80812 TKIM/N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/9
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
2SC4134
Bipolar Transistor
100V, 1A, Low VCE(sat), NPN Single TP/TP-FA
Applications
• Power supplies, relay drivers, lamp drivers
Features
• Adoption FBET, MBIT processes • High breakdown voltage and large current capacity
• Fast switching speed
• Small and slim package permitting 2SC4134-applied sets to be made more compact
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 120 V
Collector-to-Emitter Voltage VCEO 100 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC1A
Collector Current (Pulse) ICP 2A
Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions
unit : mm (typ)
7518-003 7003-003
Ordering number : EN2510B
Product & Package Information
• Package : TP • Package : TP-FA
•
JEITA, JEDEC : S
C-64, TO-251 •
JEITA, JEDEC :
SC-63, TO-252
•
Minimum Packing Quantity
:
500 pcs./bag •
Minimum Packing Quantity
:
700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA)
TL
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8
5.5 1.5
1 : Base
2 : Collecto
r
3 : Emitter
4 : Collecto
r
TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Base
2 : Collecto
r
3 : Emitter
4 : Collecto
r
TP-FA
C4134
LOT No.
RANK
2,4
3
1
2SC4134S-E
2SC4134T-E 2SC4134S-TL-E
2SC4134T-TL-E
2SC4134
No.2510-2/9
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Collector Dissipation PC0.8 W
Tc=25°C10W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=100V, IE=0A 100 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 100 nA
DC Current Gain hFE VCE=5V, IC=100mA 100* 400*
Gain-Bandwidth Product fTVCE=10V, IC=100mA 120 MHz
Output Capacitance Cob VCB=10V, f=1MHz 8.5 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=400mA, IB=40mA 0.1 0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=400mA, IB=40mA 0.85 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞100 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V
Turn-ON Time ton See specifi ed Test Circuit. 80 ns
Storage Time tstg 850 ns
Fall Time tf50 ns
* : The 2SC4134 is classifi ed by 100mA hFE as follows :
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SC4134S-E TP 500pcs./bag
Pb Free
2SC4134T-E TP 500pcs./bag
2SC4134S-TL-E TP-FA 700pcs./reel
2SC4134T-TL-E TP-FA 700pcs./reel
VRRL
--5V 50V
IC=10IB1= --10IB2=400mA
++
50Ω
INPUT OUTPU
T
RB
100μF 470μF
PW=20μs
IB1
IB2
DC≤1%
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
2SC4134
No.2510-3/9
1.0
0.8
0.6
0.4
0.2
001 3245
IB=0
ITR03996
2mA
1mA
3mA
5mA
15mA
10mA
30mA
25mA
20mA
500
400
300
200
100
0010 3020 40 50
IB=0
ITR03998
0.5mA
1.0mA
2.0mA
1.5mA
2.5mA
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.2 0.4 0.6 0.8 1.0 1.2
ITR04000
VCE=5V
Ta=75°C
25°C
--25°C
10
2
3
5
7
100
2
3
5
7
1000
72357
0.01 0.1 23 23571.0 ITR04002
VCE=5V
25°C
--25°C
Ta=75°C
ITR04004
3
5
5
3
2
7
7
1.0
10
273572 2357
0.01 0.1 1.0
IC / IB=10
75
°
C
25°C
Ta=--25
°
C
2
7
5
3
2
7
5
3
100
1000
2735 272357
0.01 0.1 1.0
ITR04006
IC / IB=10
25°C
Ta=75°C
--25°C
100
10 0.01 0.1
3
2
2
7
5
3
273527735 1.0
ITR04007
100
10
1.0 10
2
7
5
3
2
7
5
3
2273527735 100
ITR04008
VCE=10V f=1kHz
IC -- VBE
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
fT -- IC
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
2SC4134
No.2510-4/9
1.0
0.1
0.01
7
5
3
2
7
5
7
5
3
2
3
2
1.0 10
57 2 3 57 100
22357 0
12
10
8
6
0.8
4
2
2006040 80 100 140120 160
ITR04010
ITR04009
DC operation Ta=25°C
Tc=25°C
ICP=2.0A
IC=1.0A
100ms
1ms
10ms
No heat sink
A S O
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Dissipation, PC -- W
PC -- Ta
Ambient Temperature, Ta -- °C
Ta=25°C
Single Pulse
2SC4134
No.2510-5/9
Taping Specifi cation
2SC4134S-TL-E, 2SC4134T-TL-E
2SC4134
No.2510-6/9
Outline Drawing Land Pattern Example
2SC4134S-TL-E, 2SC4134T-TL-E
Mass (g) Unit
0.282
* For reference
mm Unit: mm
7.0
1.5
2.3
2.02.5
2.3
7.0
2SC4134
No.2510-7/9
Bag Packing Specifi cation
2SC4134S-E, 2SC4134T-E
2SC4134
No.2510-8/9
Outline Drawing
2SC4134S-E, 2SC4134T-E
Mass (g) Unit
0.315
* For reference
mm
2SC4134
PS No.2510-9/9
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