© 2004 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions
427
DSP 8
Symbol Conditions Maximum Ratings
IFRMS TVJ = TVJM 17 A
IF(AV)M Tcase = 100°C; 180° sine 11 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
t = 8.3 ms (60 Hz), sine 110 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 90 A
t = 8.3 ms (60 Hz), sine 100 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 50 A2s
t = 8.3 ms (60 Hz), sine 50 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 41 A2s
t = 8.3 ms (60 Hz), sine 42 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+150 °C
Md 1) Mounting torque 0.4...0.6 Nm
Weight TO-263/TO-220 2/4 g
VRRM = 800/1200 V
IF(RMS) = 2x17 A
IF(AV)M = 2x11 A
Features
• International standard packages
JEDEC TO-220 AB and TO-263 AA
surface mountable
• For single and three phase bridge
configuration
• Planar passivated chips
• Epoxy meets UL 94V-0 flammability
classification
1) TO-220 only
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Phase-leg
Rectifier Diode
TO-220 AB TO-263 AA
2
(TAB)
1
3
21
3
2
2
(TAB)
1 = Cathode, 2 = Anode/Cathode, 3 = Anode
TAB = Anode/Cathode
VRSM VRRM TO-220 AB TO-263 AA TO-263AB
V V Type
900 800 DSP 8-08A DSP 8-08AS DSP 8-08S
1300 1200 DSP 8-12A DSP 8-12AS DSP 8-12S
Symbol Conditions Characteristic Values
IRTVJ = 25°CV
R= VRRM ≤5µA
VFIF = 7 A; TVJ = 25°C≤1.15 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 40 mΩ
RthJC DC current 3.5 K/W
RthCH 1) DC current (with heatsink compound) typ. 0.5 K/W
aMaximum allowable acceleration 100 m/s2
1 TAB 3
TO-263 AB
TAB
1
3
© 2004 IXYS All rights reserved 2 - 3
IXYS reserves the right to change limits, test conditions and dimensions
427
DSP 8
TO-263 AA Outline
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.38 0.56 0.015 0.022
R 2.29 2.79 0.090 0.110
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.68 .040 .066
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 AB Outline
1.Gate
2.Collector
3.Emitter
4.Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.68 .040 .066
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
© 2004 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions
427
DSP 8
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.252 0.002
2 1.045 0.032
3 1.932 0.227
4 0.271 1.2
0.001 0.01 0.1 1
0
50
100
150
23456789110
101
102
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
0369
0
5
10
15
20
0 30 60 90 120 150 180
0.0001 0.001 0.01 0.1 1 10
0
1
2
3
4
I2t
IFSM
IF
A
VFt
s
t
Ptot
W
Id(AV)M
A
Tamb
t
s
K/W
A2s
0 40 80 120 160
0
3
6
9
12
15
Id(AV)M
TC
A
V
A
C
50 Hz, 80% VRRM
TVJ = 45°C
TVJ = 150°C
TVJ = 150°C
ms
TVJ = 180°C
TVJ = 25°C
VR = 0 V
TVJ = 45°C
C
DSP 8
RthJA:
3 K/W
5 K/W
8 K/W
12 K/W
20 K/W
50 K/W
