© 2011 IXYS All rights reserved 1 - 6
20110307a
MIXA 80R1200VA
IXYS reserves the right to change limits, test conditions and dimensions.
Boost / Brake Module
XPT IGBT
Features:
• Isolation voltage 3600 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• Improved temperature
& power cycling
Application:
• Power Factor Correction
• Boost Converter
• Brake Unit
Package:
• DCB ceramic base plate
• Easy to mount with 2 screws
• Space and weight savings
• UL pending E 72873
Part name (Marking on product)
MIXA80R1200VA
6/7 1/2
4/5
9
10
VCES = 1200 V
IC25 = 120 A
VCE(sat) = 2.2 V
12
45
67
910
Preliminary data
© 2011 IXYS All rights reserved 2 - 6
20110307a
MIXA 80R1200VA
IXYS reserves the right to change limits, test conditions and dimensions.
Boost/Brake IGBT
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
120
84
A
A
Ptot total power dissipation TC = 25°C 390 W
VCE(sat) collector emitter saturation voltage IC = 77 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.9
2.2
2.2 V
V
VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.03 0.2
0.6
mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 75 A
VGE = ±15 V; RG = 10 W
70
40
250
100
6.8
8.3
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 10 W;
TVJ = 125°C
VCEK = 1200 V 225 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 10 W; non-repetitive 300
10 µs
A
RthJC thermal resistance junction to case 0.32 K/W
TC = 25°C unless otherwise stated
Boost/Brake Diode
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
135
90
A
A
VFforward voltage IF = 100 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
2.0
2.1
2.3
2.4
V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = -1600 A/µs TVJ = 125°C
IF = 100 A
12.5
100
350
4
µC
A
ns
mJ
RthJC thermal resistance junction to case 0.4 K/W
© 2011 IXYS All rights reserved 3 - 6
20110307a
MIXA 80R1200VA
IXYS reserves the right to change limits, test conditions and dimensions.
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz t = 1 min.
t = 1 s
3000
3600
V~
V~
Mdmounting torque (M5) 2 2.5 Nm
aallowable acceleration 50 m/s2
RthCH thermal resistance case to heatsink 0.3 K/W
Weight 35 g
TC = 25°C unless otherwise stated
© 2011 IXYS All rights reserved 4 - 6
20110307a
MIXA 80R1200VA
IXYS reserves the right to change limits, test conditions and dimensions.
XXX XX-XXXXX yywwA
Marking on product
Date Code
Logo
Production Index
Part number
M = Module
I = IGBT
XA = XPT standard
80 = Current Rating [A]
R = Boost/Brake Chopper
1200 = Reverse Voltage [V]
VA = V1-A-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA80R1200VA MIXA80R1200VA Box 10 510585
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
38
1
2
4
5
7
9
10
6
7
14
50
35
5,5
23,5
25,75
51,5
5,5
15
63
13
17
38,6
4x45°
R
R2
R1
±0,3
±0,2
±0,1
±0,15
0,5
R
0,25
±0,25
±0,3
±0,3
7±0,3
14 ±0,3
11 ±0,3±0,3
11
26
31,6
2
3,3 ±0,5
Product Marking
© 2011 IXYS All rights reserved 5 - 6
20110307a
MIXA 80R1200VA
IXYS reserves the right to change limits, test conditions and dimensions.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
20
40
60
80
100
120
140
VCE [V]
IC
[A]
QG [nC]
VGE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300
0
5
10
15
20
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
13 V
8 10 12 14 16 18 20 22 24
5
6
7
8
9
10
E
[mJ]
Eoff
Fig. 1 Typ. output characteristics
VCE [V]
IC
[A]
VGE = 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
IC
[A]
Fig. 3 Typ. tranfer characteristics
VGE [V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
Eon
Fig. 6 Typ. switching energy vs. gate resistance
RG [Ω]
E
[mJ]
IC [A]
Eon
Eoff
IC = 75 A
VCE = 600 V
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
IC = 75 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
VGE = 15 V
TVJ = 125°C
IGBT
© 2011 IXYS All rights reserved 6 - 6
20110307a
MIXA 80R1200VA
IXYS reserves the right to change limits, test conditions and dimensions.
Diode
1000 1200 1400 1600 1800 2000 2200
4
8
12
16
20
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VR = 600 V
50 A
100 A
200 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
1000 1200 1400 1600 1800 2000 2200
40
60
80
100
120
140
160
I
RM
[A]
di
F
/dt [A/µs]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
1000 1200 1400 1600 1800 2000 2200
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
200 A
50 A
100 A
TVJ = 125°C
VR = 600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
1000 1200 1400 1600 1800 2000 2200
0
2
4
6
8
E
rec
[mJ]
di
F
/dt [A/µs]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
0.001 0.01 0.1 1 10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
IGBT FRD
RitiRiti
1 0.072 0.002 0.092 0.002
2 0.037 0.03 0.067 0.03
3 0.156 0.03 0.155 0.03
4 0.055 0.08 0.086 0.08
