BU426, BU426A
NPN SILICON POWER TRANSISTORS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Rugged Triple-Diffused Planar Construction
●900 Volt Blocking Capability
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) BU426
BU426A VCBO
800
900 V
Collector-emitter voltage (VBE = 0) BU426
BU426A VCES
800
900 V
Collector-emitter voltage (IB = 0) BU426
BU426A VCEO
375
400 V
Continuous collector current IC6A
Peak collector current (see Note 1) ICM 10 A
Continuous base current IB+2, -0.1 A
Peak base current (see Note 1) IBM ±3 A
Continuous device dissipation at (or below) 50°C case temperature Ptot 70 W
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
OBSOLETE
BU426, BU426A
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCEO(sus)
Collector-emitter
sustaining voltage IC = 100 mA L = 25 mH (see Note 2) BU426
BU426A
375
400 V
ICES
Collector-emitter
cut-off current
VCE = 800 V
VCE = 900 V
VCE = 800 V
VCE = 900 V
VBE =0
VBE =0
VBE =0
VBE =0
TC = 125°C
TC = 125°C
BU426
BU426A
BU426
BU426A
1
1
2
2
mA
IEBO
Emitter cut-off
current VEB = 10 V IC=0 10 mA
hFE
Forward current
transfer ratio VCE = 5 V IC= 0.6 A (see Notes 3 and 4) 30 60
VCE(sat)
Collector-emitter
saturation voltage
IB = 0.5 A
IB = 1.25 A
IC= 2.5A
IC= 4A (see Notes 3 and 4) 1.5
3V
VBE(sat)
Base-emitter
saturation voltage
IB = 0.5 A
IB = 1.25 A
IC= 2.5A
IC= 4A (see Notes 3 and 4) 1.4
1.6 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.1 °C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n on tim e IC = 2.5 A
VCC = 250 V
IB(on) = 0.5 A
(see Figures 1 and 2)
IB(off) = -1 A 0.3 0.6 µs
tsStorage time 23.5µs
tfFall time 0.15 µs
tfFall time IC = 2.5 A
VCC = 250 V
IB(on) = 0.5 A
TC = 95°C
IB(off) = -1 A 0.2 0.75 µs
OBSOLETE
BU426, BU426A
NPN SILICON POWER TRANSISTORS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
µ
100
V1
680 F
µ
V1
Vcc = 250 V
+25 V
BD135
47
Ω
100
Ω
120
Ω
15
Ω
82
Ω
100
Ω
BD136
680 F
µ
TUT
T
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
0%
C
B
90%
10%
A10%
90%
10%
90%
E
F
D
IB
IC
IB(on)
IB(off)
0%
dIB
dt ≥ 2 A/µs
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = toff
OBSOLETE
BU426, BU426A
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
hFE - Typical DC Current Gain
1·0
10
100 TCP741AF
VCE = 1.5 V
VCE = 5 V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0 0·5 1·0 1·5 2·0
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
1
2
3
4
5
6
7TCP741AG
IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A
TC = 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0 0·5 1·0 1·5 2·0
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
1
2
3
4
5
6
7TCP741AH
IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A
TC = 100°C
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6
VBE(sat) - Base-Emitter Saturation Voltage - V
0·6
0·7
0·8
0·9
1·0
1·1
1·2 TCP741AI
TC = 25°C
IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A
OBSOLETE
BU426, BU426A
NPN SILICON POWER TRANSISTORS
5
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 7.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0.1
1·0
10
100 SAP741AA
BU426
BU426A
tp = 0.2 µs
tp = 0.5 µs
tp = 1 µs
tp = 2 µs
tp = 6 µs
tp = 20 µs
DC Operation
OBSOLETE
