Si4920DY
Vishay Siliconix
Document Number: 70667
S-56945—Rev. C, 23-Nov-98 www.vishay.com FaxBack 408-970-5600
2-1
Dual N-Channel 30-V (D-S) MOSFET
VDS (V) rDS(on) () ID (A)
30
0.025 @ VGS = 10 V 6.9
30
0.035 @ VGS = 4.5 V 5.8
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D1D1
G1
S1
N-Channel MOSFET
D2D2
G2
S2
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source V oltage VGS 20
V
Continuous Drain Current (TJ
=
150
C)
aTA = 25C
ID
6.9
A
Continuous
Drain
Current
(T
J =
150C)a
TA = 70C
I
D5.5
A
Pulsed Drain Current (10 s Pulse Width) IDM 40
A
Continuous Source Current (Diode Conduction)aIS1.7
Maximum Power Dissipation
aTA = 25C
PD
2
W
Maximum
Power
Dissipationa
TA = 70C
P
D1.3
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C
Parameter Symbol Limit Unit
Maximum Junction-to-AmbientaRthJA 62.5 C/W
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
Si4920DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2 Document Number: 70667
S-56945—Rev. C, 23-Nov-98
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V 1
A
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = 30 V, VGS = 0 V, TJ = 55C 25
A
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V20 A
Drain
-
Source On
-
State Resistance
a
rDS(on)
VGS = 10 V, ID = 6.9 A 0.020 0.025
Drain
-
Source
On
-
State
Resistancea
r
DS(on) VGS = 4.5 V, ID = 5.8 A 0.026 0.035
Forward T ransconductance agfs VDS = 15 V, ID = 6.9 A 25 S
Diode Forward V oltage aVSD IS = 1.7 A, VGS = 0 V 1.2 V
Dynamicb
Gate Charge QgVDS = 15 V, VGS = 5V, ID = 6.9 A 15 23
C
Total Gate Charge Qgt
V15VV10VI69A
30 50
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 6.9 A 7.5
nC
Gate-Drain Charge Qgd 3.5
T urn-On Delay Time td(on)
V15VR15
12 20
Rise T ime trVDD = 15 V, RL = 15
I 1 A V 10 V R 6
10 20
T urn-Off Delay T ime td(off)
DD ,L
ID^ 1 A, VGEN = 10 V, RG = 6 60 90 ns
Fall T ime tf15 30
Source-Drain Reverse Recovery T ime trr IF = 1.7 A, di/dt = 100 A/s 50 90
Notes
a. Pulse test; pulse width v300 s, duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Si4920DY
Vishay Siliconix
Document Number: 70667
S-56945—Rev. C, 23-Nov-98 www.vishay.com FaxBack 408-970-5600
2-3
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
0
10
20
30
40
012345
0.6
0.8
1.0
1.2
1.4
1.6
–50 –25 0 25 50 75 100 125 150
0
8
16
24
32
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
0 5 10 15 20 25 30
0
0.01
0.02
0.03
0.04
0.05
0 10203040
Output Characteristics T ransfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)I D
VGS = 10 thru 5 V
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)I D
TC = 125C
–55C
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 15 V
ID = 6.9 A
– On-Resistance (rDS(on) )
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 6.9 A
TJ – Junction Temperature (C)
(Normalized)
– On-Resistance (rDS(on) )
VGS = 10 V
VGS = 4.5 V
3 V 25C
4 V
Si4920DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4 Document Number: 70667
S-56945—Rev. C, 23-Nov-98
0
5
10
15
20
25
30
0.01 0.10 1.00 10.00
1
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Power (W)
–1.0
–0.8
–0.6
–0.4
–0.2
–0.0
0.2
0.4
–50 –25 0 25 50 75 100 125 150
0
0.02
0.04
0.06
0.08
0.10
0246810
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square W ave Pulse Duration (sec)
2
1
0.1
0.0110–4 10–3 10–2 10–1 1
Normalized Effective T ransient
Thermal Impedance
30
– On-Resistance (rDS(on) )
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)I S
TJ – Temperature (C) T ime (sec)
Variance (V)VGS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
ID = 6.9 A
10
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 62.5C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
ID = 250 A
30
20
40
TJ = 150C
TJ = 25C
TC = 25C
Single Pulse
