BSM 50 GB 170 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 27 Ohm Type VCE IC BSM 50 GB 170 DN2 1700V 72A Package Ordering Code HALF-BRIDGE 1 C67070-A2701-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 72 TC = 80 C 50 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 144 TC = 80 C 100 Ptot Power dissipation per IGBT TC = 25 C W 500 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.25 Diode thermal resistance, chip case RthJCD 0.75 Insulation test voltage, t = 1min. Vis Creepage distance + 150 C -55 ... + 150 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Jul-31-1996 BSM 50 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 4 mA V 4.8 5.5 6.2 VGE = 15 V, IC = 50 A, Tj = 25 C - 3.4 3.9 VGE = 15 V, IC = 50 A, Tj = 125 C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1700 V, VGE = 0 V, Tj = 25 C - 0.4 0.5 VCE = 1700 V, VGE = 0 V, Tj = 125 C - 1.6 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 320 AC Characteristics Transconductance gfs VCE = 20 V, IC = 50 A Input capacitance 18 nF - 8 - - 0.64 - - 0.25 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-31-1996 BSM 50 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27 Rise time - 350 700 - 150 300 - 650 1000 - 90 140 tr VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27 Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 50 A RGoff = 27 Fall time tf VCC = 1200 V, VGE = -15 V, IC = 50 A RGoff = 27 Free-Wheel Diode Diode forward voltage VF V IF = 50 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 50 A, VGE = 0 V, Tj = 125 C - 2.1 - Reverse recovery time trr s IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/s, Tj = 125 C Reverse recovery charge - 0.3 - Qrr C IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/s Tj = 25 C - 4 - Tj = 125 C - 12 - Semiconductor Group 3 Jul-31-1996 BSM 50 GB 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 550 W Ptot A tp = 1.6s 450 IC 10 2 400 10 s 350 300 10 1 100 s 250 1 ms 200 150 10 ms 10 0 100 DC 50 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 90 A K/W IC ZthJC 70 10 -1 60 50 D = 0.50 40 0.20 10 30 -2 0.10 0.05 0.02 20 single pulse 0.01 10 0 0 20 40 60 80 100 120 C 160 TC Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-31-1996 BSM 50 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C IC 100 100 A A 80 70 17V 15V 13V 11V 9V 7V IC 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 0 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-31-1996 BSM 50 GB 170 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 50 A C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 14 10 1 800 V 12 Ciss 1200 V 10 8 10 0 6 Coss 4 2 Crss 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 C -1 0.9 0 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 250 500 Semiconductor Group 750 1000 1250 1500 V 2000 VCE 6 0 250 500 750 1000 1250 1500 V 2000 VCE Jul-31-1996 BSM 50 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 27 par.: VCE = 1200 V, VGE = 15 V, IC = 50 A 10 4 10 4 ns ns t t tdoff 10 3 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 20 40 60 80 A 10 1 0 120 20 40 60 80 IC 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 27 par.: VCE = 1200 V, VGE = 15 V, IC = 50 A 120 120 mWs mWs 100 100 E E 90 90 80 80 Eon 70 70 60 60 50 50 40 40 30 30 Eoff 20 20 10 10 0 0 20 40 60 80 A 120 IC Semiconductor Group Eon 7 0 0 Eoff 20 40 60 80 120 RG Jul-31-1996 BSM 50 GB 170 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 100 A IF Diode Tj=125C 80 K/W Tj=25C ZthJC 10 -1 70 60 10 -2 50 D = 0.50 0.20 40 0.10 30 10 -3 0.05 single pulse 0.02 20 0.01 10 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 V VF 3.5 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Jul-31-1996 BSM 50 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g Semiconductor Group 9 Jul-31-1996