MJ15023G - ON Semiconductor

February, 2006 − Rev. 10 1Publication Order Number:

MJ15023/D

PNP − MJ15023, MJ15025*

*MJ15025 is a Preferred Device

Silicon Power Transistors

The MJ15023 and MJ15025 are PowerBase power transistors

designed for high power audio, disk head positioners and other linear

applications.

Features

•High Safe Operating Area (100% Tested) −2 A @ 80 V

•High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage MJ15023

MJ15025

VCEO 200

250

Vdc

Collector−Base Voltage MJ15023

MJ15025

VCBO 350

400

Vdc

Emitter−Base Voltage VEBO 5 Vdc

Collector−Emitter Voltage VCEX 400 Vdc

Collector Current − Continuous

− Peak (Note 1) IC16

30 Adc

Base Current − Continuous IB5 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_CPD250

1.43 W

W/_C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +200 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

16 AMPERES

SILICON POWER TRANSISTORS

200 − 250 VOLTS, 250 WATTS

http://onsemi.com

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

MJ15023 TO−204 100 Units / Tray

MJ15023G TO−204

(Pb−Free) 100 Units / Tray

MJ1502xG

AYWW

MEX

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MJ1502x = Device Code

x = 3 or 5

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

MJ15025 TO−204 100 Units / Tray

MJ15025G TO−204

(Pb−Free) 100 Units / Tray

Preferred devices are recommended choices for future use

and best overall value.

PNP − MJ15023, MJ15025*

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0) MJ15023

MJ15025

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

200

250

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15023

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15025

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEX

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

250

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0) MJ15023

(VCE = 200 Vdc, IB = 0) MJ15025

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

500

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VCE = 5 Vdc, IB = 0) Both

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

500

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 0.5 s (non−repetitive))

(VCE = 80 Vdc, t = 0.5 s (non−repetitive))

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

IS/b

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8 Adc, VCE = 4 Vdc)

(IC = 16 Adc, VCE = 4 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.4

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

Cob

ÎÎÎ

−

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

600

ÎÎÎ

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

100

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1 0.2 0.5 10 1 k

TC = 25°C

50 250

0.1

IC, COLLECTOR CURRENT (AMPS)

0.2

1.0

5.0

500100

BONDING WIRE LIMITED

THERMAL LIMITATION

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the powerhandling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 200_C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

PNP − MJ15023, MJ15025*

http://onsemi.com

fT, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product

Figure 4. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.1 0.3 0.5

VCE = 4.0 V

1.0 5.0

2.0 10

4000

0.3

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

TJ = 25°C

10010

500

100

1000

300301.00.5

Figure 5. “On” Voltages

5.0

1.8

0.1

IC, COLLECTOR CURRENT (AMPS)

V, VOLTAGE (VOLTS)

TJ = 25°C

5.0

1.0

0.8

0.2

1.4

2.01.0

VCE(sat) @ IC/IB = 10

0.5

VBE(on) @ VCE = 4.0 V

IC, COLLECTOR CURRENT (AMPS)

200

hFE, DC CURRENT GAIN

100

2.0

5.0

Cob

TJ = 25°C

TJ = 100°C

TJ = 25°C

VCE = 10 V

fTest = 1 MHz

25°C

100°C

3000

0.2 10 205.02.01.00.5

Cib

100°C

TYPICAL CHARACTERISTICS

PNP − MJ15023, MJ15025*

http://onsemi.com

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B−−− 1.050 −−− 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N−−− 0.830 −−− 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T− SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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MJ15023/D

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