DS30120 Rev. 6 - 2 1 of 3 2N7002DW
www.diodes.com ã Diodes Incorporated
2N7002DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·Dual N-Channel MOSFET
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version (Note 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol 2N7002DW Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage (Note 1) Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Total Power Dissipation
Derating above TA = 25°C (Note 1) Pd200
1.60 mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
A
M
JL
D
BC
H
K
G
F
D2G1S1
S2G2D1
Mechanical Data
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a0° 8°
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
S1
D1
D2
S2
G1
G2
·Case: SOT-363
·Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe). Please see Ordering Information,
Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K72
·Ordering & Date Code Information: See Page 2
·Weight: 0.006 grams (approx.)
SPICE MODEL: 2N7002DW
DS30120 Rev. 6 - 2 2 of 3 2N7002DW
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ¾¾
1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 1.0 ¾2.0 V VDS = VGS, ID = 250mA
Static Drain-Source On-Resistance @ Tj = 25°C
@T
j = 125°C RDS (ON) ¾3.2
4.4
7.5
13.5 WVGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ¾AVGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾11 25 pF
Reverse Transfer Capacitance Crss ¾2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾7.0 20 ns VDD = 30V, ID= 0.2A,
RL = 150W,V
GEN = 10V,
RGEN = 25W
Turn-Off Delay Time tD(OFF) ¾11 20 ns
Ordering Information (Note 4)
Device Packaging Shipping
2N7002DW-7 SOT-363 3000/Tape & Reel
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: 2N7002DW-7-F.
Marking Information
K72
K72
YM
YM
K72= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
DS30120 Rev. 6 - 2 3 of 3 2N7002DW
www.diodes.com
0
0.2
0.4
0.6
0.8
1
.
0
01 2 345
V = 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
5.5V
5.0V
V,DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
I,DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
I , DRAIN CURRENT (A)
D
Fig. 2 On-Resistance vs Drain Current
V=5.0V
GS
T=25°C
j
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
T , JUNCTION TEMPERATURE (°C)
j
Fig. 3 On-Resistance vs Junction Temperature
VGS = 10V, I =
D0.5A
V = 5.0V, I = 0.05A
GS D
0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fig. 4 On-Resistance vs. Gate-Source Voltage
I= 50mA
D
1
2
3
4
5
6
0 2 4 6 8 1012141618
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
I= 500mA
D
