[INTERSIL IT130-IT132 Dual Monolithic PNP Transistor FEATURES PIN High hfe at Low Current > 200 @ 10 A CONFIGURATIONS Low Output Capacitance < 2.0 pF 10-71 * IpylBo < 2.5 nA TO-78 Tight VgeE Tracking < 3.0 V/C ABSOLUTE MAXIMUM RATINGS (Note 1) ay @ 25C (unless otherwise noted) Maximum Temperatures. Storage Temperature -65C to +200C Operating Junction Temperature +200C B, || . . eo E, {| 82 || Sz Maximum Power Dissipation % c, 10-78 10-74 8 ONE SIDE BOTH SIDES ONE SIDE BOTH SIDES - Total Dissipat 25C : . : Cate Temperature 0.4 Wott 0.75 Watt 0.3 Watt 0.5 Wait CHIP Derating Factor 23mWPC 43mWPC 1.7mW/PC 2.9mWC TOPOGRAPHY 9250 . . [*~c2z00-*| 4503 Maximum Voltage & Current for Each Transistor 0045 0045 | COLLECTOR #144 F CoLLEcTOR SC CATION 0035 * .0036 Vepo Collector to Base Voltage 45V 0230 22 TyP. 2 PLACES . 0270 0045 , 0045 VcEo Collector to Emitter Voitage 45 Vv | 0a" 0035 aces Vepo Emitter to Base Voltage 7.0V O08 DIAMETER Vv Collector to Collector Voltage 60 V BASE =) EMITTER =2 0040 cco : TYP. 2 PLACES 9030 DIAMETER \q Collector Current 50 mA EMITTER =1 ORDERING INFORMATION TO-79 TO-71 WAFER DICE 1T130A 1T130A-TO71 IT130A/W 1T130A/D (7130 1T130-TO71 1T130/W 1T130/D 1T131 1T131-TO71 IT131/w 1T131/D 17132 1T132-TO71 IT132/W 1T132/D ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) IT130A 1T130 17131 (T7132 PARAMETER Min | MAX | MIN | MAX | MIN [MAX | MIN | MAX UNIT TEST CONDITIONS bre OC Current Gain 200 200 80 80. Io = 10 nA, Voge = 5.0 V Hre OC Current Gain 225 225 100 100 Ig = 1.0 mA, VcgE = 5.0 V hee(-55C} DC Current Gain 75 75 30 30 Ig = 10 uA, VcgE = 5.0 V VeelON) Emitter-Base On Voltage 0.7 0.7 0.7 0.7 | Vv | ic=10pHA, VcE = 5.0V VcE(SAT) Collector Saturation Voltage 05 0.5 0.5 0.5 v ic = 0.5 mA, lp = 0.05 mA tcBo : Collector Cutoff Current -1.0 1.0 -1.0 -1.0 nA lg =0, VcR=45V IcBol+150C) Collector Cutoff Current -10 =10 ~10 . -10 BA Ig = 0, Vog = 45 V lEBO Emitter Cutoff Current -i0 |. -1.0 1.0 -1.0 nA Ic =0, VEg = 5.0V Cob Output Capacitance . 2.0 2.0 2.0 a0 pF te =0,Vcg=5.0V __. Cte Emitter Transition Capacitance 2.5 25 2,6 2.5 pF ic =0, Veg =0.5V Coy-Co Collector to Collector Capacitance 40 4.0 4.0 4.0 pF Veco =9 Ic4-C2 Collector to Collector Leakage Current 10 10 10 10 nA 1 Voc = +60 V VcEQI(SUST) Collector to Emitter Sustaining Voltage | -45 -45 -45 -45 v Ic = 1.0 mA, lg = 0 Current Gain 5 5 4 4 MHz | (c= 104A, VcE=5V GBw Bandwidth Product 110 110 90 90 MHz | ic=1mA.VcE=SV \VBE1-VBEal Base Emitter Voltage Differential 1 2 3 5 mV | Ic = 10 pA, Voce = 5.0 V [Ig y-tegl Base Current Differential 2.5 5 25 26 nA Io = 10 vA, Voge = 5.0 V . Base-Emitter Voltage Differential Ta = -55C to +125C \A(VBEy VBEQ!I Change with Temperature 3 5 10 | 20 [eve lo = 10nA, Voce =5.0V "NOTES: {1} These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (2) The lowest of two hr readings is taken as hfe, for purposes of this ratio. 1-21