DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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FEATURES
■10µs Short Circuit Withstand
■High Thermal Cycling Capability
■Non Punch Through Silicon
■Isolated MMC Base with AlN Substrates
APPLICATIONS
■Inverters
■Motor Controllers
■Traction Drives
The Powerline range of modules includes half bridge, dual,
chopper, bi-directional and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM800DCM12-A000 is a 1200V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DCM12-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
VCES 1200V
VCE(sat)* (typ) 2.2V
IC(max) 800A
IC(PK) (max) 1600A
*(measured at the power busbars and not the auxiliary terminals)
DIM800DCM12-A000
IGBT Chopper Module
DS5548-1.2 May 2002
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
(See package details for further information)
3(C1)
5(E
1
)
6(G
1
)
7(C
1
)
1(E1)
4(E2)
2(C2)
DIM800DCM12-A000
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
VGE = 0V
-
Tcase = 85˚C
1ms, Tcase = 110˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Units
V
V
A
A
W
kA2s
kA2s
V
PC
Max.
1200
±20
800
1600
6940
100
225
2500
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value (IGBT arm)
Diode I2t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (Diode arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Max.
18
40
27
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
–40
-
-
-
DIM800DCM12-A000
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 40mA, VGE = VCE
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, , Tcase = 125˚C
DC
tp = 1ms
IF = 800A
IF = 800A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 900V,
I1
t
p
≤ 10µs,
V
CE(max)
= V
CES
– L*. di/dt
I2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. ISC
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)†
IF
IFM
VF†
Cies
LM
RINT
SCData
Units
mA
mA
µA
V
V
V
A
A
V
V
V
V
nF
nH
mΩ
A
A
Max.
1
25
4
6.5
2.6
3.0
800
1600
2.4
2.1
2.4
2.0
-
-
-
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.1
1.8
2.1
1.7
90
20
0.27
5500
4500
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
† Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10
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Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
170
130
250
250
80
9
80
380
30
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 2.7Ω
L ~ 100nH
IF = 800A, VR = 600V,
dIF/dt = 4200A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
160
400
220
120
160
450
60
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 2.7Ω
L ~ 100nH
IF = 800A, VR = 600V,
dIF/dt = 4000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
DIM800DCM12-A000
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
20
40
60
80
100
120
140
160
180
0 200 400 600 800 1000
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
T
c
= 125˚C,
V
ce
= 600V,
R
g
= 2.7Ω
0
50
100
150
200
250
300
350
2 6 10 12
Gate resistance, Rg - (ohms)
Switching energy, Esw - (mJ)
48
Eon
Eoff
Erec
Tc = 125˚C,
Vce = 600V,
IC = 800A
0
200
400
600
800
1000
1200
1400
1600
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25˚C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-emitter voltage, Vce - (V)
Collector current, IC - (A)
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Common emitter
Tcase = 125˚C
V
ce
is measured at power busbars
and not the auxiliary terminals
DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10
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Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
200
400
600
800
1000
1200
1400
1600
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
Arm 3-1: T
j
= 25˚C
Arm 3-1: T
j
= 125˚C
Arm 2-4: T
j
= 25˚C
Arm 2-4: T
j
= 125˚C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 200 400 600 800 1000 1200 1400
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125˚C
V
ge
=15V
R
g
= 2.7Ohms
Module I
C
Chip I
C
0
100
200
300
400
500
600
700
800
900
1000
0 200 400 600 800 1000 1200 1400
Reverse voltage, V
R
- (V)
Reverse current, I
R
- (A)
T
j
= 125˚C
Antiparallel Diode
Freewheel Diode
Fig. 10 Forward bias safe operating area
1
10
100
1000
10000
1 10 100 1000 10000
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
I
C(max)
DC
t
p
= 1 ms
t
p
= 100µs
t
p
= 50µs
T
vj
= 125˚C, T
c
= 85˚C
DIM800DCM12-A000
8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Fig. 15 DC current rating vs case temperature
0
200
100
400
600
800
1000
1200
1300
300
500
700
900
1100
1400
1500
0 20 40 60 80 100 120 140 160
Case temperature, T
case
- (˚C)
DC collector current, I
C
- (A)
Fig. 13 Transient thermal impedance
1
10
100
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Diode
Transistor
Freewheel Diode
1
0.4391
0.045
1.5612
0.0063516
1.0725
0.006892
R
i
(˚C/KW)
τ
i
(ms)
R
i
(˚C/KW)
τ
i
(ms)
R
i
(˚C/KW)
τ
i
(ms)
IGBT
Antiparallel Diode
Freewheel Diode
2
3.1937
2.8869
5.7426
1.4746
3.8669
1.5269
3
4.1465
21.7141
6.999
13.9664
5.0773
15.5035
4
10.2356
152.6381
25.6068
111.7517
16.9243
118.8266
DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1050g
Module outine type code: D
DIM800DCM12-A000
10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5548-1 Issue No.1.2 May 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
