BUK9875-100A,115 - NXP Semiconductors

BUK9875-100A

N-channel TrenchMOS logic level FET

Rev. 02 — 31 May 2010 Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for logic level gate drive

sources

1.3 Applications

12 V, 24 V and 42 V loads

Automotive and general purpose

power switching

Motors, lamps and soleno ids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source

voltage Tj≥25 °C; Tj≤150 °C - - 100 V

IDdrain current VGS =5V; T

sp =25°C;

see Figure 1; see Figure 3 --7A

Ptot total power

dissipation Tsp =25°C; see Figure 2 --8W

Static characteristics

RDSon drain-source

on-state

resistance

VGS =4.5V; I

D=8A;

Tj=25°C --84mΩ

VGS =10V; I

D=8A; T

j= 25 °C - 62 72 mΩ

VGS =5V; I

D=8A; T

j=25°C;

see Figure 12; see Figure 13 - 6475mΩ

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID=7A; V

sup ≤100 V;

RGS =50Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--49mJ

Product data sheet Rev. 02 — 31 May 2010 2 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

2. Pinning information

3. Ordering information

4. Marking

[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

SOT223 (SC-73)

2 D drain

3Ssource

4 D drain

132

mbb076

Table 3. Ordering information

Type n umber Package

Name Description Version

BUK9875-1 00A SC-73 plastic surface-mounted package with increased heatsink; 4

leads SOT223

Table 4. Marking codes

Type n umber Marking code[1]

BUK9875-100A 987510A

Product data sheet Rev. 02 — 31 May 2010 3 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - - 100 V

VDGR drain-gate voltage RGS =20kΩ- - 100 V

VGS gate-source voltage -10 - 10 V

IDdrain current Tsp =25°C; V

GS = 5 V; see Figure 1;

see Figure 3 --7A

Tsp = 100 °C; VGS =5V; see Figure 1 --4A

IDM peak drain current Tsp =25°C; t

p≤10 µs; pulsed;

see Figure 3 --28A

Ptot total power dissipation Tsp =25°C; see Figure 2 --8W

Tstg storage temperature -55 - 150 °C

Tjjunction temperature -55 - 150 °C

VGSM peak gate-source

voltage pulsed; tp≤50 µs -15 - 15 V

Source-drain diode

ISsource current Tsp =25°C --7A

ISM peak source current tp≤10 µs; pulsed; Tsp =25°C --28A

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID=7A; V

sup ≤100 V; RGS =50Ω;

VGS =5V; T

j(init) = 25 °C; unclamped --49mJ

Fig 1. Normalized continuous drain current as a

function of solder point temperature

Fig 2. Normalized total power dissipation as a

function of solder point temperature

Tsp (°C)

0 20015050 100

03aa25

120

Ider

(%)

Tsp (°C)

0 20015050 100

03aa17

120

Pder

(%)

Product data sheet Rev. 02 — 31 May 2010 4 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

6. Thermal characteristics

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03nc17

10−2

10−1

102

10−1 1 10 102 103

VDS (V)

(A)

D.C. 100 ms

10 ms

RDSon = VDS / ID

1 ms

tp = 10 μs

100 μs

δ =

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance

from junction to solder

point

--15K/W

Rth(j-a) thermal resistance

from junction to

ambient

see Figure 4 -70-K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

03nc16

Single Shot

0.2

0.1

0.05

0.02

10−2

10−1

102

10−610−510−410−310−210−1 1 10 102

tp (s)

Zth(j-sp)

(K/W)

δ = 0.5

δ =

Product data sheet Rev. 02 — 31 May 2010 5 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=0.25mA; V

GS =0V; T

j= 25 °C 100 - - V

ID=0.25mA; V

GS =0V; T

j= -55 °C 89 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS =V

GS; Tj=25°C;

see Figure 11 11.52V

ID=1mA; V

DS =V

GS; Tj=-55°C;

see Figure 11 --2.3V

ID=1mA; V

DS =V

GS; Tj= 150 °C;

see Figure 11 0.6--V

IDSS drain leakage current VDS =100V; V

GS =0V; T

j= 25 °C - 0.05 10 µA

VDS =100V; V

GS =0V; T

j= 150 °C - - 500 µA

IGSS gate leakage current VDS =0V; V

GS =10V; T

j= 25 °C - 2 100 nA

VDS =0V; V

GS =-10V; T

j= 25 °C - 2 100 nA

RDSon drain-source on-state

resistance VGS =5V; I

D=8A; T

j=150°C;

see Figure 12 ; see Figure 13 - - 162 mΩ

VGS =4.5V; I

D=8A; T

j=25°C --84mΩ

VGS =10V; I

D=8A; T

j= 25 °C - 62 72 mΩ

VGS =5V; I

D=8A; T

j=25°C;

see Figure 12 ; see Figure 13 - 6475mΩ

Dynamic characteristics

Ciss input capacitance VGS =0V; V

DS =25V; f=1MHz;

