1SS226
1
Switching Diodes Silicon Epitaxial Planar
1SS226
Start of commercial production
1982-09
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact our sales.
3. Packaging and Internal Circuit
S-Mini
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
2021-04-09
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation
1SS226
2
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
PD
IFSM
Tj
Tstg
Note
(Note 1)
(Note 1)
(Note 2)
(Note 1), (Note 3)
Rating
85
80
300
100
200
2
150
-55 to 150
Unit
V
mA
mW
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 0.8 mm2 × 3)
Note 3: Pulse width 10 ms
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
See Fig. 5.1.
Min
Typ.
0.60
0.72
0.90
0.9
1.6
Max
1.20
0.1
0.5
3.0
4.0
Unit
V
µA
pF
ns
Fig. 5.1 Reverse recovery time (trr) Test circuit
2021-04-09
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation
1SS226
3
6. Marking
Fig. 6.1 Marking
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 S-Mini (Unit: mm)
2021-04-09
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation
1SS226
4
8. Characteristics Curves (Note)
Fig. 8.1 IF - VFFig. 8.2 IR - VR
Fig. 8.3 Ct - VRFig. 8.4 PD - Ta
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2021-04-09
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation
1SS226
5
Package Dimensions
Unit: mm
Weight: 12 mg (typ.)
Package Name(s)
TOSHIBA: 2-3F1S
Nickname: S-Mini
2021-04-09
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation
1SS226
6
https://toshiba.semicon-storage.com/
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2021-04-09
Rev.5.0
©2017-2021
Toshiba Electronic Devices & Storage Corporation
