© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8 1Publication Order Number:
MMBFJ309LT1/D
MMBFJ309L, MMBFJ310L,
SMMBFJ309L, SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
Features
•Drain and Source are Interchangeable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 25 Vdc
Gate−Source Voltage VGS 25 Vdc
Gate Current IG10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
SOT−23 (TO−236)
CASE 318
STYLE 10
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBFJ309LT1G,
SMMBFJ309LT1G SOT−23
(Pb−Free) 3,000 / Tape &
Reel
12
3
MMBFJ310LT1G,
SMMBFJ310LT1G SOT−23
(Pb−Free) 3,000 / Tape &
Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
6x M G
G
6x = Device Code
x = U for MMBFJ309L, SMMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
SMMBFJ310LT3G SOT−23
(Pb−Free) 10,000 / Tape &
Reel
www.onsemi.com
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0) V(BR)GSS −25 − − Vdc
Gate Reverse Current (VGS = −15 Vdc)
Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) IGSS −
−−
−−1.0
−1.0 nAdc
mAdc
Gate Source Cutoff Voltage MMBFJ309
(VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ310, SMMBFJ310 VGS(off) −1.0
−2.0 −
−−4.0
−6.5 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current MMBFJ309
(VDS = 10 Vdc, VGS = 0) MMBFJ310, SMMBFJ310 IDSS 12
24 −
−30
60 mAdc
Gate−Source Forward Voltage
(IG = 1.0 mAdc, VDS = 0) VGS(f) − − 1.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 − 18 mmhos
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| − − 250 mmhos
Input Capacitance
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − − 5.0 pF
Reverse Transfer Capacitance
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − − 2.5 pF
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en− 10 − nVńHz
Ǹ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
www.onsemi.com
3
70
60
50
40
30
20
, SATURATION DRAIN CURRENT (mA)
-5.0 -4.0 -3.0 -2.0 -1.0 0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS
10
0
70
60
50
40
30
20
10
, DRAIN CURRENT (mA)ID
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
VDS = 10 V
IDSS
+25°C
TA = -55°C
+25°C
+25°C
-55°C
+150°C
+150°C
ID, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
1.0 k
100
10
1.0
0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
, FORWARD TRANSCONDUCTANCE ( mhos)Yfs μ
, OUTPUT ADMITTANCE ( mhos)Y
os μ
VGS(off) = -2.3 V =
VGS(off) = -5.7 V =
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Yfs Yfs
Yos
VGS, GATE SOURCE VOLTAGE (VOLTS)
5.0 4.0 3.0 2.0 1.0 06.07.08.09.010
CAPACITANCE (pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
0
, ON RESISTANCE (OHMS)RDS
RDS
Cgs
Cgd
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
www.onsemi.com
4
|Y11|, |Y21|, |Y22 | (mmhos)
Y12 (mmhos)
30
24
18
12
6.0
01000100 200 300 500 700
f, FREQUENCY (MHz)
3.0
2.4
1.8
1.2
0.6
|S21|, |S11|
0.45
0.39
0.33
0.27
0.21
0.15
0.85
0.79
0.73
0.67
0.61
0.55
|S12|, |S22|
0.060
0.048
0.036
0.024
0.012
1.00
0.98
0.96
0.94
0.92
0.90
1000100 200 300 500 700
f, FREQUENCY (MHz)
Figure 4. Common−Gate Y Parameter
Magnitude versus Frequency Figure 5. Common−Gate S Parameter
Magnitude versus Frequency
VDS = 10 V
ID = 10 mA
TA = 25°CY11
Y21
Y22
Y12
S22
S21
S11
S12
VDS = 10 V
ID = 10 mA
TA = 25°C
f, FREQUENCY (MHz)
q21, q11
50°
40°
30°
20°
10°
0°
180°
170°
160°
150°
140°
130°
q12, q22
-20°
-40°
-80°
-120°
-160°
-200°
-20°
-60°
-100°
-140°
-180°
87°
86°
85°
84°
83°
82°
1000100 200 300 500 700
Figure 6. Common−Gate Y Parameter
Phase−Angle versus Frequency
f, FREQUENCY (MHz)
q11, q12
120°
100°
80°
60°
40°
20°
-20°
-40°
-60°
-80°
-100°
-120°
q21, q22
0
-40°
-80°
-20°
-60°
-100°
1000100 200 300 500 700
Figure 7. S Parameter Phase−Angle
versus Frequency
q22
q21
q12
q11 VDS = 10 V
ID = 10 mA
TA = 25°C
q11
q21 q22
q21
q11
q12
VDS = 10 V
ID = 10 mA
TA = 25°C
MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
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