SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 MARCH 94 ✪
PARTMARKING DETAIL ZC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 30 V IC
=10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25 V IC
=1mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA
Collector Cut-Off Current ICBO 50 nA VCB=20V
Emitter Cut-Off Current IEBO 50 nA VEB=3V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.3 V IC
=50mA, IB=5mA*
Base-Emitter
SaturationVoltage
VBE(sat) 0.95 V IC=50mA, IB
=5mA*
Static Forward
Current Transfer Ratio
hFE 120
60
360 IC
=2mA, VCE
=1V*
IC
=50mA, VCE
=1V*
Transistion Frequency fT300 MHz IC
=10mA, VCE
=20V, f=100MHz
Output Capacitance Cobo 4pFV
CB=5V, IE=0, f=140KHz
Input Capacitance Cibo 8pFV
BE=0.5V, IE=0, f=140KHz
Noise Figure N 6 dB IC
=200µA, VCE=5V, Rg
=2kΩ
f=30Hz to 15KHz at 3dB points
Small Signal Current
Transfer
hfe 120 480 IC
=2mA, VCE
=1V, f=1KHz
SWITCHING CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL TYP. UNIT CONDITIONS
Delay Time td24 ns VCC
=3V, VBE(off)
=0.5V
IC
=10mA, IB1=1mA
Rise Time tr13 ns
Storage Time ts125 ns VCC
=3V, IC
=10mA
IB1=IB2=1mA
Fall Time tf11 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT4124
C
B
E