Tj=25°C; see Figure 14 - 1270 1690 pF

Coss output capacitance - 140 167 pF

Crss reverse transfer

capacitance - 90 124 pF

td(on) turn-on delay time VDS =30V; R

L=1.2Ω; VGS =5V;

RG(ext) =10Ω; Tj=25°C -13-ns

trrise time - 120 - ns

td(off) tur n-off delay time - 58 - ns

tffall time - 57 - ns

Source-drain diode

VSD source-drain voltage IS=5A; V

GS =0V; T

j=25°C;

see Figure 15 - 0.85 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/µs;

VGS =-10V; V

DS =30V; T

j=25°C -63-ns

Qrrecovered charge - 220 - nC

Product data sheet Rev. 02 — 31 May 2010 6 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of gate-source; typical values

Fig 7. Forward transconductance as a function of

drain current; typical values

Fig 8. Sub-threshold drain current as a function of

gate-source voltage

03na76

0246810

VDS (V)

(A)

2.8

3.0

5.0

VGS (V) = 10

3.2

2.2

3.6

3.8

2.4

2.6

4.0

3.4

03na74

345678910

VGS (V)

RDSon

(mΩ)

03na75

ID (A)

0 10 20 30 40 50 60

gfs

(S)

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0123

VGS (V)

(A)

maxtypmin

Product data sheet Rev. 02 — 31 May 2010 7 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 10. Gate-source voltage as a function of turn-on

gate charge; typical values

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

03nc20

01234

VGS (V)

(A)

Tj = 150 °C

Tj = 25 °C

03na73

0 10 20 30

QG (nC)

VGS

(V)

VDD = 14 V

VDD = 80 V

03aa33

0.5

1.5

2.5

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

max

typ

min

03na77

100

120

140

160

0 10 20 30 40

ID (A)

RDSon

(mΩ)

3.2

3.4

3.6 3.8

4.0

5.0

VGS (V) = 3.0

Product data sheet Rev. 02 — 31 May 2010 8 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

03nc25

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

2.8

−60 −20 20 60 100 140 180

Tj (°C)

03na78

500

1000

1500

2000

2500

3000

10−210−1 1 10 102

VDS (V)

(pF) Ciss

Coss

Crss

03nc21

0.0 0.3 0.6 0.9 1.2 1.5

VSD (V)

(A)

Tj = 150 °C

Tj = 25 °C

Product data sheet Rev. 02 — 31 May 2010 9 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

8. Package outline

Fig 16. Package outline SOT223 (SC-73)

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-10

06-03-16

detail X

vMA

0 2 4 mm

scale

132

Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Product data sheet Rev. 02 — 31 May 2010 10 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

9. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK9875-100A v.2 20100531 Product data sheet - BUK9875-100A-01

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BUK9875-100A-01

(9397 750 07735) 20010130 Product specification - -

Product data sheet Rev. 02 — 31 May 2010 11 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product stat us of device(s) described in this document may have changed since this document was published and may diffe r in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in th e

Product data sheet.

10.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. The pro duct is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipmen t,

nor in applications where failure or malf unction of an NXP Semiconductors

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. NXP Semiconductors accepts no

liability for inclusion and/or use of NXP Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third party

customer(s) (herei nafter both referred to as “A pplication”). It is customer’s

sole responsibility to check whether the NXP Semicondu ctors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and t he

product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defin ed in the

Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This docume nt contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 02 — 31 May 2010 12 of 13

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

Export control — This document as well as the item(s) described herein may

be subject to export control regulat i ons. Export might require a prior

authorization fro m national authorities.

10.4 Trademarks

Notice: All referenced brand s, product names, service names and trademarks

are the property of their respecti ve owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BUK9875-100A

N-channel TrenchMOS logic level FET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 31 May 2010

Document identifier: BUK9875-100A

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2

11 Contact information. . . . . . . . . . . . . . . . . . . . . .12