www.vishay.com Document Number: 91288
2S11-1054-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -40
°C/W
Maximum Junction-to-Case (Drain) RthJC -0.75
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.57 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 6.6 Ab- - 0.55
Forward Transconductance gfs VDS = 50 V, ID = 6.6 Ab6.0 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
- 1426 -
pF
Output Capacitance Coss - 208 -
Reverse Transfer Capacitance Crss -9.6-
Output Capacitance Coss VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz - 1954 -
VDS = 400 V, f = 1.0 MHz - 53 -
Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc- 110 -
Total Gate Charge Qg
VGS = 10 V ID = 11 A, VDS = 400 V
see fig. 6 and 13b
--51
nC
Gate-Source Charge Qgs --12
Gate-Drain Charge Qgd --
23
Turn-On Delay Time td(on)
VDD = 250 V, ID = 11 A
RG = 9.1 , RD = 22 , see fig. 10b
-14-
ns
Rise Time tr -34-
Turn-Off Delay Time td(off) -32-
Fall Time tf -27-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--11
A
Pulsed Diode Forward CurrentaISM --44
Body Diode Voltage VSD TJ = 25 °C, IS = 11 A, VGS = 0 Vb--1.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb- 530 790 ns
Body Diode Reverse Recovery Charge Qrr -3.45.1μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G