Sep.1998
Dimensions Inches Millimeters
A 3.82 97.0
B 3.15 80.0
C 0.69 17.5
D 1.14 29.0
E 1.04 26.5
F 1.89 48.0
G 0.63 16.0
H 0.24 6.0
J 0.26 6.7
Dimensions Inches Millimeters
K 1.14 29.0
L 1.42 36.0
M 0.28 7.0
N 0.26 Dia. Dia. 6.5
P M4 Metric M4
Q M6 Metric M6
R 0.51 13.0
S 0.35 9.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
one IGBT in a single configura-
tion, with a reverse connected su-
per-fast recovery free-wheel di-
ode. All components and intercon-
nects are isolated from the heat
sinking baseplate, offering simpli-
fied system assembly and thermal
management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diodes
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uUPS
uForklift
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM450HA-5F is a 250V (VCES),
450 Ampere Single IGBT Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 450 5
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
LABEL
A
B
DE
FG
H
J
KL
M
(2 TYP.)
E
G
E
C
N - DIA.
(2 TYP.)
Q - THD.
C
G
E
E
R
R
S
P - THD.
(2 TYP.)
C
+1.0
–0.5
+1.0
–0.5
Sep.1998
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM450HA-5F Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 250 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 25°C) IC450 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 900* Amperes
Emitter Current** (TC = 25°C) IE450 Amperes
Peak Emitter Current** IEM 900* Amperes
Maximum Collector Dissipation (TC = 25°C) Pc735 Watts
Mounting Torque, M6 Main Terminal — 1.96 ~ 2.94 N · m
Mounting Torque, M6 Mounting — 1.96 ~ 2.94 N · m
Mounting Torque, M4 Terminal — 0.98 ~ 1.47 N · m
Weight — 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 45mA, VCE = 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 450A, VGE = 10V, — 1.2 1.7** Volts
IC = 450A, VGE = 10V, Tj = 150°C — 1.1 — Volts
Total Gate Charge QGVCC = 100V, IC = 450A, VGE = 10V — 1760 — nC
Emitter-Collector Voltage VEC IE = 450A, VGE = 0V — — 2.0 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies — — 132 nF
Output Capacitance Coes VGE = 0V, VCE = 10V — — 6 nF
Reverse T ransfer Capacitance Cres — — 4.5 nF
Resistive T urn-on Delay T ime td(on) — — 1200 ns
Load Rise T ime trVCC = 100V, IC = 450A, — — 2700 ns
Switching Turn-of f Delay T ime td(off) VGE1 = VGE2 = 10V, RG = 5.6Ω, — — 900 ns
Times Fall T ime tfResistive Load — — 500 ns
Diode Reverse Recovery Time trr IE = 450A, diE/dt = -900A/µs — — 300 ns
Diode Reverse Recovery Charge Qrr IE = 450A, diE/dt = -900A/µs — 7.6 — µC
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT — — 0.17 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per Free Wheel Diode — — 0.23 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied — — 0.090 °C/W
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
012345
400
0
VGE = 15V 10
85.5
5.25
5.0
Tj = 25oC
200
600
1000
800
6
5.75
4.5 4.75
400
0
200
600
1000
800
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0246810
V
CE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0 400 600 1000800200
2.0
1.5
1.0
0.5
0
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 5 10 15
4
3
2
1
0
Tj = 25°C
IC = 180A
IC = 900A
IC = 450A
0.6 0.8 1.0 1.2 1.4 1.6 1.8
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
104
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10-1 100102
100
101
102
103VGE = 0V
101
Cies
Coes
Cres
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102103
101
102
104
td(off)
td(on)
tr
VCC = 100V
VGE = ±10V
RG = 5.6Ω
Tj = 125°C
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102103
102
101
trr
Irr
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
di/dt = -900A/µsec
Tj = 25°C
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
0123
20
15
10
5
045
V
CC = 100V
VCC = 50V
IC = 450A
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-1
10
-2
10
0
10
1
10
-3
10
0
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.17°C/W
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-1
10
0
10
1
10
-3
10
-2
10
0
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.23°C/W
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
