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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMPQ6700 Quad NPN and PNP General-Purpose Amplifier Description These complementary devices can be used in switches with collector currents of 10 A to 100 mA. These devices are best used when space is the primary consideration. Sourced from process 23 and 66. See 2N3904 (NPN) and 2N3906 (PNP) for characteristics. E1 B1 E2 SOIC-16 Mark: MMPQ6700 B2 E3 B3 E4 pin #1 C1 E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 B4 C2 C1 C3 C2 C4 C4 C3 Figure 1. Device Package Figure 2. Internal Connection Ordering Information Part Number Top Mark Package Packing Method MMPQ6700 MMPQ6700 SOIC 16L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V 200 mA -55 to 150 C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or (c) 1997 Fairchild Semiconductor Corporation MMPQ6700 Rev. 1.5 www.fairchildsemi.com MMPQ6700 -- Quad NPN and PNP General-Purpose Amplifier January 2015 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Total Device Dissipation 1000 mW 8.0 mW/C Effective 4 Dies 125 C/W Each Die 240 C/W Derate Above 25C Thermal Resistance, Junction-to-Ambient Unit Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage(4) IC = 10 mA, IB = 0 40 V BVCBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 V ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 50 nA IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA IC = 10 mA, IB = 1.0 mA 0.25 V hFE VCE(sat) VBE(sat) DC Current Gain(4) Collector-Emitter Saturation Base-Emitter Saturation Voltage(4) Voltage(4) VCE = 1.0 V, IC = 0.1 mA 30 VCE = 1.0 V, IC = 1.0 mA 50 VCE = 1.0 V, IC = 10 mA 70 IC = 10 mA, IB = 1.0 mA 0.9 V Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF Cib Input Capacitance VBE = 0.5 V, f = 100 kHz fT Current Gain Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz PNP 10 NPN 8.0 200 pF MHz Note: 4. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 1997 Fairchild Semiconductor Corporation MMPQ6700 Rev. 1.5 www.fairchildsemi.com 2 MMPQ6700 -- Quad NPN and PNP General-Purpose Amplifier Thermal Characteristics(3) MMPQ6700 -- Quad NPN and PNP General-Purpose Amplifier Physical Dimensions 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45 NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. (R0.10) 0.36 8 0 SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 3. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (c) 1997 Fairchild Semiconductor Corporation MMPQ6700 Rev. 1.5 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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