November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
___________________________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter 2N7000 2N7002 NDS7002A Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1 MΩ)60 V
VGSS Gate-Source Voltage - Continuous ±20 V
- Non Repetitive (tp < 50µs) ±40
IDMaximum Drain Current - Continuous 200 115 280 mA
- Pulsed 500 800 1500
PDMaximum Power Dissipation 400 200 300 mW
Derated above 25oC 3.2 1.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TLMaximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds 300 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
© 1997 Fairchild Semiconductor Corporation
2N7000 (TO-236AB)
2N7002/NDS7002A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Conditions TypeMin Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA All 60 V
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 1µA
TJ=125°C 1mA
VDS = 60 V, VGS = 0 V 2N7002
NDS7002A 1µA
TJ=125°C 0.5 mA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nA
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A -100 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA2N7000 0.8 2.1 3V
VDS = VGS, ID = 250 µA2N7002
NDS7002A 12.1 2.5
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA2N7000 1.2 5Ω
TJ =125°C 1.9 9
VGS = 4.5 V, ID = 75 mA1.8 5.3
VGS = 10 V, ID = 500 mA2N7002 1.2 7.5
TJ =100°C 1.7 13.5
VGS = 5.0 V, ID = 50 mA1.7 7.5
TJ =100C 2.4 13.5
VGS = 10 V, ID = 500 mANDS7002A1.2 2
TJ =125°C 23.5
VGS = 5.0 V, ID = 50 mA1.7 3
TJ =125°C 2.8 5
VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA2N7000 0.6 2.5 V
VGS = 4.5 V, ID = 75 mA0.14 0.4
VGS = 10 V, ID = 500mA2N7002 0.6 3.75
VGS = 5.0 V, ID = 50 mA0.09 1.5
VGS = 10 V, ID = 500mANDS7002A 0.6 1
VGS = 5.0 V, ID = 50 mA0.09 0.15
2N7000.SAM Rev. A1
Electrical Characteristics TA = 25oC unless otherwise noted
Symbol Parameter Conditions TypeMin Typ Max Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mA
VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700
VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700
gFS Forward Transconductance VDS = 10 V, ID = 200 mA2N7000 100 320 mS
VDS > 2 VDS(on), ID = 200 mA2N7002 80 320
VDS > 2 VDS(on), ID = 200 mANDS7002A 80 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz All 20 50 pF
Coss Output Capacitance All 11 25 pF
Crss Reverse Transfer Capacitance All 4 5 pF
ton Turn-On Time VDD = 15 V, RL = 25 Ω,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000 10 ns
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
2N700
NDS7002A 20
toff Turn-Off Time VDD = 15 V, RL = 25 Ω,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000 10 ns
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
2N700
NDS7002A20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 V
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A0.88 1.2
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
2N7000.SAM Rev. A1
012345
0
0.5
1
1.5
2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
V = 10V
GS
DS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 500mA
D
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 1 mA
D
V = V
DS GS
V , NORMALIZED
th
0 0.4 0.8 1.2 1.6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =4.0V
GS
D
R , NORMALIZED
DS(on)
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
-55°C
D
V = 10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
0246810
0
0.4
0.8
1.2
1.6
2
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J 25°C125°C
2N7000 / 2N7002 / NDS7002A
2N7000.SAM Rev. A1
-50 -25 025 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
BV , NORMALIZED
DSS
I = 250µA
D
0.20.40.6 0.81 1.2 1.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
SD
S
25°C
-55°C
0 0.4 0.81.2 1.6 2
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I =500mA
D
V = 25V
DS
115mA
280mA
1 2 3 5 10 20 30 50
1
2
5
10
20
40
60
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, V
out
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature Figure 8. Body Diode Forward Voltage Variation with
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Figure 12. Switching Waveforms
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A
2N7000.SAM Rev. A1
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJA
θJA
θJA
T - T = P * R (t)
θJAA
J
P(pk)
t
1 t
2
0.0001 0.001 0.01 0.1 110 100 300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = (See Datasheet)
θJA
θJA
θJA
T - T = P * R (t)
θJAA
J
P(pk)
t
1 t
2
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
100us
10s
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
10s
100us
1 2 5 10 20 30 60 80
0.005
0.01
0.05
0.1
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
V = 10V
SINGLE PULSE
T = 25°C
GS
A
RDS(ON) Limit
100ms
1ms
10ms
DC
1s
10s
100us
Figure 13. 2N7000 Maximum
Safe Operating Area Figure 14. 2N7002 Maximum
Safe Operating Area
Figure 15. NDS7000A Maximum
Safe Operating Area
Typical Electrical Characteristics (continued)
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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