 May 20 4
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
Fig.2 Maximum non-repetitive pea k re verse
current as a func tion of pulse time.
handbook, halfpage
10
1
10
1
IZSM
(A)
t
p
(ms)
MDA197
10
1
110
Fig.3 Power derating curve.
All diodes loaded.
handbook, halfpage
0 50 100 200
1000
0
Ptot
(mW)
Ts (oC)
800
150
600
400
200
MDA198
Fig.4 Maximum non-repetitive pea k re verse
power dissipation as a func tion of pulse
duration (squ are pulse).
PZSM = VZSM × IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
handbook, halfpage
10
2
10
1
PZSM
(W)
tp (ms)
MDA199
10
1
110
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
Tj = 25 °C; f = 1 MHz.
handbook, halfpage
0510
V
R
(V) 15
50
0
Cd
(pF)
40
30
20
10
MDA200
1999 May 20 5
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
Fig.6 ESD clamping test set-up an d waveforms.
handbook, full pagewidth
MBK386
450
50
Note 1: attenuator is only used for open
socket high voltage measurements
IEC 1000-4-2 network
CZ = 150 pF; RZ = 330
1/4 BZA420A
RG 223/U
50 coax
RZ
CZ
ESD TESTER DIGITIZING
OSCILLOSCOPE
10×
ATTENUATOR
note 1
GND
unclamped +1 kV ESD voltage waveform
(IEC 100042 network) clamped +1 kV ESD voltage waveform
(IEC 100042 network)
unclamped 1 kV ESD voltage waveform
(IEC 100042 network) clamped 1 kV ESD voltage waveform
(IEC 100042 network)
GND
GND GND
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
1999 May 20 6
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
APPLICATION INFORMATION
Typical common anod e application
A quadruple transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one
package. Two simplified ex amples are shown in Figs 7 and 8.
Fig.7 Computer interface protec tion.
handbook, full pagewidth
GND
keyboard,
terminal,
printer,
etc. I/O
BZA420A
A
B
C
D
FUNCTIONAL
DECODER
MGK456
Fig.8 Microprocessor protection.
handbook, full pagewidth
MGK457
I/O
ROM
RAM
CPU
CLOCK
GND
VDD
VGG
data bus
control bus
address bus
BZA420A
1999 May 20 7
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the
suppression of trans i ents. The clamping voltag e of the
BZA420A is determined by the peak transient current and
the rate of rise of that current (di/d t) . Since parasitic
inductances can furth er add to the clamping voltage
(V = L di/dt) the series cond uctor lengths on the
printed-circuit board should be kept to a minimum. This
includes the lead length of the suppression element.
In addition to minimizing conductor length the following
printed-circuit board layout guidelines are recommended:
1. Place the suppress io n e le m ent close to the input
terminals or connectors
2. Keep parallel signal paths to a minimum
3. Avoid running prote ction conductors in parallel with
unprotected conductors
4. Minimize all printed-circuit board loop areas including
power and ground loops
5. Minimize the length of the transient return path to
ground
6. Avoid using shared transient return paths to a common
ground point.
1999 May 20 8
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT457 SC-74
wBM
bp
D
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT45
7
UNIT A1bpcDEHELpQywv
mm 0.1
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
1999 May 20 9
NXP Semiconductors Pr oduct data sheet
Quadruple ESD transient voltage
suppressor BZA420A
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for produc t
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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http://www.nxp.com/profile/terms, including those
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infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
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Export control This document as well as the item(s)
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p art of any quotation or cont ra ct, is b elieve d to be accurate and reli a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp10 Date of release: 1999 May 20 Document orde r number: 9397 750 05952