LITE-ON SEMICONDUCTOR MBRF2030CT thru 2045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ITO-220AB M B D A C K PIN 1 2 3 E G I MECHANICAL DATA H N H L Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.7 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) PIN 1 PIN 2 PIN 3 DIM. MIN. MAX. A B C 15.50 10.0 3.00 16.50 10.40 3.50 D E 9.00 9.30 2.90 F 13.46 3.60 14.22 1.70 1.15 2.40 2.70 I 0.75 1.00 J 0.45 0.70 K 3.00 3.30 L 4.36 4.77 M 2.48 2.80 2.50 2.80 N All Dimensions in millimeter G H J F Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) Peak Forward Surge Current 8.3ms single half sine-wave SYMBOL MBRF2030CT VRRM VRMS VDC 30 21 30 MBRF2040CT 40 28 40 MBRF2045CT UNIT 45 31.5 45 V V V TC =120 C I(AV) 20 A @TJ =25 C IFSM 150 A dv/dt 10000 0.57 0.84 0.72 0.1 15 V/us CJ 580 pF R0JC 2.0 C/W TJ TSTG -55 to +150 C -55 to +175 C Vdis 2000 V Voltage Rate of Change (Rated VR) IF=10A @ TJ =25 C Maximum Forward IF=10A @ TJ =125 C Voltage (Note 1) IF=20A @ TJ =25 C IF=20A @ TJ =125 C @TJ =25 C Maximum DC Reverse Current @TJ =100 C at Rated DC Blocking Voltage Typical Junction Capacitance per element (Note 2) Typical Thermal Resistance (Note 3, 4) Operating Temperature Range Storage Temperature Range Dielectric Strengh from terminals to case, AC with t=1 minute, RH<30% VF IR NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. 4. Device mounted on 135 mm x 135 mm x 8 mm Al Plate. V mA REV. 1, Aug-2007, KTHC49 RATING AND CHARACTERISTIC CURVES MBRF2030CT thru MBRF2045CT 15 10 5 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 20 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave 0 1 175 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 25 C 1 40 60 80 100 120 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 100 10 1 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(uA) TJ = 100 C 1000 20 100 100 TJ = 125 C 0 50 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 10000 10 20 10 NUMBER OF CYCLES AT 60Hz 10 REVERSE VOLTAGE , VOLTS 100 1.0