IXGH48N60C3C1 - IXYS - Pdf.Support

VCES = 600V

IC110 = 48A

VCE(sat) ≤≤

≤≤

≤ 2.5V

tfi(typ) = 38ns

GenX3TM 600V IGBT

w/ SiC Anti-Parallel

Diode

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (Limited by Leads) 75 A

IC110 TC= 110°C 48 A

IF110 TC= 110°C 20 A

ICM TC= 25°C, 1ms 250 A

IATC= 25°C 30 A

EAS TC= 25°C 300 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 3ΩICM = 100 A

(RBSOA) Clamped Inductive Load @ < VCES

PCTC= 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 Seconds 260 °C

FCMounting Torque 1.13/10 Nm/lb.in

Weight 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V

ICES VCE = VCES, VGE = 0V 50 μA

TJ = 125°C 1.75 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 30A, VGE = 15V, Note 1 2.3 2.5 V

TJ = 125°C 1.8 V

High Speed PT IGBT for

40 - 100kHz Switching

IXGH48N60C3C1

Features

zOptimized for Low Switching Losses

zSquare RBSOA

zAnti-Parallel Schottky Diode

zFast Switching

zAvalanche Rated

zInternational Standard Package

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

Preliminary Technical Information

TO-247

GC

E ( TAB )

G = Gate C = Collector

E = Emitter TAB = Collector

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.

IXGH48N60C3C1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 30A, VCE = 10V, Note 1 20 30 S

Cies 2120 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 420 pF

Cres 50 pF

Qg 77 nC

Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES 16 nC

Qgc 32 nC

td(on) 19 ns

tri 25 ns

Eon 0.33 mJ

td(off) 60 100 ns

tfi 38 ns

Eoff 0.23 0.42 mJ

td(on) 19 ns

tri 28 ns

Eon 0.37 mJ

td(off) 92 ns

tfi 95 ns

Eoff 0.57 mJ

RthJC 0.42 °C/W

RthCS 0.21 °C/W

Inductive Load, TJ = 25°C

IC = 30A, VGE = 15V

VCE = 400V, RG = 3Ω

Note 2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

e

∅ P

Inductive Load, TJ = 125°C

IC = 30A, VGE = 15V

VCE = 400V, RG = 3Ω

Note 2

Reverse Diode (SiC)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF IF = 20A, VGE = 0V, Note 1 1.65 2.10 V

TJ = 125°C 1.80 V

RthJC 0.90 °C/W

Notes

1. Pulse test, t ≤ 300μs, duty c ycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXGH48N60C3C1

Fi g . 1. Ou tp ut C h ar acter i sti cs

@ 25 º C

0

10

20

30

40

50

60

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

Fig. 2. Extended Output Character istics

@ 25 º C

0

50

100

150

200

250

300

0 2 4 6 8 10 12 14 16 18 20

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

7V

11V

9V

Fi g. 3. Outp ut C h aracteristics

@ 125ºC

0

10

20

30

40

50

60

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fi g . 5. C o l l ec to r -to -Emitter Vo l t ag e

vs. Gate- to -Emi tter Vo l ta g e

2.0

2.5

3.0

3.5

4.0

4.5

5.0

7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 60A

30A

15A

T

J

= 25ºC

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

90

100

5.05.56.06.57.07.58.08.59.09.510.0

V

GE

- Volts

I

C

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.

IXGH48N60C3C1

IXYS REF: G_48N60C3C1(5D)6-04-09

Fig . 11. Maximum Transi ent Thermal I mped ance

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

Fig. 7. Tr ansconductance

0

5

10

15

20

25

30

35

40

45

50

0 10 20 30 40 50 60 70 80 90 100 110 120

I

C

- Amperes

g

f s

-

Siemens

TJ = - 40ºC

25ºC

125ºC

Fi g. 10. R everse-B i a s Safe Op erati n g Ar ea

0

10

20

30

40

50

60

70

80

90

100

110

200 250 300 350 400 450 500 550 600 650

V

CE

- Volts

I

C

- Amperes

TJ = 125ºC

RG = 3

dV / dt < 10V / ns

Fi g. 8. Gate C har g e

0

2

4

6

8

10

12

14

16

0 1020304050607080

Q

G

- NanoCoulombs

V

GE

- Volts

VCE = 300V

I C = 30A

I G = 10 mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXGH48N60C3C1

Fig. 12. Inductive Switching

Ener gy L o ss vs . Ga te R esi s tan ce

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0 5 10 15 20 25 30 35

R

G

- Ohms

Eoff - MilliJoules

0.0

0.4

0.8

1.2

1.6

2.0

2.4

Eon - MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

Fig. 17. Inductive Turn-off

Switchi ng Times vs. Junctio n Temp er atur e

20

40

60

80

100

120

140

160

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f i - Nanoseconds

50

60

70

80

90

100

110

120

t

d

(

off

)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

Fig. 15. Inductive Turn-off

Swit chin g Times vs. Gate R esi st an ce

80

90

100

110

120

130

140

0 5 10 15 20 25 30 35

R

G

- Ohms

t

f i

- Nanoseconds

50

100

150

200

250

300

350

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 60A

Fi g . 13 . In d u ct iv e Swi tch i n g

Ener gy L o ss vs . C ol l ec to r C u r r en t

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

Eoff - MilliJoules

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Eon - MilliJoules

E

off

E

on

- - - -

R

G

= 3

 ,

V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching

Energ y L o s s vs. Ju n ct i o n Temperatu re

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

Eoff - MilliJoules

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Eon - MilliJoules

E

off

E

on

- - - -

R

G

= 3

,

V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

Fig. 16. Inductive Turn-off

Switching Times vs. C o l l ector Cu rrent

20

40

60

80

100

120

140

160

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t

f i - Nanoseconds

50

60

70

80

90

100

110

120

t

d

(

off

)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.

IXGH48N60C3C1

IXYS REF: G_48N60C3C1(5D)6-04-09

Fi g . 22. Maximum T r an si en t Ther mal Imped an ce fo r Di o d e

0.00

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 19. Inductive Turn-on

Swit chin g Times vs. C o l l ect or C u r r en t

0

20

40

60

80

100

120

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t

r i

- Nanoseconds

15

17

19

21

23

25

27

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 400V TJ = 25ºC, 125ºC

Fi g . 20. I n d u ct i ve Tur n - on

Swit ch in g Ti mes vs. Jun ct i on Temperatur e

10

20

30

40

50

60

70

80

90

100

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r i

- Nanoseconds

17

18

19

20

21

22

23

24

25

26

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

R

G

= 3

, V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 60A

Fi g . 18. I n d u ct i ve Tur n - on

Switchi ng Ti mes vs. Gate R e si st an ce

0

20

40

60

80

100

120

140

0 5 10 15 20 25 30 35

R

G

- Ohms

t r i

- Nanoseconds

10

20

30

40

50

60

70

80

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

Fig. 21. Forwar d Current vs. Forward Voltage

0

10

20

30

40

50

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

V

F

- Volts

I

F

- Amperes

TJ = 25ºC

TJ = 125ºC