2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 120 V V CEO Collector-emitter Voltage (I R = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 7 V Collector Current 500 mA Total Power Dissipation at T amb 25 C at T cas e 25 C 0.5 1.8 W W - 65 to 200 C IC Pt o t T st g, T j October 1988 Storage and Junction Temperature 1/4 2N720A THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max C/W C/W 97.2 350 ELECTRICAL CHARACTERISTICS(T a mb = 25 C unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit 10 nA Collector Cutoff Current (I E = 0) V CB = 90 V V (B R)CBO Collector-base Breakdown Voltage (I E = 0) I C = 100 A 120 V V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = 30 mA 80 V V (B R)E BO Emitter-base Breakdown Voltage (I E = 0) I E = 100 A 7 V Emitter Cuttoff Current (I E = 0) VE B = 5 V V CE( sat )* Collector-emitter Saturation Voltage I C = 50 mA I C = 150 mA V BE( sat )* Base-emitter Saturation Voltage 10 nA I B = 5 mA I B = 15 mA 1.2 5 V V I C = 50 mA I C = 150 mA I B = 5 mA I B = 15 mA 0.9 1.3 V V DC Current Gain I C = 100 A I C = 10 mA I C = 150 mA V CE = 10 V V CE = 10 V V CE = 10 V 20 35 40 120 - - - High Frequency Current Gain I C = 50 mA f = 20 MHz V CE = 10 V 2.5 C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 15 pF C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V EB = 0.5 V 85 pF I E BO h F E* hfe * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/4 - 2N720A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 3/4 2N720A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4