Phillps Components Data sheet status Preliminary specification date of Issue | July 1990 FEATURES * interdigitated structure; high emitter efficiency. Diffused emitter ballasting resistors providing excellent current sharing and withstanding at a high VSWR. Gold metallization realizes very good stability of the characteristics and excellent life time. Multicell geometry gives good balance of dissipated power and low thermal resistance. Input and output matching cell allows an easier design of circuits. QUICK REFERENCE DATA MZ0912B100Y NPN silicon planar epitaxial microwave power transistor APPLICATION Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor intended for use in common base class C broadband pulse power amplifier at 960 to 1215 MHz for TACAN application. Transistor has a FO-57C metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C. Microwave performance up to Tmp = 25 C in a common base class C broadband amplifier. blue binder, tab 12 MODE OF OPERATION | _ f (GHz) Vec (V) PL (W) Gp (dB) nC (%) z/Zz (Q) class C; 0.960 tp = 10 ps; to = 10% 1.215 50 > 100 >Z >42 see Figs 7 and 8 WARNING Product and environmental safety - toxic materials necessary safety precautions. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or cispose of this product should be aware of its nature and of the After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general industrial or domestic Philips Components PHILIPS eb PHILIPSPhilips Components NPN silicon planar epitaxial microwave power transistor MECHANICAL DATA Preliminary specification MZ0912B100Y 10.5 10.5 max max 72867412 23 max July 1990 Fig.1 FO-57C. PINNING PIN DESCRIPTION 1 collector 2 emitter base connected to flange 2Philips Components Preliminary specification NPN silicon planar epitaxial microwave Mz0912B100Y power transistor LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter - 65 Vv Voces collector-emitter voltage Ree =02 - 60 Vv VcEo collector-emitter voltage open base - 20 Vv VeBo emitter-base voltage open collector - 3 Vv Io collector current (average) tp < 10 ps; 5<10% - 6 A Prot total power dissipation peak power; Tinb = 75 C; tp $10 us; 55 10% : 290 Ww Tstg storage temperature range -65 200 C Tj operating junction temperature - 200 C Tsid soldering temperature ts10s up to 0.2 mm from ceramic : 235 C MCAB741 200 Tmb (C) Fig.2 Maximum power dissipation derating as a function of mounting base temperature; tp = 10 ps; 5 = 10%; Ptot Max = 290 W. THERMAL CHARACTERISTICS Tj = 125 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MAX. UNIT Pith j-mb thermal resistance from junction to mounting base CW 3.2 KAW Rth mb-h thermal resistance from mounting base to heatsink cw 0.2 KAV 2th thermal impedance from junction to heatsink note 1 0.43 K/W Notes 1. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp = 10 us; 5 = 10%. July 1990 3Philips Components Preliminary specification NPN silicon planar epitaxial microwave I MZ0912B100Y power transistor CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MAX. UNIT IcBo collector cut-off current Vop = 65 V; le = 0 40 mA IcBo collector cut-off current Vop = 50V; le =0 4 mA Ices collector cut-off current Voce = 60 V; Ree =0 40 mA lego emitter cut-off current Vep=1.5V; Ic =0 400 pA APPLICATION INFORMATION Microwave performance up to Tmp = 25 C measured in the test jig as shown in Fig.4 and working in class C broadband mode in pulse; note 2. MODEOFOPERATION| f(GHz) | Yec | prow | GptdB) | nC(%) 2/Zz (Q) note 1 Pp class C 0.960 to > 100 27 342 tp = 10 us; 8 = 10% 1.245 50 typ.115 | typ.7.6 _| typ. 44 see Figs 7 and 8 tp= 300s; 8=10% | T-Aato 50 | typ.125s| typ.8 typ.50 | seeFig.3 Notes 1. Voc during pulse. 2. Operating conditions and performance for other pulse formats can be made available on request. List of components L1= Cuwire @ = 0.65 mm , total length = 12 mm, height of loop = 12 mm L2 = Cu wire @ = 0.65 mm, internal diameter 3 mm, 4 turns, L=5mm C1= DC block, 100 pF (ATC, ref. 100A101KP50X) C2= tantalum capacitor 10 1F/50 V C3 = electrolytic capacitor 470 WF/63 V C4= feedthru bypass capacitor (Erie, ref. 1250-003) C5= C6 = Variable gigatrim capacitor 0.6 - 4.5 pF, (Tekelec, ref. 727.1) Tus 1 ys PLA j<~-- 300 zs +] 7281925 3ms Fig.3 Pulse definition. duly 1990 4Philips Components Preliminary specification NPN silicon planar epitaxial microwave power transistor MZ0912B100Y r= 10 40 mm Substrate: Epsilam 10 Thickness: 0.635 mm All dimensions in mm. c3 Fig.4 Broadband test circuit. 7226293 7226292 July 1990Philips Components Preliminary specification NPN sili itaxial microwav silicon planar epitaxial microwave MZ0912B100Y power transistor MCAB75, 130 Pp 7c 0 ) 120 110 095 1.0 105 11 145 12 1.25 095 10 105) 110 195) 1.2 1.25 f (GHz) f (GHz) Fig.5 Load power P,_ as a function of frequency; Fig.6 Collector efficiency as a function of frequency. Voc = 50 V; tp = 10 us; 8 = 10%. (In broadband test circuit as shown in Fig.4). (In broadband test circuit as shown in Fig.4). MCAR72 1 Fig.7 Input impedance as a function of frequency for PL = 100 W; associated with optimum load impedance; Vcc = 50 V; Zp = 10.9. July 1990 6Philips Components Preliminary specification NPN silicon planar epitaxial microwave MZ0912B100Y power transistor Fig.8 Optimum load impedance as a function of frequency for P_ = 100 W; associated with input impedance; Vcc = 50 V; Zo = 10.9. July 1990 7Philips Components Preliminary specification NPN silicon planar epitaxial microwave MZ0912B100Y power transistor 00 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification | This data sheet contains pretiminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Philips Export B.V. 1990 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 9397 274 80011 Msg0-1194/Y July 1990 8