SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995 ✪
FEATURES
*High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPES BCV27 BCV28
BCV47 BCV48
PARTMARKING DETAILS BCV27 ZFF
BCV47 ZFG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCV27 BCV47 UNIT
Collector-Base Voltage VCBO 40 80 V
Collector-Emitter Voltage VCEO 30 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 800 mA
Continuous Collector Current IC500 mA
Base Current IB100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL BCV27 BCV47 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 40 80 V IC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30 60 V IC
=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10 10 V IE=10µA
Collector Cut-Off
Current
ICBO 100
10
100
10
nA
nA
µA
µA
VCB = 30V
VCB = 60V
VCB=30V,Tamb
=150oC
VCB=60V,Tamb
=150oC
Emitter Base
Cut-Off Current
IEBO 100 100 nA VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 1.0 1.0 V IC
=100mA,IB
=0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.5 1.5 V IC
=100mA,IB
=0.1mA*
Static Forward Current
Transfer Ratio
hFE 4K
10K
20K
4K
2K
4K
10K
2K
IC
=100µA, VCE=1V
IC
=10mA, VCE
=5V*
IC
=100mA, VCE
=5V*
IC
=500mA, VCE
=5V*
Transition Frequency fT170 Typical 170 Typical MHz IC
=50mA, VCE
=5V
f = 20MHz
Output Capacitance Cobo 3.5 Typical 3.5 Typical pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Periodic Sample Test Only. For typical graphs see FMMT38A datasheet
BCV27
BCV47
C
B
E
SOT23
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