2N720A
October 1988
HIGH VOLTAGE GENERAL PURPOSE
DESCRIPTION
The 2N720A is a silicon planarepitaxial NPN tran-
sistor in Jedec TO-18 metal case. It is suitable for a
wide variety of amplifier and switchingapplications.
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) 120 V
VCEO Collector–emitter Voltage (IR=0) 80 V
V
EBO Emitter–base Voltage (IC=0) 7 V
ICCollector Current 500 mA
Ptot Total Power Dissipation at Tamb ≤25 °C
at Tcase ≤25 °C0.5
1.8 W
W
Tstg,T
jStorage and Junction Temperature – 65 to 200 °C
TO-18
INTERNAL SCHEMATIC DIAGRAM
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ELECTRICAL CHARACTERISTICS(Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE=0) VCB =90V 10 nA
V
(BR)CBO Collector–base Breakdown
Voltage
(IE=0)
IC=100µA 120 V
V(BR)CEO* Collector–emitter Breakdown
Voltage
(IB=0)
IC=30mA 80 V
V(BR)EBO Emitter–base Breakdown
Voltage
(IE=0)
IE=100µA7 V
I
EBO Emitter Cuttoff Current
(IE=0) VEB =5V 10 nA
V
CE(sat)* Collector–emitter Saturation
Voltage IC=50mA
IC=150mA IB=5mA
IB=15mA 1.2
5V
V
VBE(sat)* Base–emitter Saturation
Voltage IC=50mA
IC=150mA IB=5mA
IB=15mA 0.9
1.3 V
V
hFE* DC Current Gain IC=100µA
IC=10mA
IC=150mA
VCE =10V
V
CE =10V
V
CE =10V
20
35
40 120
–
–
–
hfe High Frequency Current
Gain IC=50mA
f=20MHz V
CE = 10 V 2.5 –
CCBO Collector–base Capacitance IE=0
f = 1 MHz VCB =10V 15 pF
C
EBO Emitter–base Capacitance IC=0
f = 1 MHz VEB = 0.5 V 85 pF
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
THERMAL DATA
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 97.2
350 °C/W
°C/W
2N720A
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o45o
L
G
I
DA
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
2N720A
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor forany infringementof patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents inlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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2N720A
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