Si4920DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET VDS (V) 30 rDS(on) () ID (A) 0.025 @ VGS = 10 V 6.9 0.035 @ VGS = 4.5 V 5.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current (10 s Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID Unit V 6.9 5.5 IDM 40 IS 1.7 A 2 PD W 1.3 TJ, Tstg -55 to 150 C Symbol Limit Unit RthJA 62.5 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70667 S-56945--Rev. C, 23-Nov-98 www.vishay.com FaxBack 408-970-5600 2-1 Si4920DY Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 A 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS Typ Max Unit Static Gate Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55C 25 VDS w 5 V, VGS = 10 V 20 nA A A VGS = 10 V, ID = 6.9 A 0.020 0.025 VGS = 4.5 V, ID = 5.8 A 0.026 0.035 25 Forward Transconductancea gfs VDS = 15 V, ID = 6.9 A Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V Gate Charge Qg VDS = 15 V, VGS = 5V, ID = 6.9 A Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.5 Turn-On Delay Time td(on) 12 20 tr 10 20 60 90 15 30 50 90 S 1.2 V Dynamicb Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 15 23 30 50 nC C VDS = 15 V, V, ID = 6.9 V VGS = 10 V 69A VDD = 15 V V,, RL = 15 ID ^ 1 A, A VGEN = 10 V V, RG = 6 IF = 1.7 A, di/dt = 100 A/s 7.5 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70667 S-56945--Rev. C, 23-Nov-98 Si4920DY Vishay Siliconix Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V 32 30 I D - Drain Current (A) I D - Drain Current (A) 4V 24 16 8 20 TC = 125C 10 25C 3V 0 0.0 -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 VDS - Drain-to-Source Voltage (V) 2 5 Capacitance On-Resistance vs. Drain Current 3000 2500 0.04 Ciss C - Capacitance (pF) r DS(on)- On-Resistance ( ) 4 VGS - Gate-to-Source Voltage (V) 0.05 VGS = 4.5 V 0.03 0.02 VGS = 10 V 2000 1500 1000 Coss 0.01 500 0 Crss 0 0 10 20 30 40 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 10 1.6 VDS = 15 V ID = 6.9 A VGS = 10 V ID = 6.9 A 8 r DS(on)- On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) 3 6 4 2 0 0 5 10 15 20 Qg - Total Gate Charge (nC) Document Number: 70667 S-56945--Rev. C, 23-Nov-98 25 30 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4920DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 40 0.10 30 r DS(on)- On-Resistance ( ) I S - Source Current (A) 20 10 TJ = 150C TJ = 25C 1 0 0.08 0.06 0.04 ID = 6.9 A 0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 30 0.2 25 Single Pulse Power TC = 25C Single Pulse ID = 250 A -0.0 20 Power (W) V GS(th) Variance (V) 2 -0.2 -0.4 15 10 -0.6 5 -0.8 -1.0 -50 -25 0 25 50 75 100 125 0 0.01 150 0.10 TJ - Temperature (C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70667 S-56945--Rev. C, 23-Nov-98