© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ300 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C73A
IDM TC= 25°C, pulse width limited by TJM 292 A
IAR TC= 25°C73A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
MdMounting torque (TO-264) 0.4/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1mA 300 V
VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V
IGSS VGS = ±30 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 45 mΩ
Note 1
DS98870B(08/03)
G = Gate D = Drain
S = Source TAB = Drain
S
G
D(TAB)
TO-264 (IXFK)
IXFK 73N30Q VDSS = 300 V
IXFX 73N30Q ID25 =73 A
RDS(on) =45mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
PLUS 247TM (IXFX)
GD
(TAB)
HiPerFETTM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
switching (UIS) rated
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
z Temperature and lighting controls
Advantages
zPLUS 247TM package for clip or spring
mounting
zSpace savings
zHigh power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 30 55 S
Ciss 5400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 370 pF
td(on) 37 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 ns
td(off) RG = 1 Ω (External) 82 ns
tf12 ns
Qg(on) 195 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC
Qgd 82 nC
RthJC 0.22 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 73 A
ISM Repetitive; 292 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 0.8 µC
IRM 7A
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline (IXFX)
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 Outline (IXFK)
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
IXFK 73N30Q
IXFX 73N30Q
© 2003 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
12 0
15 0
18 0
03691215
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
20
40
60
80
0 12345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
I
D
= 73A
I
D
= 36.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cent igrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
3.1
0 30 60 90 120 150 180
I
D
- Amperes
R
DS(on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXFK 73N30Q
IXFX 73N30Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 11. Capacitance
10 0
10 0 0
10000
0 10203040
V
DS
- Volts
Capacitance - p
F
C
iss
C
oss
C
rss
f = 1M hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0 50 100 150 200
Q
G
- nanoCoulombs
V
GS
- Volts
V
DS
= 125V
I
D
= 36.5A
I
G
= 10mA
Fig. 7. Input Admittance
0
30
60
90
12 0
15 0
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
125ºC
Fig. 12. Maxim um Transient Thermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th)JC
-
(ºC/W)
Fig. 8. Transconductance
0
20
40
60
80
10 0
12 0
0 30 60 90 120 150 180 210
I
D
- Amperes
G
fs
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
30
60
90
12 0
15 0
18 0
0.4 0.6 0.8 1 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC T
J
= 25ºC
IXFK 73N30Q
IXFX 73N30Q
