1
ISSUE 1 - MARCH 2001
ZVN4525E6
SUMMARY
(
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
•High voltage
•Low on-resistance
•Fast switching speed
•Low gate drive
•Low threshold
•Complementary P-channel Type ZVP4525E6
•SOT23-6 package
APPLICATIONS
•Earth Recall and dialling switches
•Electronic hook switches
•High Voltage Power MOSFET Drivers
•Telecom call routers
•Solid state relays
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZVN4525E6TA 7 8mm embossed 3000 units
ZVN4525E6TC 13 8mm embossed 10000 units
DEVICE MARKING
•N52
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Top View
SOT23-6
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ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 250 V
Gate Source Voltage VGS ±40 V
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a) ID
ID
230
183 mA
mA
Pulsed Drain Current (c) IDM 1.44 A
Continuous Source Current (Body Diode) IS1.1 A
Pulsed Source Current (Body Diode) ISM 1.44 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD1.1
8.8 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 113 °C/W
Junction to Ambient (b) RθJA 65 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
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CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNI
TCONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 250 285 V ID=1mA, VGS=0V
Zero Gate Voltage Drain Current IDSS 35 500 nA VDS=250V, VGS=0V
Gate-Body Leakage IGSS ±1 ±100 nA VGS=±40V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 0.8 1.4 1.8 V ID=1mA, VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 5.6
5.9
6.4
8.5
9.0
9.5
Ω
Ω
Ω
VGS=10V, ID=500mA
VGS=4.5V, ID=360mA
VGS=2.4V, ID=20mA
Forward Transconductance (3) gfs 0.3 0.475 S VDS=10V,ID=0.3A
DYNAMIC (3)
Input Capacitance Ciss 72 pF VDS=25V,V
GS=0V,
f=1MHz
Output Capacitance Coss 11 pF
Reverse Transfer Capacitance Crss 3.6 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.25 ns VDD =30V, ID=360mA
RG=50Ω,V
qs=10V
(refer to test circuit)
Rise Time tr1.70 ns
Turn-Off Delay Time td(off) 11.40 ns
Fall Time tf3.5 ns
Total Gate Charge Qg2.6 3.65 nC VDS=25V,VGS=10V,
ID=360mA(refer to
test circuit)
Gate-Source Charge Qgs 0.2 0.28 nC
Gate Drain Charge Qgd 0.5 0.70 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.97 V Tj=25°C, IS=360mA,
VGS=0V
Reverse Recovery Time (3) trr 186 260 ns Tj=25°C, IF=360mA,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 34 48 nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001
ZVN4525E6
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TYPICAL CHARACTERISTICS
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ZVN4525E6
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CHARACTERISTICS
ISSUE 1 - MARCH 2001
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CHARACTERISTICS
BasicGateChargeWaveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
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ZVN4525E6
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PACKAGE DIMENSIONS
A1
2
L
DATUM A
a
C
E
AA2
E1
D
be
e1
PAD LAYOUT DETAILS
DIM Millimetres Inches
Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L0° 10° 0° 10°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
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Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611
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Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
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