BU426, BU426A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 900 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BU426 Collector-base voltage (IE = 0) BU426A Continuous collector current BU426A BU426 BU426A Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 50C case temperature Operating junction temperature range Storage temperature range NOTE V CBO E T E L O S B O BU426 Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL VCES VCEO VALUE 800 900 800 900 375 400 UNIT V V V IC 6 A ICM 10 A IB +2, -0.1 A IBM 3 A Ptot 70 W Tj -65 to +150 C Tstg -65 to +150 C 1: This value applies for tp 2 ms, duty cycle 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH MIN (see Note 2) BU426 375 BU426A 400 TYP MAX V VCE = 800 V VBE = 0 BU426 1 Collector-emitter VCE = 900 V VBE = 0 BU426A 1 cut-off current VCE = 800 V VBE = 0 TC = 125C BU426 2 VCE = 900 V VBE = 0 TC = 125C BU426A 2 VEB = 10 V IC = 0 VCE = 5V IC = 0.6 A IC = 2.5 A Emitter cut-off current Forward current transfer ratio Collector-emitter IB = 0.5 A saturation voltage IB = 1.25 A Base-emitter IB = 0.5 A saturation voltage IB = 1.25 A IC = 4A IC = 2.5 A IC = mA 10 4A (see Notes 3 and 4) UNIT 30 mA 60 1.5 (see Notes 3 and 4) 3 1.4 (see Notes 3 and 4) 1.6 V V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics E T E L O S B O PARAMETER RJC MIN TYP Junction to case thermal resistance MAX UNIT 1.1 C/W resistive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER ton Turn on time ts Storage time tf Fall time tf Fall time TEST CONDITIONS IC = 2.5 A IB(on) = 0.5 A VCC = 250 V (see Figures 1 and 2) IC = 2.5 A IB(on) = 0.5 A VCC = 250 V TC = 95C MIN IB(off) = -1 A IB(off) = -1 A MAX 0.3 0.6 s 2 3.5 s 0.15 0.2 UNIT s 0.75 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU426, BU426A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 F 120 T V1 100 100 F 47 tp V cc = 250 V TUT 15 V1 100 680 F 82 BD136 tp = 20 s Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Figure 1. Resistive-Load Switching Test Circuit E T E L O S B O C 90% 90% E IC A - B = td B - C = tr B E - F = tf D - E = ts A - C = ton D - F = t off 10% 10% 90% D F 0% dIB 2 A/s dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BU426, BU426A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP741AF 100 hFE - Typical DC Current Gain VCE = 1.5 V VCE = 5 V 10 TCP741AG 7 TC = 25C 6 IC = IC = IC = IC = 5 4 2 1 0 1*0 10 0 0*5 IC - Collector Current - A IC = IC = IC = IC = 5 4 4 3 2 1 A A A A 3 2 1 0 TCP741AI 1*2 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V 2*0 BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP741AH TC = 100C 6 1*5 Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 7 1*0 IB - Base Current - A Figure 3. TC = 25C 1*1 1*0 0*9 0*8 IC = IC = IC = IC = 0*7 4 3 2 1 A A A A 0*6 0 0*5 1*0 IB - Base Current - A Figure 5. 1*5 2*0 0 0*2 0*4 0*6 0*8 1*0 1*2 1*4 1*6 IB - Base Current - A Figure 6. 4 A A A A 3 E T E L O S B O 1*0 0*1 4 3 2 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU426, BU426A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP741AA 10 1*0 0.1 tp = 0.2 s tp = 0.5 s tp = 1 s tp = 2 s 6 s E T E L O S B O tp = 20 s tp = DC Operation 0*01 1*0 BU426 BU426A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5