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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C48A
IC90 TC= 90°C24A
ICM TC= 25 °C, 1 ms 9 6 A
SSOA VGE= 15 V, TJ = 125°C, RG = 10 W ICM = 48 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES
tSC VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms
(SCSOA) RG = 82 W, non repetitive
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
GCE
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 6 0 0 V
VGE(th) IC= 1.5 mA, VCE = VGE 3.5 6.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V IXSH 24N60 2 .2 V
IXSH 24N60A 2.7 V
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT with guaranteed
Short Circuit SOA capability
• 2nd generation HDMOSTM process
• Low VCE(sat)
- for low on-state conduction losses
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
VCES IC25 VCE(sat)
IXSH 24N60 600 V 48 A 2.2 V
IXSH 24N60A 600 V 48 A 2.7 V
Short Circuit SOA Capability
92809H(11/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
HiPerFASTTM IGBT
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 9 13 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on) VGE = 15 V, VCE = 10 V 65 A
Cies 1800 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 60 p F
Cres 45 pF
Qg75 90 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 20 30 nC
Qgc 35 50 nC
td(on) 100 ns
tri 200 ns
td(off) 450 ns
tfi 24N60 500 ns
24N60A 275 ns
Eoff 24N60A 2.0 mJ
td(on) 100 ns
tri 200 ns
Eon 1.2 mJ
td(off) 475 ns
tfi 24N60 600 ns
24N60A 450 ns
Eoff 24N60 4 mJ
24N60A 3 mJ
RthJC 0.83 K/W
RthCK 0.25 K/W
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 10 W
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 10 W
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXSH 24N60
IXSH 24N60A
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
