© Semiconductor Components Industries, LLC, 2001
April, 2019 Rev. 2
1Publication Order Number:
GBU6M/D
GBU6A - GBU6M
Bridge Rectifiers
Features
GlassPassivated Junction
Surge Overload Rating: 175 A Peak
Reliable LowCost Construction Utilizing Molded Plastic Technique
Ideal for Printed Circuit Board
UL Certified: UL #E258596
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Marking Package
Packing
Method
GBU6A GBU6A GBU 4L Rail
GBU6B GBU6B
GBU6D GBU6D
GBU6G GBU6G
GBU6J GBU6J
GBU6K GBU6K
GBU6M GBU6M
SIP4
CASE 127EL
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MARKING DIAGRAM
RU = UL Marking
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
GBU6A = Specific Device Code
~~ +
RU$Y&Z&3
GBU 6A
GBU6A GBU6M
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2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1)
Symbol Parameter
Value
Units
6A 6B 6D 6G 6J 6K 6M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
VRDC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward
Current
TA = 100°C 6.0 A
IFSM NonRepetitive Peak Forward Surge Current
8.3 ms Single HalfSineWave
175 A
TSTG Storage Temperature Range 55 to +150 °C
TJOperating Junction Temperature 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
THERMAL CHARECTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Value Units
PDPower Dissipation 12 W
RqJA Thermal Resistance per Leg, Junction to Ambient (Note 2) 18.6 °C/W
RqJL Thermal Resistance per Leg, Junction to Lead (Note 3) 3.1 °C/W
2. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm)
3. Device mounted on Al plate with 2.6 × 1.4 × 0.06 inch (6.5 × 3.5 × 0.15 cm)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Units
VFForward Voltage, per Element 6.0 A 1.0 V
IRReverse Current, per Element at Rated VRTA = 25°C 5.0 mA
TA = 125°C 500 mA
I2t I2t Rating for Fusing t < 8.35 ms 127 A2s
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
GBU6A GBU6M
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3
TYPICAL PERFORMANCE CHARACTERISTICS
100
Ambient Temperature (5C)
IF
, Average Rectified Forward
Current (A)
0
150
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Reverse Current vs. Reverse Voltage Figure 4. NonRepetitive Surge Current
Figure 5. Total Capacitance
050
1
2
3
4
5
VF
, Forward Voltage (V)
IF
, Forward Current (A)
IR, Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%) Number of Cycles at 60 Hz
IFSM, Peak Forward Surge
Current (A)
VR, Reverse Voltage (V)
CT
, Total Capacitance (pF)
1
100
0.1
10
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.1
10
0.01
1
0 20 40 60 80 100 120 140
175
110
140
105
70
35
0
2 5 20 50 100
50
400
10
100
1105 50 100
HEATSINK
MOUNTING, TC
4x4x0.15”
COPPER PLATE
MOUNTED ON PC BOARD,
TA 0.5” (12.7 mm) LEAD LENGTH
60 Hz RESISTIVE OR INDUCTIVE LOAD
TA = 25°C
Pulse Width = 300 ms
1% Duty Cycle
TC = 100°C
TC = 25°C
TJ = 105°C
TA = 25°C
f = 1.0 MHz
Visg = 50m Vpp
SIP4 22.05x18.55
CASE 127EL
ISSUE O
DATE 31 DEC 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SIP4 22.05x18.55
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