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Vishay Siliconix
Si2323DS_RC
Document Number: 73620
Revision 22-Aug-05
www.vishay.com
1
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to Ambient Case
RT1 65.0615 N/A
RT2 47.9253 N/A
RT3 41.1729 N/A
RT4 9.6980 N/A
Thermal Capacitance (Joules/°C)
Junction to Ambient Case
CT1 1.1655 N/A
CT2 17.3479 m N/A
CT3 3.0586 m N/A
CT4 582.7750 µN/A